Inventor · disambiguated record
Rajwinder Singh
Also filed as: SINGH RAJWINDER
9 granted patents·3 pending applications·44 citations·filing 2004–2022
83Inventor score
Files withMAXIM INTEGRATED PRODUCTS5KONINKLIJKE PHILIPS NV2INTEL CORP1KONINKL PHILIPS NV1LUMILEDS LLC1
Top patents by PatentIndex Score
12 records- 0189US10573744B1Self-aligned, dual-gate LDMOS transistors and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2018·Granted Feb 25, 2020·6 cites·20 claims
- 0289US7704835B2Method of forming a selective spacer in a semiconductor deviceINTEL CORP·Filed 2006·Granted Apr 27, 2010·15 cites·9 claims
- 0377US7383277B2Modeling the life cycle of individual data objectsSAP AG·Filed 2004·Granted Jun 3, 2008·23 cites·28 claims
- 0467US11699753B2LDMOS transistors including vertical gates with multiple dielectric sections, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2022·Granted Jul 11, 2023·0 cites·14 claims
- 0566US10818821B2Light extraction using feature size and shape control in LED surface rougheningLUMILEDS LLC·Filed 2018·Granted Oct 27, 2020·0 cites·10 claims
- 0661US9559258B2Light extraction using feature size and shape control in LED surface rougheningKONINKLIJKE PHILIPS NV·Filed 2013·Granted Jan 31, 2017·0 cites·4 claims
- 0757US2020243659A1Transistors with dual gate conductors, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2020·Application pending·0 cites
- 0854US10622452B2Transistors with dual gate conductors, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2018·Granted Apr 14, 2020·0 cites·15 claims
- 0954US10121937B2Light extraction using feature size and shape control in LED surface rougheningKONINKLIJKE PHILIPS NV·Filed 2016·Granted Nov 6, 2018·0 cites·5 claims
- 1050US11316044B2LDMOS transistors including vertical gates with multiple dielectric sections, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2018·Granted Apr 26, 2022·0 cites·3 claims
- 1147US2015084058A1Light emitting device grown on a silicon substrateKONINKL PHILIPS NV·Filed 2013·Application pending·0 cites
- 1246US2009085169A1Method of achieving atomically smooth sidewalls in deep trenches, and high aspect ratio silicon structure containing atomically smooth sidewallsRACHMADY WILLY·Filed 2007·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Rajwinder Singh files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →