Inventor · disambiguated record
Raphael Tsu
Also filed as: ESAKI LEO · TSU RAPHAEL
18 granted patents·1,546 citations·filing 1978–2017
95Inventor score
Top patents by PatentIndex Score
18 records- 0198US6376337B1Epitaxial SiOx barrier/insulation layerNANODYNAMICS INC·Filed 1998·Granted Apr 23, 2002·599 cites·14 claims
- 0297US5216262AQuantum well structures useful for semiconductor devicesTSU RAPHAEL·Filed 1992·Granted Jun 1, 1993·356 cites·17 claims
- 0396US7105895B2Epitaxial SiOx barrier/insulation layerNANODYNAMICS INC·Filed 2001·Granted Sep 12, 2006·159 cites·16 claims
- 0494US5895934ANegative differential resistance device based on tunneling through microclusters, and method thereforUS ARMY·Filed 1997·Granted Apr 20, 1999·109 cites·5 claims
- 0589US4569697AMethod of forming photovoltaic quality amorphous alloys by passivating defect statesENERGY CONVERSION DEVICES INC·Filed 1983·Granted Feb 11, 1986·76 cites·33 claims
- 0687US4163238AInfrared semiconductor device with superlattice regionUS ARMY·Filed 1978·Granted Jul 31, 1979·37 cites·13 claims
- 0783US4250515AHeterojunction superlattice with potential well depth greater than half the bandgapUS ARMY·Filed 1978·Granted Feb 10, 1981·26 cites·6 claims
- 0882US5627386ASilicon nanostructure light-emitting diodeUS ARMY·Filed 1995·Granted May 6, 1997·86 cites·5 claims
- 0977US9601579B2Growth of semiconductors on hetero-substrates using graphene as an interfacial layerZHANG YONG·Filed 2014·Granted Mar 21, 2017·3 cites·20 claims
- 1073US5324965ALight emitting diode with electro-chemically etched porous siliconUS ARMY·Filed 1993·Granted Jun 28, 1994·33 cites·11 claims
- 1171US5051786APassivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereofMCNC·Filed 1989·Granted Sep 24, 1991·44 cites·13 claims
- 1270US7023010B2Si/C superlattice useful for semiconductor devicesNANODYNAMICS INC·Filed 2004·Granted Apr 4, 2006·14 cites·55 claims
- 1354US10374037B2Incoherent type-III materials for charge carriers control devicesTSU RAPHAEL·Filed 2014·Granted Aug 6, 2019·0 cites·9 claims
- 1454US9812527B2Growth of semiconductors on hetero-substrates using graphene as an interfacial layerZHANG YONG·Filed 2017·Granted Nov 7, 2017·0 cites·20 claims
- 1548US9000432B2Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)TSU RAPHAEL·Filed 2014·Granted Apr 7, 2015·0 cites·6 claims
- 1645US8846506B2Enhanced electron mobility at the interface between Gd2O3(100)/N-Si(100)TSU RAPHAEL·Filed 2013·Granted Sep 30, 2014·0 cites·14 claims
- 1740US10203526B2Type III hetrojunction—broken gap HJUNIV NORTH CAROLINA CHARLOTTE·Filed 2016·Granted Feb 12, 2019·0 cites·20 claims
- 1838US6239450B1Negative differential resistance device based on tunneling through microclusters, and method thereforUS ARMY·Filed 1999·Granted May 29, 2001·4 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →