Negative differential resistance device based on tunneling through microclusters, and method therefor

Abstract

A solid state electronic device exhibiting negative differential resistances fabricated by depositing a thin layer of amorphous silicon on a single crystal substrate, doped N + . The amorphous silicon is simultaneously crystallized and oxidized in a dry N 2 and O 2 mixture. The result is a layer of amorphous Sio 2 surrounding microclusters of crystalline silicon. A layer of polycrystalline silicon is deposited to a thickness of approximately 0.5 micron. Ohmic metal contacts are made to the top and bottom. These active layers are isolated by insulating SiO 2 . A bias voltage applied between the metal contacts results in negative differential resistance due to tunneling through resonant energy levels in microclusters.

What is claimed is: 
     
       1. A solid state electronic device having negative differential resistance, comprising: a crystal substrate doped N+;   a layer of amorphous silicon dioxide surrounding microclusters of crystalline silicon;   an upper contact means comprising a polycrystalline silicon layer; and,   first and second metal contact means for receiving a bias voltage.   
     
     
       2. The device according to claim 1, wherein said crystal substrate comprises a single crystal substrate. 
     
     
       3. The device according to claim 1, wherein said first and second metal contact means comprise first and second ohmic metal contacts, respectively. 
     
     
       4. The device according to claim 1, further comprising: insulating silicon dioxide means for isolating active layers.   
     
     
       5. The device according to claim 1, wherein said layer of amorphous silicon dioxide has a thickness of approximately 200 Angstroms.