Inventor · disambiguated record
Ran Yan
Also filed as: YAN RAN · YAN RAN RUBY
25 granted patents·12 pending applications·46 citations·filing 2008–2024
93Inventor score
Files withGLOBALFOUNDRIES INC22GLOBAL FOUNDRIES INC2GLOBALFOUNDRIES SG PTE LTD2ARSTAD ERIK1CARROLL MICHAEL ANDREW1
Top patents by PatentIndex Score
37 records- 0194US9324869B1Method of forming a semiconductor device and resulting semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 26, 2016·12 cites·20 claims
- 0288US9466717B1Complex semiconductor devices of the SOI typeGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 11, 2016·6 cites·17 claims
- 0386US9748236B1FinFET device with enlarged channel regionsGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 29, 2017·4 cites·19 claims
- 0480US9614003B1Method of forming a memory device structure and memory device structureGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 4, 2017·5 cites·18 claims
- 0578US9881841B2Methods for fabricating integrated circuits with improved implantation processesGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 30, 2018·2 cites·19 claims
- 0676US9324868B2Epitaxial growth of silicon for FinFETS with non-rectangular cross-sectionsGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 26, 2016·3 cites·13 claims
- 0773US9941348B2Method of forming a capacitor structure and capacitor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 10, 2018·2 cites·20 claims
- 0871US9461145B2OPC enlarged dummy electrode to eliminate ski slope at eSiGeGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 4, 2016·2 cites·10 claims
- 0969US9263270B2Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structureGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 16, 2016·2 cites·20 claims
- 1068US9087716B2Channel semiconductor alloy layer growth adjusted by impurity ion implantationGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 21, 2015·3 cites·24 claims
- 1166US9312189B2Methods for fabricating integrated circuits with improved implantation processesGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 12, 2016·1 cites·15 claims
- 1264US8951877B2Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatmentGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 10, 2015·1 cites·14 claims
- 1362US2024360221A1Engineering method for mesenchymal stem cells based on polyvalent antibody and application thereofUNIV SOUTH CHINA TECH·Filed 2024·Application pending·0 cites
- 1460US9029214B2Integrated circuits and methods for fabricating integrated circuits with improved silicide contactsGLOBALFOUNDRIES INC·Filed 2013·Granted May 12, 2015·1 cites·19 claims
- 1558US9136266B2Gate oxide quality for complex MOSFET devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 15, 2015·1 cites·14 claims
- 1658US2025049992A1Bone tissue regeneration product AND method for repairing bone defectSHANGHAI 9TH PEOPLES HOSPITAL SHANGHAI JIAOTONG UNIV SCHOOL MEDICINE·Filed 2024·Application pending·0 cites
- 1757US10134730B2FinFET device with enlarged channel regionsGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 20, 2018·0 cites·18 claims
- 1857US8999803B2Methods for fabricating integrated circuits with the implantation of fluorineGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Apr 7, 2015·1 cites·9 claims
- 1951US8093405B2Formation of 18F and 19F fluoroarenes bearing reactive functionalitiesCARROLL MICHAEL ANDREW·Filed 2009·Granted Jan 10, 2012·0 cites·14 claims
- 2050US9190516B2Method for a uniform compressive strain layer and device thereofGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 17, 2015·0 cites·14 claims
- 2149US9620589B2Integrated circuits and methods of fabrication thereofGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 11, 2017·0 cites·2 claims
- 2248US9460955B2Integrated circuits with shallow trench isolations, and methods for producing the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 4, 2016·0 cites·18 claims
- 2348US2023263915A1Radiolabeled compoundsKING S COLLEGE LONDON·Filed 2021·Application pending·0 cites
- 2445US8916430B2Methods for fabricating integrated circuits with the implantation of nitrogenGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Dec 23, 2014·0 cites·20 claims
- 2545US2013209361A1Process for producing radiohalogenated bioconjugates and products thereofARSTAD ERIK·Filed 2011·Application pending·0 cites
- 2643US2022296773A1Use of igsf10 in preparation of bone tissue regeneration productSHANGHAI NINTH PEOPLES HOSPITAL SHANGHAI JIAO TONG UNIV SCHOOL OF MEDICINE·Filed 2021·Application pending·0 cites
- 2743US2015187909A1Methods for fabricating multiple-gate integrated circuitsGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 2842US2015162439A1Semiconductor device including a transistor having a low doped drift region and method for the formation thereofGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 2941US10600843B2Memory device structureMARVELL INT LTD·Filed 2017·Granted Mar 24, 2020·0 cites·20 claims
- 3041US8044173B2Asymmetric synthesis of peptidesUNIV READING·Filed 2008·Granted Oct 25, 2011·0 cites·11 claims
- 3141US2014264626A1Method for forming a gate electrode of a semiconductor device, gate electrode structure for a semiconductor device and according semiconductor device structureGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 3241US2014264484A1Fluorine-doped channel silicon-germanium layerSASSIAT NICOLAS·Filed 2013·Application pending·0 cites
- 3341US2014103449A1Oxygen free rta on gate first hkmg stacksHOENTSCHEL JAN·Filed 2012·Application pending·0 cites
- 3441US2015076618A1Integrated circuits with a corrugated gate, and methods for producing the sameGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3539US2014256097A1Methods for forming integrated circuit systems employing fluorine dopingGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3638US9741625B2Method of forming a semiconductor device with STI structures on an SOI substrateGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 22, 2017·0 cites·20 claims
- 3726US8399612B2Asymmetric synthesis of peptidesHARWOOD LAURENCE M·Filed 2011·Granted Mar 19, 2013·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →