Inventor · disambiguated record
Richard J. Brown
Also filed as: BROWN JR RICHARD J · BROWN RICHARD · BROWN RICHARD C · BROWN RICHARD J
69 granted patents·18 pending applications·515 citations·filing 1975–2024
99Inventor score
Top patents by PatentIndex Score
87 records- 0196US8502234B2Monolithically integrated vertical JFET and Schottky diodeKIZILYALLI ISIK C·Filed 2011·Granted Aug 6, 2013·19 cites·6 claims
- 0295US8791034B2Chemical vapor deposition process for aluminum silicon nitrideSHEALY JAMES R·Filed 2010·Granted Jul 29, 2014·32 cites·28 claims
- 0394US11469348B1Beryllium doped GaN-based light emitting diode and methodODYSSEY SEMICONDUCTOR INC·Filed 2020·Granted Oct 11, 2022·3 cites·32 claims
- 0491US8716078B2Method and system for a gallium nitride vertical JFET with self-aligned gate metallizationDISNEY DONALD R·Filed 2012·Granted May 6, 2014·11 cites·26 claims
- 0591US5511643AViscous fluid coupling and improved fluxring for use thereinEATON CORP·Filed 1994·Granted Apr 30, 1996·48 cites·10 claims
- 0690US4828467ASupercharger and rotor and shaft arrangement thereforEATON CORP·Filed 1988·Granted May 9, 1989·38 cites·3 claims
- 0788US11251295B1Vertical field effect transistor device and method of fabricationODYSSEY SEMICONDUCTOR INC·Filed 2020·Granted Feb 15, 2022·2 cites·10 claims
- 0888US8569153B2Method and system for carbon doping control in gallium nitride based devicesBOUR DAVID P·Filed 2011·Granted Oct 29, 2013·7 cites·21 claims
- 0986US8749015B2Method and system for fabricating floating guard rings in GaN materialsDISNEY DONALD R·Filed 2011·Granted Jun 10, 2014·6 cites·11 claims
- 1085US11114587B1Streamlined GaN-based fabrication of light emitting diode structuresODYSSEY SEMICONDUCTOR INC·Filed 2020·Granted Sep 7, 2021·2 cites·12 claims
- 1184US8698164B2Vertical GaN JFET with gate source electrodes on regrown gateDISNEY DONALD R·Filed 2011·Granted Apr 15, 2014·5 cites·20 claims
- 1281US9159784B2Aluminum gallium nitride etch stop layer for gallium nitride based devicesROMANO LINDA·Filed 2011·Granted Oct 13, 2015·4 cites·11 claims
- 1381US8716716B2Method and system for junction termination in GaN materials using conductivity modulationNIE HUI·Filed 2011·Granted May 6, 2014·4 cites·10 claims
- 1480US12062738B2Beryllium doped GaN-based light emitting diode and methodPOWER INTEGRATIONS INC·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 1580US12046699B2Beryllium doped GaN-based light emitting diode and methodPOWER INTEGRATIONS INC·Filed 2022·Granted Jul 23, 2024·0 cites·18 claims
- 1680US9299821B2Gated III-V semiconductor structure and methodSHEALY JAMES R·Filed 2011·Granted Mar 29, 2016·5 cites·24 claims
- 1780US4974712AFluid coupling device and improved valving thereforEATON CORP·Filed 1989·Granted Dec 4, 1990·25 cites·11 claims
- 1880US2024213363A1Vertical field effect transistor device and method of fabricationODYSSEY SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
- 1979US11942537B2Vertical field effect transistor device and method of fabricationODYSSEY SEMICONDUCTOR INC·Filed 2023·Granted Mar 26, 2024·0 cites·20 claims
- 2079US9224828B2Method and system for floating guard rings in gallium nitride materialsEDWARDS ANDREW·Filed 2011·Granted Dec 29, 2015·3 cites·16 claims
- 2179US8969180B2Method and system for junction termination in GaN materials using conductivity modulationAVOGY INC·Filed 2014·Granted Mar 3, 2015·3 cites·15 claims
- 2279US8927999B2Edge termination by ion implantation in GaNKIZILYALLI ISIK C·Filed 2011·Granted Jan 6, 2015·3 cites·18 claims
- 2378US9184305B2Method and system for a GAN vertical JFET utilizing a regrown gateKIZILYALLI ISIK C·Filed 2011·Granted Nov 10, 2015·4 cites·7 claims
- 2478US8969912B2Method and system for a GaN vertical JFET utilizing a regrown channelKIZILYALLI ISIK C·Filed 2011·Granted Mar 3, 2015·4 cites·6 claims
- 2578US8592298B2Fabrication of floating guard rings using selective regrowthROMANO LINDA·Filed 2011·Granted Nov 26, 2013·5 cites·19 claims
- 2677US9306050B2III-V semiconductor structures including aluminum-silicon nitride passivationSHEALY JAMES R·Filed 2010·Granted Apr 5, 2016·4 cites·22 claims
- 2777US8946788B2Method and system for doping control in gallium nitride based devicesKIZILYALLI ISIK C·Filed 2011·Granted Feb 3, 2015·3 cites·6 claims
- 2877US8941117B2Monolithically integrated vertical JFET and Schottky diodeAVOGY INC·Filed 2013·Granted Jan 27, 2015·3 cites·6 claims
- 2977US6056098AViscous fluid coupling and improved valve assembly thereforBORG WARNER AUTOMOTIVE·Filed 1998·Granted May 2, 2000·30 cites·7 claims
- 3076US9136116B2Method and system for formation of P-N junctions in gallium nitride based electronicsBOUR DAVID P·Filed 2011·Granted Sep 15, 2015·3 cites·15 claims
- 3175US8829574B2Method and system for a GaN vertical JFET with self-aligned source and gateDISNEY DONALD R·Filed 2011·Granted Sep 9, 2014·2 cites·6 claims
- 3274US11652165B2Vertical field effect transistor device and method of fabricationODYSSEY SEMICONDUCTOR INC·Filed 2022·Granted May 16, 2023·0 cites·10 claims
- 3373US8841708B2Method and system for a GAN vertical JFET with self-aligned source metallizationDISNEY DONALD R·Filed 2012·Granted Sep 23, 2014·3 cites·7 claims
- 3473US4544054AMounting shaft and adaptor for viscous couplingEATON CORP·Filed 1984·Granted Oct 1, 1985·18 cites·10 claims
- 3572US9991360B2Method for forming III-V semiconductor structures including aluminum-silicon nitride passivationSHEALY JAMES R·Filed 2010·Granted Jun 5, 2018·3 cites·11 claims
- 3672US9093395B2Method and system for local control of defect density in gallium nitride based electronicsBOUR DAVID P·Filed 2011·Granted Jul 28, 2015·2 cites·23 claims
- 3772US5076911ACentrifugation chamber having an interface detection surfaceBAXTER INT·Filed 1991·Granted Dec 31, 1991·147 cites·48 claims
- 3871US9196679B2Schottky diode with buried layer in GaN materialsAVOGY INC·Filed 2015·Granted Nov 24, 2015·1 cites·22 claims
- 3971US8822311B2Method of fabricating a GaN P-i-N diode using implantationKIZILYALLI ISIK C·Filed 2011·Granted Sep 2, 2014·2 cites·19 claims
- 4071US4013154AMounting nut retention for fluid couplingsEATON CORP·Filed 1975·Granted Mar 22, 1977·17 cites·5 claims
- 4170US12512312B1Vertical gallium nitride containing field effect transistor with silicon nitride passivation and gate dielectric regionsPOWER INTEGRATIONS INC·Filed 2022·Granted Dec 30, 2025·0 cites·21 claims
- 4270US8643134B2GaN-based Schottky barrier diode with field plateRAJ MADHAN·Filed 2011·Granted Feb 4, 2014·3 cites·7 claims
- 4367US9318331B2Method and system for diffusion and implantation in gallium nitride based devicesAVOGY INC·Filed 2014·Granted Apr 19, 2016·1 cites·20 claims
- 4467US9171751B2Method and system for fabricating floating guard rings in GaN materialsAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·17 claims
- 4567US8853063B2Method and system for carbon doping control in gallium nitride based devicesAVOGY INC·Filed 2013·Granted Oct 7, 2014·1 cites·15 claims
- 4665US11804574B2Streamlined GaN-based fabrication of light emitting diode structuresODYSSEY SEMICONDUCTOR INC·Filed 2021·Granted Oct 31, 2023·0 cites·10 claims
- 4765US9171900B2Method of fabricating a gallium nitride P-i-N diode using implantationAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·20 claims
- 4865US9171937B2Monolithically integrated vertical JFET and Schottky diodeAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·14 claims
- 4962US5152384AViscous fluid coupling and remote control assembly thereforEATON CORP·Filed 1991·Granted Oct 6, 1992·17 cites·5 claims
- 5059US9330918B2Edge termination by ion implantation in gallium nitrideAVOGY INC·Filed 2014·Granted May 3, 2016·0 cites·12 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →