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AVOGY INC
US43 patents
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US9368582B2Jun 14, 2016
High power gallium nitride electronics using miscut substrates
AVOGY INC22 citations92
US8823140B2Sep 2, 2014
GaN vertical bipolar transistor
AVOGY INC8 citations81
USD762573SAug 2, 2016
Power supply
AVOGY INC5 citations80
US8947154B1Feb 3, 2015
Method and system for operating gallium nitride electronics
AVOGY INC12 citations78
US9196679B2Nov 24, 2015
Schottky diode with buried layer in GaN materials
AVOGY INC1 citations63
US9171900B2Oct 27, 2015
Method of fabricating a gallium nitride P-i-N diode using implantation
AVOGY INC1 citations63
US8969180B2Mar 3, 2015
Method and system for junction termination in GaN materials using conductivity modulation
AVOGY INC3 citations63
US8941117B2Jan 27, 2015
Monolithically integrated vertical JFET and Schottky diode
AVOGY INC3 citations63
US8866148B2Oct 21, 2014
Vertical GaN power device with breakdown voltage control
AVOGY INC3 citations63
US9059199B2Jun 16, 2015
Method and system for a gallium nitride vertical transistor
AVOGY INC3 citations61
US8937317B2Jan 20, 2015
Method and system for co-packaging gallium nitride electronics
AVOGY INC2 citations60
USD728475SMay 5, 2015
Power supply
AVOGY INC3 citations59
US9369059B2Jun 14, 2016
AC-DC converter for wide range output voltage and high switching frequency
AVOGY INC2 citations57
US9502544B2Nov 22, 2016
Method and system for planar regrowth in GaN electronic devices
AVOGY INC0 citations52
US9484470B2Nov 1, 2016
Method of fabricating a GaN P-i-N diode using implantation
AVOGY INC0 citations52
US9391179B2Jul 12, 2016
Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitance
AVOGY INC1 citations52
US9330918B2May 3, 2016
Edge termination by ion implantation in gallium nitride
AVOGY INC0 citations52
US9324844B2Apr 26, 2016
Method and system for a GaN vertical JFET utilizing a regrown channel
AVOGY INC0 citations52
US9318619B2Apr 19, 2016
Vertical gallium nitride JFET with gate and source electrodes on regrown gate
AVOGY INC0 citations52
US9287389B2Mar 15, 2016
Method and system for doping control in gallium nitride based devices
AVOGY INC0 citations52
US9269793B2Feb 23, 2016
Method and system for a gallium nitride self-aligned vertical MESFET
AVOGY INC0 citations52
US9257500B2Feb 9, 2016
Vertical gallium nitride power device with breakdown voltage control
AVOGY INC0 citations52
US9171937B2Oct 27, 2015
Monolithically integrated vertical JFET and Schottky diode
AVOGY INC1 citations52
US9171923B2Oct 27, 2015
Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
AVOGY INC0 citations52
US9171751B2Oct 27, 2015
Method and system for fabricating floating guard rings in GaN materials
AVOGY INC1 citations52
US9123799B2Sep 1, 2015
Gallium nitride field effect transistor with buried field plate protected lateral channel
AVOGY INC1 citations52
US9029210B2May 12, 2015
GaN vertical superjunction device structures and fabrication methods
AVOGY INC0 citations52
US8969926B2Mar 3, 2015
Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitance
AVOGY INC1 citations52
US8946725B2Feb 3, 2015
Vertical gallium nitride JFET with gate and source electrodes on regrown gate
AVOGY INC0 citations52
US8853063B2Oct 7, 2014
Method and system for carbon doping control in gallium nitride based devices
AVOGY INC1 citations52
US9525039B2Dec 20, 2016
Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer
AVOGY INC0 citations51
US9508838B2Nov 29, 2016
InGaN ohmic source contacts for vertical power devices
AVOGY INC0 citations51
US9450112B2Sep 20, 2016
GaN-based Schottky barrier diode with algan surface layer
AVOGY INC0 citations51
US9318331B2Apr 19, 2016
Method and system for diffusion and implantation in gallium nitride based devices
AVOGY INC1 citations51
US9159799B2Oct 13, 2015
Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer
AVOGY INC1 citations51
US9531256B2Dec 27, 2016
AC-DC converter with adjustable output
AVOGY INC0 citations50
US9397186B2Jul 19, 2016
Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back
AVOGY INC0 citations50
US9324809B2Apr 26, 2016
Method and system for interleaved boost converter with co-packaged gallium nitride power devices
AVOGY INC0 citations50
US9324645B2Apr 26, 2016
Method and system for co-packaging vertical gallium nitride power devices
AVOGY INC0 citations50
US9117850B2Aug 25, 2015
Method and system for a gallium nitride vertical JFET with self-aligned source and gate
AVOGY INC0 citations48
US9089083B2Jul 21, 2015
AC-DC converter for wide range output voltage and high switching frequency
AVOGY INC1 citations47
US9324607B2Apr 26, 2016
GaN power device with solderable back metal
AVOGY INC0 citations46
US9472684B2Oct 18, 2016
Lateral GaN JFET with vertical drift region
AVOGY INC0 citations39