Inventor · disambiguated record
Rick Carter
Also filed as: CARTER RICK · CARTER RICK J
7 granted patents·3 pending applications·43 citations·filing 2007–2019
83Inventor score
Top patents by PatentIndex Score
10 records- 0194US9806170B1Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOIGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 31, 2017·12 cites·7 claims
- 0283US8232186B2Methods of integrating reverse eSiGe on NFET and SiGe channel on PFET, and related structureHARLEY ERIC C T·Filed 2008·Granted Jul 31, 2012·13 cites·16 claims
- 0382US10522655B2Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOIGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 31, 2019·3 cites·7 claims
- 0482US10347543B2FDSOI semiconductor device with contact enhancement layer and method of manufacturingGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 9, 2019·4 cites·19 claims
- 0579US8053306B2PFET with tailored dielectric and related methods and integrated circuitIBM·Filed 2007·Granted Nov 8, 2011·8 cites·18 claims
- 0672US8524591B2Maintaining integrity of a high-K gate stack by passivation using an oxygen plasmaBEYER SVEN·Filed 2010·Granted Sep 3, 2013·3 cites·22 claims
- 0762US11217678B2Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOIGLOBALFOUNDRIES US INC·Filed 2019·Granted Jan 4, 2022·0 cites·20 claims
- 0842US2009142891A1Maskless stress memorization technique for cmos devicesIBM·Filed 2007·Application pending·0 cites
- 0942US2012228716A1METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PFET, AND RELATED STRUCTUREHARLEY ERIC C T·Filed 2012·Application pending·0 cites
- 1042US2009152651A1Gate stack structure with oxygen gettering layerIBM·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →