Inventor · disambiguated record
Richard A. Chapman
Also filed as: CHAPMAN RICHARD · CHAPMAN RICHARD A · CHAPMAN RICHARD ALEXANDER
39 granted patents·1,641 citations·filing 1974–2002
98Inventor score
Top patents by PatentIndex Score
39 records- 0195US5079180AMethod of fabricating a raised source/drain transistorTEXAS INSTRUMENTS INC·Filed 1990·Granted Jan 7, 1992·132 cites·16 claims
- 0295US5010032AProcess for making CMOS device with both P+ and N+ gates including refractory metal silicide and nitride interconnectsTEXAS INSTRUMENTS INC·Filed 1989·Granted Apr 23, 1991·107 cites·22 claims
- 0394US4998150ARaised source/drain transistorTEXAS INSTRUMENTS INC·Filed 1988·Granted Mar 5, 1991·104 cites·17 claims
- 0490US4890141ACMOS device with both p+ and n+ gatesTEXAS INSTRUMENTS INC·Filed 1988·Granted Dec 26, 1989·62 cites·41 claims
- 0589US4231149ANarrow band-gap semiconductor CCD imaging device and method of fabricationTEXAS INSTRUMENTS INC·Filed 1978·Granted Nov 4, 1980·70 cites·6 claims
- 0688US4962322ANonvolatible capacitor random access memoryTEXAS INSTRUMENTS INC·Filed 1989·Granted Oct 9, 1990·62 cites·18 claims
- 0788US4845047AThreshold adjustment method for an IGFETTEXAS INSTRUMENTS INC·Filed 1987·Granted Jul 4, 1989·53 cites·6 claims
- 0887US6063677AMethod of forming a MOSFET using a disposable gate and raised source and drainTEXAS INSTRUMENTS INC·Filed 1997·Granted May 16, 2000·91 cites·32 claims
- 0986US6180978B1Disposable gate/replacement gate MOSFETs for sub-0.1 micron gate length and ultra-shallow junctionsTEXAS INSTRUMENTS INC·Filed 1998·Granted Jan 30, 2001·76 cites·8 claims
- 1086US6010929AMethod for forming high voltage and low voltage transistors on the same substrateTEXAS INSTRUMENTS INC·Filed 1997·Granted Jan 4, 2000·64 cites·12 claims
- 1185US4892614AIntegrated circuit isolation processTEXAS INSTRUMENTS INC·Filed 1989·Granted Jan 9, 1990·69 cites·14 claims
- 1284US5976769AIntermediate layer lithographyTEXAS INSTRUMENTS INC·Filed 1996·Granted Nov 2, 1999·73 cites·8 claims
- 1384US5468666AUsing a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chipTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 21, 1995·50 cites·11 claims
- 1483US5595922AProcess for thickening selective gate oxide regionsTEXAS INSTRUMENTS INC·Filed 1994·Granted Jan 21, 1997·55 cites·14 claims
- 1583US5227649ACircuit layout and method for VLSI circuits having local interconnectsTEXAS INSTRUMENTS INC·Filed 1992·Granted Jul 13, 1993·50 cites·2 claims
- 1682US6118161ASelf-aligned trenched-channel lateral-current-flow transistorTEXAS INSTRUMENTS INC·Filed 1998·Granted Sep 12, 2000·43 cites·8 claims
- 1781US6207511B1Self-aligned trenched-channel lateral-current-flow transistorTEXAS INSTRUMENTS INC·Filed 2000·Granted Mar 27, 2001·24 cites·13 claims
- 1880US3980915AMetal-semiconductor diode infrared detector having semi-transparent electrodeTEXAS INSTRUMENTS INC·Filed 1974·Granted Sep 14, 1976·24 cites·19 claims
- 1978US4314275AInfrared time delay with integration CTD imagerTEXAS INSTRUMENTS INC·Filed 1980·Granted Feb 2, 1982·27 cites·12 claims
- 2076US4908327ACounter-doped transistorTEXAS INSTRUMENTS INC·Filed 1988·Granted Mar 13, 1990·34 cites·19 claims
- 2176US4842675AIntegrated circuit isolation processTEXAS INSTRUMENTS INC·Filed 1986·Granted Jun 27, 1989·45 cites·32 claims
- 2275US6127232ADisposable gate/replacement gate MOSFETS for sub-0.1 micron gate length and ultra-shallow junctionsTEXAS INSTRUMENTS INC·Filed 1999·Granted Oct 3, 2000·40 cites·3 claims
- 2370US6348719B1Using a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chipTEXAS INSTRUMENTS INC·Filed 1996·Granted Feb 19, 2002·24 cites·2 claims
- 2470US5389809ASilicided MOS transistorTEXAS INSTRUMENTS INC·Filed 1992·Granted Feb 14, 1995·48 cites·21 claims
- 2564US4435785AUnipolar voltage non-volatile JRAM cellTEXAS INSTRUMENTS INC·Filed 1981·Granted Mar 6, 1984·16 cites·9 claims
- 2663US6376293B1Shallow drain extenders for CMOS transistors using replacement gate designTEXAS INSTRUMENTS INC·Filed 2000·Granted Apr 23, 2002·11 cites·31 claims
- 2763US3989946AArrays for infrared image detectionTEXAS INSTRUMENTS INC·Filed 1975·Granted Nov 2, 1976·20 cites·17 claims
- 2862US5198378AProcess of fabricating elevated source/drain transistorTEXAS INSTRUMENTS INC·Filed 1990·Granted Mar 30, 1993·31 cites·20 claims
- 2962US4029962AArrays for infrared image detectionTEXAS INSTRUMENTS INC·Filed 1975·Granted Jun 14, 1977·24 cites·21 claims
- 3061US5357459ANonvolatile capacitor random access memoryTEXAS INSTRUMENTS INC·Filed 1991·Granted Oct 18, 1994·19 cites·7 claims
- 3160US4360732AInfrared charge transfer device (CTD) systemTEXAS INSTRUMENTS INC·Filed 1980·Granted Nov 23, 1982·19 cites·12 claims
- 3258US4327291AInfrared charge injection device imaging systemTEXAS INSTRUMENTS INC·Filed 1980·Granted Apr 27, 1982·12 cites·13 claims
- 3356US4008950AElectrochromic display cell structureTEXAS INSTRUMENTS INC·Filed 1975·Granted Feb 22, 1977·13 cites·12 claims
- 3453US4459684ANonvolatile JRAM cell using nonvolatile capacitance for information retrievalTEXAS INSTRUMENTS INC·Filed 1981·Granted Jul 10, 1984·11 cites·13 claims
- 3547US6828249B2System and method for enhanced monitoring of an etch processINFINEON TECHNOLOGIES RICHMOND·Filed 2002·Granted Dec 7, 2004·3 cites·13 claims
- 3647US4377904AMethod of fabricating a narrow band-gap semiconductor CCD imaging deviceTEXAS INSTRUMENTS INC·Filed 1980·Granted Mar 29, 1983·14 cites·5 claims
- 3742US5933740ARTP booster to semiconductor device annealTEXAS INSTRUMENTS INC·Filed 1996·Granted Aug 3, 1999·9 cites·14 claims
- 3839US4429330AInfrared matrix using transfer gatesTEXAS INSTRUMENTS INC·Filed 1980·Granted Jan 31, 1984·7 cites·10 claims
- 3939US4402126AMethod for fabrication of a non-volatile JRAM cellTEXAS INSTRUMENTS INC·Filed 1981·Granted Sep 6, 1983·5 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →