Inventor · disambiguated record
Richard Lee Donze
Also filed as: DONZE RICHARD L · DONZE RICHARD LEE
12 granted patents·2 pending applications·326 citations·filing 1999–2007
90Inventor score
Files withIBM14
Top patents by PatentIndex Score
14 records- 0197US7227183B2Polysilicon conductor width measurement for 3-dimensional FETsIBM·Filed 2004·Granted Jun 5, 2007·197 cites·11 claims
- 0294US7183780B2Electrical open/short contact alignment structure for active region vs. gate regionIBM·Filed 2004·Granted Feb 27, 2007·62 cites·3 claims
- 0375US7241649B2FinFET body contact structureIBM·Filed 2004·Granted Jul 10, 2007·18 cites·14 claims
- 0468US7696565B2FinFET body contact structureIBM·Filed 2007·Granted Apr 13, 2010·3 cites·5 claims
- 0560US7317605B2Method and apparatus for improving performance margin in logic pathsIBM·Filed 2004·Granted Jan 8, 2008·11 cites·8 claims
- 0655US6466626B1Driver with in-situ variable compensation for cable attenuationIBM·Filed 1999·Granted Oct 15, 2002·33 cites·13 claims
- 0754US7453272B2Electrical open/short contact alignment structure for active region vs. gate regionIBM·Filed 2006·Granted Nov 18, 2008·0 cites·6 claims
- 0854US7336086B2Measurement of bias of a silicon area using bridging vertices on polysilicon shapes to create an electrical open/short contact structureIBM·Filed 2006·Granted Feb 26, 2008·0 cites·3 claims
- 0953US7935629B2Semiconductor scheme for reduced circuit area in a simplified processIBM·Filed 2007·Granted May 3, 2011·0 cites·3 claims
- 1053US7626220B2Semiconductor scheme for reduced circuit area in a simplified processIBM·Filed 2007·Granted Dec 1, 2009·0 cites·1 claims
- 1152US7659733B2Electrical open/short contact alignment structure for active region vs. gate regionIBM·Filed 2006·Granted Feb 9, 2010·0 cites·3 claims
- 1250US2007128740A1Polysilicon Conductor Width Measurement for 3-Dimensional FETsIBM·Filed 2007·Application pending·0 cites
- 1349US7317217B2Semiconductor scheme for reduced circuit area in a simplified processIBM·Filed 2004·Granted Jan 8, 2008·2 cites·7 claims
- 1435US2006063334A1Fin FET diode structures and methods for buildingIBM·Filed 2004·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Richard Lee Donze files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →