Inventor · disambiguated record
Ritesh Jhaveri
Also filed as: JHAVERI RITESH
14 granted patents·2 pending applications·42 citations·filing 2011–2023
89Inventor score
Top patents by PatentIndex Score
16 records- 0190US9923054B2Fin structure having hard mask etch stop layers underneath gate sidewall spacersINTEL CORP·Filed 2015·Granted Mar 20, 2018·8 cites·8 claims
- 0288US9406547B2Techniques for trench isolation using flowable dielectric materialsINTEL CORP·Filed 2013·Granted Aug 2, 2016·9 cites·14 claims
- 0386US9048260B2Method of forming a semiconductor device with tall fins and using hard mask etch stopsJHAVERI RITESH·Filed 2011·Granted Jun 2, 2015·14 cites·12 claims
- 0485US12131912B2Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structuresINTEL CORP·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 0584US11610889B2Arsenic-doped epitaxial, source/drain regions for NMOSINTEL CORP·Filed 2018·Granted Mar 21, 2023·3 cites·15 claims
- 0682US10147634B2Techniques for trench isolation using flowable dielectric materialsINTEL CORP·Filed 2016·Granted Dec 4, 2018·3 cites·17 claims
- 0781US10204794B2Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structuresINTEL CORP·Filed 2013·Granted Feb 12, 2019·3 cites·19 claims
- 0879US11875999B2Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structuresINTEL CORP·Filed 2022·Granted Jan 16, 2024·0 cites·20 claims
- 0974US11417531B2Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structuresINTEL CORP·Filed 2021·Granted Aug 16, 2022·0 cites·20 claims
- 1073US12094881B2Arsenic-doped epitaxial source/drain regions for NMOSINTEL CORP·Filed 2023·Granted Sep 17, 2024·0 cites·17 claims
- 1173US11101268B2Transistors employing non-selective deposition of source/drain materialINTEL CORP·Filed 2017·Granted Aug 24, 2021·2 cites·18 claims
- 1271US10950453B2Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structuresINTEL CORP·Filed 2020·Granted Mar 16, 2021·0 cites·20 claims
- 1363US10643855B2Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structuresINTEL CORP·Filed 2018·Granted May 5, 2020·0 cites·20 claims
- 1448US11011620B2Techniques for increasing channel region tensile strain in n-MOS devicesINTEL CORP·Filed 2016·Granted May 18, 2021·0 cites·20 claims
- 1534US2020161440A1Metal to source/drain contact area using thin nucleation layer and sacrificial epitaxial filmINTEL CORP·Filed 2017·Application pending·0 cites
- 1634US2018240874A1Resistance reduction under transistor spacersINTEL CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →