Inventor · disambiguated record
Rishabh Mehandru
Also filed as: MEHANDRU RISHABH
134 granted patents·33 pending applications·207 citations·filing 2008–2025
99Inventor score
Top patents by PatentIndex Score
167 records- 0199US11239236B2Forksheet transistor architecturesINTEL CORP·Filed 2020·Granted Feb 1, 2022·9 cites·24 claims
- 0299US11201221B2Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2020·Granted Dec 14, 2021·9 cites·24 claims
- 0398US11658221B2Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2021·Granted May 23, 2023·3 cites·20 claims
- 0498US11616015B2Integrated circuit device with back-side interconnection to deep source/drain semiconductorINTEL CORP·Filed 2020·Granted Mar 28, 2023·3 cites·19 claims
- 0597US10886217B2Integrated circuit device with back-side interconnection to deep source/drain semiconductorINTEL CORP·Filed 2016·Granted Jan 5, 2021·20 cites·20 claims
- 0696US11824107B2Wrap-around contact structures for semiconductor nanowires and nanoribbonsINTEL CORP·Filed 2022·Granted Nov 21, 2023·2 cites·20 claims
- 0796US10872820B2Integrated circuit structuresINTEL CORP·Filed 2017·Granted Dec 22, 2020·22 cites·11 claims
- 0896US10304946B2Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devicesINTEL CORP·Filed 2015·Granted May 28, 2019·11 cites·21 claims
- 0995US12107085B2Interconnect techniques for electrically connecting source/drain regions of stacked transistorsINTEL CORP·Filed 2023·Granted Oct 1, 2024·2 cites·20 claims
- 1094US11664377B2Forksheet transistor architecturesINTEL CORP·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 1193US11139241B2Integrated circuit device with crenellated metal trace layoutINTEL CORP·Filed 2016·Granted Oct 5, 2021·6 cites·13 claims
- 1292US11527612B2Gate-all-around integrated circuit structures having vertically discrete source or drain structuresINTEL CORP·Filed 2018·Granted Dec 13, 2022·6 cites·13 claims
- 1392US11264512B2Thin film transistors having U-shaped featuresINTEL CORP·Filed 2018·Granted Mar 1, 2022·6 cites·20 claims
- 1491US10790281B2Stacked channel structures for MOSFETsINTEL CORP·Filed 2015·Granted Sep 29, 2020·8 cites·25 claims
- 1590US11404319B2Vertically stacked finFETs and shared gate patterningINTEL CORP·Filed 2017·Granted Aug 2, 2022·5 cites·20 claims
- 1690US11367722B2Stacked nanowire transistor structure with different channel geometries for stressINTEL CORP·Filed 2018·Granted Jun 21, 2022·6 cites·22 claims
- 1790US11094716B2Source contact and channel interface to reduce body charging from band-to-band tunnelingINTEL CORP·Filed 2018·Granted Aug 17, 2021·6 cites·20 claims
- 1889US10411090B2Hybrid trigate and nanowire CMOS device architectureINTEL CORP·Filed 2015·Granted Sep 10, 2019·6 cites·13 claims
- 1988US12288810B2Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 2088US11664373B2Isolation walls for vertically stacked transistor structuresINTEL CORP·Filed 2021·Granted May 30, 2023·1 cites·20 claims
- 2188US11282861B2Dynamic logic built with stacked transistors sharing a common gateINTEL CORP·Filed 2015·Granted Mar 22, 2022·5 cites·20 claims
- 2287US11462536B2Integrated circuit structures having asymmetric source and drain structuresINTEL CORP·Filed 2018·Granted Oct 4, 2022·5 cites·17 claims
- 2387US11264500B2Device isolationINTEL CORP·Filed 2017·Granted Mar 1, 2022·4 cites·20 claims
- 2487US10784358B2Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2015·Granted Sep 22, 2020·3 cites·4 claims
- 2586US12288813B2Gate-all-around integrated circuit structures having insulator fin on insulator substrateINTEL CORP·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 2686US11527640B2Wrap-around contact structures for semiconductor nanowires and nanoribbonsINTEL CORP·Filed 2019·Granted Dec 13, 2022·3 cites·23 claims
- 2785US11935933B2Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2023·Granted Mar 19, 2024·0 cites·20 claims
- 2885US11362189B2Stacked self-aligned transistors with single workfunction metalINTEL CORP·Filed 2018·Granted Jun 14, 2022·4 cites·25 claims
- 2985US10453967B2Semiconductor nanowire device having cavity spacer and method of fabricating cavity spacer for semiconductor nanowire deviceINTEL CORP·Filed 2015·Granted Oct 22, 2019·3 cites·18 claims
- 3084US12224326B2Contact architecture for capacitance reduction and satisfactory contact resistanceINTEL CORP·Filed 2023·Granted Feb 11, 2025·0 cites·24 claims
- 3184US11373999B2Deep trench via for three-dimensional integrated circuitINTEL CORP·Filed 2018·Granted Jun 28, 2022·3 cites·26 claims
- 3284US11342432B2Gate-all-around integrated circuit structures having insulator fin on insulator substrateINTEL CORP·Filed 2020·Granted May 24, 2022·1 cites·20 claims
- 3384US2025220952A1Backside contact structures and fabrication for metal on both sides of devicesINTEL CORP·Filed 2025·Application pending·0 cites
- 3483US11742346B2Interconnect techniques for electrically connecting source/drain regions of stacked transistorsINTEL CORP·Filed 2018·Granted Aug 29, 2023·3 cites·24 claims
- 3583US11411119B2Double gated thin film transistorsINTEL CORP·Filed 2018·Granted Aug 9, 2022·3 cites·27 claims
- 3682US2025227959A1Gate-all-around integrated circuit structures having insulator fin on insulator substrateINTEL CORP·Filed 2025·Application pending·0 cites
- 3781US12176429B2Wrap-around contact structures for semiconductor nanowires and nanoribbonsINTEL CORP·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 3881US11573798B2Stacked transistors with different gate lengths in different device strataINTEL CORP·Filed 2019·Granted Feb 7, 2023·1 cites·23 claims
- 3981US11075198B2Stacked transistor architecture having diverse fin geometryINTEL CORP·Filed 2018·Granted Jul 27, 2021·3 cites·20 claims
- 4080US11276780B2Transistor contact area enhancementINTEL CORP·Filed 2018·Granted Mar 15, 2022·2 cites·25 claims
- 4179US11862702B2Gate-all-around integrated circuit structures having insulator FIN on insulator substrateINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 4279US11393818B2Stacked transistors with Si PMOS and high mobility thin film transistor NMOSINTEL CORP·Filed 2018·Granted Jul 19, 2022·2 cites·24 claims
- 4379US10546873B2Integrated circuit with stacked transistor devicesINTEL CORP·Filed 2015·Granted Jan 28, 2020·5 cites·19 claims
- 4479US2024332403A1Stacked transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 4578US12310044B2Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devicesINTEL CORP·Filed 2022·Granted May 20, 2025·0 cites·19 claims
- 4678US12255137B2Sideways vias in isolation areas to contact interior layers in stacked devicesINTEL CORP·Filed 2024·Granted Mar 18, 2025·0 cites·12 claims
- 4778US11387238B2Non-silicon N-Type and P-Type stacked transistors for integrated circuit devicesINTEL CORP·Filed 2018·Granted Jul 12, 2022·2 cites·20 claims
- 4878US10600810B2Backside fin recess control with multi-hsi optionINTEL CORP·Filed 2015·Granted Mar 24, 2020·2 cites·7 claims
- 4977US11824097B2Contact architecture for capacitance reduction and satisfactory contact resistanceINTEL CORP·Filed 2022·Granted Nov 21, 2023·0 cites·20 claims
- 5077US11640961B2III-V source/drain in top NMOS transistors for low temperature stacked transistor contactsINTEL CORP·Filed 2018·Granted May 2, 2023·2 cites·15 claims
Showing the top 50 of 167 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →