Inventor · disambiguated record
Roman Baburske
Also filed as: BABURSKE ROMAN
70 granted patents·11 pending applications·122 citations·filing 2010–2025
98Inventor score
Files withINFINEON TECHNOLOGIES AG76INFINEON TECHNOLOGIES AUSTRIA AG3BABURSKE ROMAN1INFINEON TECHNOLOGIES AUSTRIA1
Top patents by PatentIndex Score
81 records- 0195US9917186B2Semiconductor device with control structure including buried portions and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 13, 2018·9 cites·14 claims
- 0294US11728417B2Semiconductor device including first gate electrode and second gate electrodeINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 15, 2023·2 cites·18 claims
- 0393US9613805B1Method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 4, 2017·9 cites·22 claims
- 0493US9105679B2Semiconductor device and insulated gate bipolar transistor with barrier regionsINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 11, 2015·17 cites·20 claims
- 0592US10332973B2N-channel bipolar power semiconductor device with p-layer in the drift volumeINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 25, 2019·8 cites·20 claims
- 0688US10153275B2Method of operating an IGBT having switchable and non-switchable diode cellsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 11, 2018·4 cites·20 claims
- 0788US9876100B2Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zonesINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jan 23, 2018·4 cites·20 claims
- 0888US9076838B2Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 7, 2015·7 cites·15 claims
- 0986US10978560B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 13, 2021·3 cites·17 claims
- 1086US10475909B2Electric assembly including a bipolar switching device and a wide bandgap transistorINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 12, 2019·5 cites·22 claims
- 1186US9997602B2Semiconductor device with transistor cells and enhancement cells with delayed control signalsINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 12, 2018·4 cites·22 claims
- 1284US10461739B2Transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Oct 29, 2019·4 cites·20 claims
- 1383US11133380B2Diode structure of a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 28, 2021·2 cites·13 claims
- 1482US10886909B2Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 5, 2021·3 cites·28 claims
- 1582US2025081563A1Power Semiconductor Device with dV/dt Controllability and Low Gate ChargeINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1681US9093568B1Semiconductor diodeINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 28, 2015·5 cites·22 claims
- 1780US10200028B2Electric assembly including a reverse conducting switching device and a rectifying deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 5, 2019·3 cites·20 claims
- 1879US10224206B2Bipolar transistor device with an emitter having two types of emitter regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Mar 5, 2019·2 cites·29 claims
- 1979US9536999B2Semiconductor device with control structure including buried portions and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 3, 2017·3 cites·14 claims
- 2077US12199146B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jan 14, 2025·0 cites·17 claims
- 2176US10333387B2Electric assembly including a semiconductor switching device and a clamping diodeINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 25, 2019·2 cites·26 claims
- 2276US9373710B2Insulated gate bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jun 21, 2016·4 cites·17 claims
- 2375US10651165B2Semiconductor device having overload current carrying capabilityINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 12, 2020·2 cites·11 claims
- 2475US10381467B2Semiconductor device with separation regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 13, 2019·1 cites·12 claims
- 2575US9985017B2Semiconductor device comprising a clamping structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted May 29, 2018·2 cites·32 claims
- 2674US9419080B2Semiconductor device with recombination regionINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 16, 2016·3 cites·20 claims
- 2774US9231091B2Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zonesINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 5, 2016·2 cites·18 claims
- 2873US11721689B2Semiconductor device having a semiconductor channel region and a semiconductor auxiliary regionINFINEON TECHNOLOGIES AG·Filed 2022·Granted Aug 8, 2023·0 cites·17 claims
- 2973US8476712B2Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diodeBABURSKE ROMAN·Filed 2010·Granted Jul 2, 2013·4 cites·21 claims
- 3072US12255251B2Semiconductor device including first gate electrode and second gate electrodeINFINEON TECHNOLOGIES AG·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 3172US11682700B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jun 20, 2023·0 cites·13 claims
- 3272US9553179B2Semiconductor device and insulated gate bipolar transistor with barrier structureINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 24, 2017·3 cites·24 claims
- 3371US11848354B2Diode structure of a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 19, 2023·0 cites·13 claims
- 3470US9641168B2Controlling reverse conducting IGBTINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 2, 2017·2 cites·21 claims
- 3566US11410989B2Semiconductor device having overload current carrying capabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Aug 9, 2022·0 cites·11 claims
- 3666US9543389B2Semiconductor device with recombination regionINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jan 10, 2017·1 cites·19 claims
- 3766US9515066B2Semiconductor device having an insulated gate bipolar transistor arrangement and a method for forming such a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Dec 6, 2016·1 cites·21 claims
- 3865US10903344B2Semiconductor device with separation regionsINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 26, 2021·0 cites·21 claims
- 3964US2025253841A1Semiconductor switching module with insulated gate bipolar transistor and unipolar switching deviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 4063US9064923B2Bipolar semiconductor component with a fully depletable channel zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Jun 23, 2015·1 cites·20 claims
- 4162US12323134B2Semiconductor switching module with insulated gate bipolar transistor and unipolar switching deviceINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 4262US2025006729A1RC IGBT and Method of Operating an RC IGBTINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 4362US2025006727A1IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBTINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 4460US10546939B2N-channel bipolar power semiconductor device with P-layer in the drift volumeINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 28, 2020·0 cites·20 claims
- 4560US10217837B2Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structuresINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 26, 2019·0 cites·20 claims
- 4660US2024304709A1Semiconductor device including trench transistor cell unitsINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 4759US9570577B2Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesasINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 14, 2017·0 cites·16 claims
- 4858US10340337B2Diode structure of a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 2, 2019·0 cites·21 claims
- 4957US9837506B2Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structuresINFINEON TECHNOLOGIES AG·Filed 2017·Granted Dec 5, 2017·0 cites·10 claims
- 5055US10825906B2Semiconductor device with transistor cells and enhancement cells with delayed control signalsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 3, 2020·0 cites·21 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →