Inventor · disambiguated record
Roberta Bottini
Also filed as: BOTTINI ROBERTA
11 granted patents·1 pending application·103 citations·filing 1997–2001
89Inventor score
Top patents by PatentIndex Score
12 records- 0173US6221717B1EEPROM memory cell comprising a selection transistor with threshold voltage adjusted by implantation, and related manufacturing processST MICROELECTRONICS SRL·Filed 1999·Granted Apr 24, 2001·31 cites·9 claims
- 0266US6432762B1Memory cell for EEPROM devices, and corresponding fabricating processSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Aug 13, 2002·9 cites·21 claims
- 0366US6268247B1Memory cell of the EEPROM type having its threshold set by implantation, and fabrication methodST MICROELECTRONICS SRL·Filed 1999·Granted Jul 31, 2001·26 cites·20 claims
- 0455US6194270B1Process for the manufacturing of an electrically programmable non-volatile memory deviceST MICROELECTRONICS SRL·Filed 1998·Granted Feb 27, 2001·12 cites·15 claims
- 0549US5985718AProcess for fabricating memory cells with two levels of polysilicon for devices of EEPROM typeSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Nov 16, 1999·12 cites·5 claims
- 0645US6320219B1Memory cell for EEPROM devices and corresponding fabricating processSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Nov 20, 2001·2 cites·5 claims
- 0742US6437395B2Process for the manufacturing of an electrically programmable non-volatile memory deviceST MICROELECTRONICS SRL·Filed 2001·Granted Aug 20, 2002·1 cites·11 claims
- 0840US6548354B2Process for producing a semiconductor memory device comprising mass-storage memory cells and shielded memory cells for storing reserved informationST MICROELECTRONICS SRL·Filed 2001·Granted Apr 15, 2003·1 cites·22 claims
- 0939US2002020872A1Memory cell of the EEPROM type having its threshold adjusted by implantationST MICROELECTRONICS SRL·Filed 2001·Application pending·0 cites
- 1038US6329254B1Memory cell of the EEPROM type having its threshold adjusted by implantation, and fabrication methodST MICROELECTRONICS SRL·Filed 1999·Granted Dec 11, 2001·6 cites·17 claims
- 1133US6097057AMemory cell for EEPROM devices, and corresponding fabricating processSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Aug 1, 2000·2 cites·13 claims
- 1231US6080626AMemory cell for EEPROM devices, and corresponding fabricating processSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Jun 27, 2000·1 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →