Inventor · disambiguated record
Rowland C. Clarke
Also filed as: CLARKE ROWLAND C
16 granted patents·2 pending applications·363 citations·filing 1983–2008
94Inventor score
Files withNORTHROP GRUMMAN CORP11WESTINGHOUSE ELECTRIC CORP4NORTHROP GRUMMAN SYSTEMS CORP2TALVACCHIO JOHN J1
Top patents by PatentIndex Score
18 records- 0187US7982239B2Power switching transistorsNORTHROP GRUMMAN CORP·Filed 2007·Granted Jul 19, 2011·17 cites·10 claims
- 0287US5925895ASilicon carbide power MESFET with surface effect supressive layerNORTHROP GRUMMAN CORP·Filed 1997·Granted Jul 20, 1999·75 cites·7 claims
- 0380US7253083B2Method of thinning a semiconductor structureNORTHROP GRUMMAN CORP·Filed 2005·Granted Aug 7, 2007·10 cites·14 claims
- 0479US5945701AStatic induction transistorNORTHROP GRUMMAN CORP·Filed 1997·Granted Aug 31, 1999·48 cites·8 claims
- 0578US7560322B2Method of making a semiconductor structure for high power semiconductor devicesNORTHROP GRUMMAN SYSTEMS CORP·Filed 2005·Granted Jul 14, 2009·6 cites·8 claims
- 0673US5903020ASilicon carbide static induction transistor structureNORTHROP GRUMMAN CORP·Filed 1997·Granted May 11, 1999·36 cites·14 claims
- 0770US5198695ASemiconductor wafer with circuits bonded to a substrateWESTINGHOUSE ELECTRIC CORP·Filed 1990·Granted Mar 30, 1993·44 cites·12 claims
- 0866US5705830AStatic induction transistorsNORTHROP GRUMMAN CORP·Filed 1996·Granted Jan 6, 1998·27 cites·19 claims
- 0965US5612547ASilicon carbide static induction transistorNORTHROP GRUMMAN CORP·Filed 1995·Granted Mar 18, 1997·26 cites·8 claims
- 1061US7098093B2HEMT device and method of makingNORTHROP GRUMMAN CORP·Filed 2004·Granted Aug 29, 2006·9 cites·7 claims
- 1161US4583107ACastellated gate field effect transistorWESTINGHOUSE ELECTRIC CORP·Filed 1983·Granted Apr 15, 1986·15 cites·15 claims
- 1258US7535039B1Vertically integrated dual gate transistor structure and method of making sameNORTHROP GRUMMAN CORP·Filed 2006·Granted May 19, 2009·2 cites·15 claims
- 1358US7217947B2Semiconductor light source and method of makingNORTHROP GRUMMAN CORP·Filed 2004·Granted May 15, 2007·12 cites·8 claims
- 1456US4544417ATransient capless annealing process for the activation of ion implanted compound semiconductorsWESTINGHOUSE ELECTRIC CORP·Filed 1983·Granted Oct 1, 1985·21 cites·6 claims
- 1542US2009179297A1Junction barrier schottky diode with highly-doped channel region and methodsNORTHROP GRUMMAN SYSTEMS CORP·Filed 2008·Application pending·0 cites
- 1640US5501173AMethod for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substratesWESTINGHOUSE ELECTRIC CORP·Filed 1993·Granted Mar 26, 1996·12 cites·5 claims
- 1733US2007121274A1Small volume thin film and high energy density crystal capacitorsTALVACCHIO JOHN J·Filed 2006·Application pending·0 cites
- 1832US5807773ASelf-aligned gate fabrication process for silicon carbide static induction transistorsNORTHROP GRUMMAN CORP·Filed 1996·Granted Sep 15, 1998·3 cites·36 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →