Inventor · disambiguated record

Romain Esteve

Also filed as: ESTEVE ROMAIN

49 granted patents·9 pending applications·202 citations·filing 2012–2023

97Inventor score

Technology areasH10P H10D H01L H10W

Files withINFINEON TECHNOLOGIES AG50 INFINEON TECHNOLOGIES AUSTRIA AG4 INFINEON TECHNOLOGIES AUSTRIA2 Nexperia BV2

Top patents by PatentIndex Score

58 records

0198US9478655B2Semiconductor device having a lower diode region arranged below a trenchINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 25, 2016·28 cites·30 claims
0297US9837527B2Semiconductor device with a trench electrodeINFINEON TECHNOLOGIES AG·Filed 2015·Granted Dec 5, 2017·22 cites·28 claims
0397US9293558B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Mar 22, 2016·31 cites·10 claims
0496US10332876B2Method of forming compound semiconductor bodyINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jun 25, 2019·16 cites·17 claims
0596US9577073B2Method of forming a silicon-carbide device with a shielded gateINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 21, 2017·19 cites·18 claims
0694US10700192B2Semiconductor device having a source electrode contact trenchINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 30, 2020·7 cites·20 claims
0794US10211306B2Semiconductor device with diode region and trench gate structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 19, 2019·15 cites·21 claims
0894US10074741B2Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode regionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Sep 11, 2018·10 cites·23 claims
0994US9741712B2Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal latticeINFINEON TECHNOLOGIES AG·Filed 2016·Granted Aug 22, 2017·8 cites·21 claims
1093US10586845B1SiC trench transistor device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 10, 2020·9 cites·25 claims
1192US9997515B2Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal latticeINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 12, 2018·6 cites·24 claims
1291US10038087B2Semiconductor device and transistor cell having a diode regionINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 31, 2018·4 cites·20 claims
1390US9818818B2Power semiconductor device including trench gate structures with longitudinal axes tilted to a main crystal directionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 14, 2017·6 cites·15 claims
1487US10727330B2Semiconductor device with diode regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 28, 2020·2 cites·20 claims
1584US9876103B2Semiconductor device and transistor cell having a diode regionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 23, 2018·2 cites·20 claims
1682US9209318B2Vertical JFET with body diode and device regions disposed in a single compound epitaxial layerINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Dec 8, 2015·4 cites·5 claims
1780US10679983B2Method of producing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jun 9, 2020·2 cites·7 claims
1879US10700182B2Semiconductor device with transistor cells and a drift structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 30, 2020·2 cites·26 claims
1978US10217636B2Method of manufacturing a silicon carbide semiconductor device by removing amorphized portionsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 26, 2019·2 cites·17 claims
2073US9960230B2Silicon-carbide transistor device with a shielded gateINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 1, 2018·1 cites·20 claims
2172US9029974B2Semiconductor device, junction field effect transistor and vertical field effect transistorINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 12, 2015·3 cites·17 claims
2271US10985248B2SiC power semiconductor device with integrated Schottky junctionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 20, 2021·1 cites·20 claims
2371US10256097B2Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structureINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 9, 2019·1 cites·15 claims
2469US11462611B2SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 4, 2022·0 cites·15 claims
2568US11626477B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2021·Granted Apr 11, 2023·0 cites·23 claims
2668US10553685B2SiC semiconductor device with offset in trench bottomINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 4, 2020·1 cites·24 claims
2766US10896952B2SiC device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 19, 2021·0 cites·16 claims
2863US11881512B2Method of manufacturing semiconductor device with silicon carbide bodyINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 23, 2024·0 cites·14 claims
2963US11195946B2Method of manufacturing a silicon carbide semiconductor device with trench gate structure and vertical pn junction between body region and drift structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 7, 2021·0 cites·20 claims
3063US2018315845A1Semiconductor Device and Transistor Cell Having a Diode RegionINFINEON TECHNOLOGIES AG·Filed 2018·Application pending·0 cites
3162US11842938B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 12, 2023·0 cites·18 claims
3260US11101343B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
3360US10361192B2Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal latticeINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jul 23, 2019·0 cites·25 claims
3457US11195921B2Semiconductor device with silicon carbide bodyINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 7, 2021·0 cites·16 claims
3557US10964808B2Silicon carbide semiconductor device with trench gate structure and vertical PN junction between body region and drift structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 30, 2021·0 cites·30 claims
3657US10915029B2Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zoneINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 9, 2021·0 cites·20 claims
3756US2018248000A1Vertical Transistor Device with a Variable Gate Dielectric ThicknessINFINEON TECHNOLOGIES AG·Filed 2018·Application pending·0 cites
3855US10734514B2Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode regionINFINEON TECHNOLOGIES AG·Filed 2018·Granted Aug 4, 2020·0 cites·19 claims
3955US9941272B2Method of producing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Apr 10, 2018·0 cites·7 claims
4055US2018053841A1Semiconductor Device with a Source Trench ElectrodeINFINEON TECHNOLOGIES AG·Filed 2017·Application pending·0 cites
4154US2025113592A1Semiconductor device with schottky contactINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
4253US11764063B2Silicon carbide device with compensation region and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 19, 2023·0 cites·22 claims
4353US10120287B2Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zoneINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 6, 2018·0 cites·24 claims
4453US9666696B2Method of manufacturing a vertical junction field effect transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted May 30, 2017·0 cites·12 claims
4552US11552172B2Silicon carbide device with compensation layer and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·0 cites·13 claims
4652US2023238442A1Semiconductor device with metal nitride layer and a method of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
4751US11901407B2Semiconductor device with improved junction termination extension regionNexperia BV·Filed 2021·Granted Feb 13, 2024·0 cites·20 claims
4851US11380756B2Silicon carbide device with Schottky contactINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 5, 2022·0 cites·20 claims
4951US11217500B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 4, 2022·0 cites·26 claims
5050US10580878B1SiC device with buried doped regionINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 3, 2020·0 cites·20 claims

Showing the top 50 of 58 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →