Inventor · disambiguated record
Roda Kanawati
Also filed as: Kanawati Roda
16 granted patents·2 pending applications·30 citations·filing 2016–2023
89Inventor score
Files withNEWPORT FAB LLC14NEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR INC2NEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH1TOWER SEMICONDUCTOR LTD1
Top patents by PatentIndex Score
18 records- 0191US10325833B1Bent polysilicon gate structure for small footprint radio frequency (RF) switchNEWPORT FAB LLC·Filed 2018·Granted Jun 18, 2019·9 cites·20 claims
- 0285US11581215B2Body-source-tied semiconductor-on-insulator (SOI) transistorNEWPORT FAB LLC·Filed 2020·Granted Feb 14, 2023·2 cites·20 claims
- 0385US10044331B2High power RF switches using multiple optimized transistorsNEWPORT FAB LLC·Filed 2016·Granted Aug 7, 2018·4 cites·21 claims
- 0484US10530357B1Dynamic impedance circuit for uniform voltage distribution in a high power switch branchNEWPORT FAB LLC·Filed 2018·Granted Jan 7, 2020·4 cites·19 claims
- 0583US10469121B2Non-linear shunt circuit for third order harmonic reduction in RF switchesNEWPORT FAB LLC·Filed 2017·Granted Nov 5, 2019·5 cites·4 claims
- 0678US10587114B2Bi-directional electrostatic discharge protection device for radio frequency circuitsNEWPORT FAB LLC·Filed 2017·Granted Mar 10, 2020·2 cites·18 claims
- 0776US10686486B1Radio frequency (RF) switch with improved power handlingNEWPORT FAB LLC·Filed 2019·Granted Jun 16, 2020·2 cites·20 claims
- 0872US10587233B2High power RF switches using multiple optimized transistors and methods for fabricating sameNEWPORT FAB LLC·Filed 2018·Granted Mar 10, 2020·1 cites·12 claims
- 0970US11756823B2Method for manufacturing body-source-tied SOI transistorNEWPORT FAB LLC·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 1070US10916585B2Stacked phase-change material (PCM) radio frequency (RF) switches with improved RF power handlingNEWPORT FAB LLC·Filed 2018·Granted Feb 9, 2021·1 cites·24 claims
- 1161US12341337B2Multi voltage-domain electro static discharge (ESD) power clampTOWER SEMICONDUCTOR LTD·Filed 2022·Granted Jun 24, 2025·0 cites·21 claims
- 1254US11955555B2Field effect transistors with reduced leakage currentNEWPORT FAB LLC·Filed 2022·Granted Apr 9, 2024·0 cites·19 claims
- 1353US2025133766A1Radio Frequency (RF) Semiconductor-On-Insulator (SOI) Device with Improved Power HandlingNEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH·Filed 2023·Application pending·0 cites
- 1442US9608079B2Semiconductor device having reduced drain-to-source capacitanceNEWPORT FAB LLC·Filed 2016·Granted Mar 28, 2017·0 cites·20 claims
- 1540US10672885B2Silicide block isolation for reducing off-capacitance of a radio frequency (RF) switchNEWPORT FAB LLC·Filed 2017·Granted Jun 2, 2020·0 cites·8 claims
- 1637US10014366B1Tapered polysilicon gate layout for power handling improvement for radio frequency (RF) switch applicationsNEWPORT FAB LLC·Filed 2017·Granted Jul 3, 2018·0 cites·21 claims
- 1736US10586870B2Wide contact structure for small footprint radio frequency (RF) switchNEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR INC·Filed 2018·Granted Mar 10, 2020·0 cites·20 claims
- 1827US2018269230A1Thin Polysilicon For Lower Off-Capacitance Of A Radio Frequency (RF) Silicon-On-Insulator (SOI) Switch Field Effect Transistor (FET)NEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →