Inventor · disambiguated record
Ronny Kern
Also filed as: KERN RONNY
18 granted patents·5 pending applications·16 citations·filing 2013–2025
89Inventor score
Top patents by PatentIndex Score
23 records- 0194US11715768B2Silicon carbide components and methods for producing silicon carbide componentsINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 1, 2023·2 cites·16 claims
- 0292US11069778B2Silicon carbide components and methods for producing silicon carbide componentsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jul 20, 2021·6 cites·19 claims
- 0389US11211459B2Semiconductor device and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 28, 2021·5 cites·14 claims
- 0483US10615040B2Superjunction structure in a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 7, 2020·3 cites·11 claims
- 0582US12327727B2Chip with a silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 0682US2025266259A1Chip with a silicon carbide substrate and an electrical contactINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0779US12302619B2Silicon carbide components and methods for producing silicon carbide componentsINFINEON TECHNOLOGIES AG·Filed 2023·Granted May 13, 2025·0 cites·16 claims
- 0872US11798807B2Process for producing an electrical contact on a silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 24, 2023·0 cites·14 claims
- 0965US11990520B2Method of manufacturing a semiconductor device having frame structures laterally surrounding backside metal structuresINFINEON TECHNOLOGIES AG·Filed 2021·Granted May 21, 2024·0 cites·21 claims
- 1065US2022293558A1Method for forming semiconductor devices using a glass structure attached to a wide band-gap semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 1162US11043383B2Electrical contact connection on silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 22, 2021·0 cites·12 claims
- 1259US10431698B2Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitrideINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Oct 1, 2019·0 cites·20 claims
- 1356US10763151B2Wafer carrier, method for manufacturing the same and method for carrying a waferINFINEON TECHNOLOGIES AG·Filed 2018·Granted Sep 1, 2020·0 cites·18 claims
- 1456US10199514B2Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 5, 2019·0 cites·19 claims
- 1553US11393784B2Semiconductor package devices and method for forming semiconductor package devicesINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 19, 2022·0 cites·20 claims
- 1652US11139375B2Semiconductor device and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Oct 5, 2021·0 cites·20 claims
- 1749US9029250B2Method for producing semiconductor regions including impuritiesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 12, 2015·0 cites·20 claims
- 1849US2023317666A1Semiconductor device with metal silicide layerINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 1948US2016181441A1Semiconductor Device and Method for Manufacturing a Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Application pending·0 cites
- 2047US9917000B2Wafer carrier, method for manufacturing the same and method for carrying a waferINFINEON TECHNOLOGIES AG·Filed 2015·Granted Mar 13, 2018·0 cites·15 claims
- 2143US10763339B2Method for manufacturing a semiconductor device having a Schottky contactINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Sep 1, 2020·0 cites·18 claims
- 2236US10699934B2Substrate carrier, a processing arrangement and a methodINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 30, 2020·0 cites·19 claims
- 2332US2016211140A1Method for Processing a Semiconductor SurfaceINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →