Inventor · disambiguated record
Roman Knoefler
Also filed as: KNOEFLER ROMAN
25 granted patents·5 pending applications·609 citations·filing 2004–2020
95Inventor score
Files withINFINEON TECHNOLOGIES AG10QIMONDA AG5WEBER HANS4INFINEON TECHNOLOGIES AUSTRIA3INFINEON TECHNOLOGIES AUSTRIA AG2
Top patents by PatentIndex Score
30 records- 0197US7915667B2Integrated circuits having a contact region and methods for manufacturing the sameQIMONDA AG·Filed 2008·Granted Mar 29, 2011·491 cites·20 claims
- 0291US7488670B2Direct channel stressINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 10, 2009·16 cites·29 claims
- 0389US7985676B2Method of making a contact in a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2010·Granted Jul 26, 2011·10 cites·22 claims
- 0487US9105487B2Super junction semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted Aug 11, 2015·6 cites·18 claims
- 0586US9166005B2Semiconductor device with charge compensation structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Oct 20, 2015·8 cites·11 claims
- 0686US8710620B2Method of manufacturing semiconductor devices using ion implantationSCHULZE HANS-JOACHIM·Filed 2012·Granted Apr 29, 2014·6 cites·15 claims
- 0785US7875516B2Integrated circuit including a first gate stack and a second gate stack and a method of manufacturingQIMONDA AG·Filed 2007·Granted Jan 25, 2011·12 cites·19 claims
- 0879US9178016B2Charge protection for III-nitride devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Nov 3, 2015·4 cites·29 claims
- 0979US7462038B2Interconnection structure and method of manufacturing the sameQIMONDA AG·Filed 2007·Granted Dec 9, 2008·18 cites·16 claims
- 1078US7642158B2Semiconductor memory device and method of productionINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 5, 2010·6 cites·25 claims
- 1177US7800182B2Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the sameINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 21, 2010·6 cites·17 claims
- 1277US7678704B2Method of making a contact in a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 16, 2010·5 cites·26 claims
- 1370US9293528B2Field-effect semiconductor device and manufacturing thereforINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Mar 22, 2016·2 cites·18 claims
- 1469US11329126B2Method of manufacturing a superjunction semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted May 10, 2022·1 cites·20 claims
- 1566US9418851B2Method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Aug 16, 2016·1 cites·10 claims
- 1666US7501651B2Test structure of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 10, 2009·2 cites·24 claims
- 1765US9112053B2Method for producing a semiconductor device including a dielectric layerWEBER HANS·Filed 2012·Granted Aug 18, 2015·2 cites·16 claims
- 1863US8288230B2Method for producing a gate electrode structureWEBER HANS·Filed 2010·Granted Oct 16, 2012·2 cites·21 claims
- 1962US8018070B2Semiconductor device, method for manufacturing semiconductor devices and mask systems used in the manufacturing of semiconductor devicesQIMONDA AG·Filed 2007·Granted Sep 13, 2011·4 cites·23 claims
- 2060US7282451B2Methods of forming integrated circuit devices having metal interconnect layers thereinINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 16, 2007·1 cites·26 claims
- 2159US8138055B2Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the sameHAN JIN-PING·Filed 2010·Granted Mar 20, 2012·1 cites·23 claims
- 2256US7858964B2Semiconductor device formed in a recrystallized layerINFINEON TECHNOLOGIES AG·Filed 2009·Granted Dec 28, 2010·0 cites·23 claims
- 2354US7217619B2Method for fabricating memory componentsINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 15, 2007·5 cites·16 claims
- 2445US2020388672A1Semiconductor Device and Method of Producing the SameINFINEON TECH DRESDEN GMBH & CO KG·Filed 2020·Application pending·0 cites
- 2544US2008181007A1Semiconductor Device with Reduced Structural Pitch and Method of Making the SameQIMONDA AG·Filed 2007·Application pending·0 cites
- 2642US2008142897A1Integrated circuit system having strained transistorCHARTERED SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 2739US8399325B2Method for producing an electrode structureWEBER HANS·Filed 2011·Granted Mar 19, 2013·0 cites·26 claims
- 2838US2009236682A1Layer stack including a tungsten layerBOUBEKEUR HOCINE·Filed 2008·Application pending·0 cites
- 2934US2013075801A1Self-adjusted capacitive structureWEBER HANS·Filed 2011·Application pending·0 cites
- 3027US7026220B1Method for production of charge-trapping memory devicesINFINEON TECHNOLOGIES AG·Filed 2004·Granted Apr 11, 2006·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →