Inventor · disambiguated record
Roy Lambertson
Also filed as: LAMBERTSON ROY · LAMBERTSON ROY T · LAMBERTSON ROY TABLER
21 granted patents·5 pending applications·431 citations·filing 1994–2021
96Inventor score
Top patents by PatentIndex Score
26 records- 0198US8045364B2Non-volatile memory device ion barrierUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Oct 25, 2011·121 cites·32 claims
- 0295US5544103ACompact page-erasable eeprom non-volatile memoryXICOR INC·Filed 1994·Granted Aug 6, 1996·128 cites·37 claims
- 0393US7995371B2Threshold device for a memory arrayUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Aug 9, 2011·30 cites·39 claims
- 0491US8027215B2Array operation using a schottky diode as a non-ohmic isolation deviceUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Sep 27, 2011·18 cites·27 claims
- 0590US9159913B2Two-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·6 cites·20 claims
- 0689US10224480B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Mar 5, 2019·4 cites·18 claims
- 0788US8031510B2Ion barrier capUNITY SEMICONDUCTOR CORP·Filed 2010·Granted Oct 4, 2011·9 cites·17 claims
- 0878US6088269ACompact page-erasable EEPROM non-volatile memoryXICOR INC·Filed 1998·Granted Jul 11, 2000·34 cites·39 claims
- 0977US5835409ACompact page-erasable EEPROM non-volatile memoryXICOR INC·Filed 1996·Granted Nov 10, 1998·33 cites·40 claims
- 1075US11672189B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 1175US8254196B2Array operation using a schottky diode as a non ohmic selection deviceLAMBERTSON ROY·Filed 2011·Granted Aug 28, 2012·4 cites·40 claims
- 1272US11063214B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Jul 13, 2021·0 cites·20 claims
- 1372US8274817B2Non volatile memory device ion barrierSCHLOSS LAWRENCE·Filed 2011·Granted Sep 25, 2012·3 cites·30 claims
- 1471US10680171B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Jun 9, 2020·0 cites·20 claims
- 1571US8565039B2Array operation using a schottky diode as a non-ohmic selection deviceLAMBERTSON ROY·Filed 2012·Granted Oct 22, 2013·3 cites·40 claims
- 1670US9831425B2Two-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Nov 28, 2017·1 cites·20 claims
- 1769US6529038B2Antifuse programming methodACTEL CORP·Filed 2000·Granted Mar 4, 2003·17 cites·17 claims
- 1864US6603142B1Antifuse incorporating tantalum nitride barrier layerACTEL CORP·Filed 2000·Granted Aug 5, 2003·11 cites·8 claims
- 1961US6713369B1Antifuse incorporating tantalum nitride barrier layerACTEL CORP·Filed 2002·Granted Mar 30, 2004·9 cites·7 claims
- 2049US2012087174A1Two Terminal Re Writeable Non Volatile Ion Transport Memory DeviceRINERSON DARRELL·Filed 2011·Application pending·0 cites
- 2147US2009303773A1Multi-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2009·Application pending·0 cites
- 2247US2014014893A1Array operation using a schottky diode as a non-ohmic selection deviceUNITY SEMICONDUCTOR CORP·Filed 2013·Application pending·0 cites
- 2347US2009303772A1Two-Terminal Reversibly Switchable Memory DeviceUNITY SEMICONDUCTOR CORP·Filed 2009·Application pending·0 cites
- 2446US8493771B2Non-volatile memory device ion barrierSCHLOSS LAWRENCE·Filed 2012·Granted Jul 23, 2013·0 cites·32 claims
- 2543US2006171200A1Memory using mixed valence conductive oxidesUNITY SEMICONDUCTOR CORP·Filed 2005·Application pending·0 cites
- 2635US8395928B2Threshold device for a memory arrayBREWER JULIE CASPERSON·Filed 2011·Granted Mar 12, 2013·0 cites·27 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →