Inventor · disambiguated record
Roland Rupp
Also filed as: RUPP ROLAND
141 granted patents·17 pending applications·1,021 citations·filing 1994–2025
99Inventor score
Files withINFINEON TECHNOLOGIES AG117SIEMENS AG8PILZ GMBH & CO7INFINEON TECHNOLOGIES AUSTRIA6INFINEON TECHNOLOGIES AUSTRIA AG4
Top patents by PatentIndex Score
158 records- 0194US11715768B2Silicon carbide components and methods for producing silicon carbide componentsINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 1, 2023·2 cites·16 claims
- 0294US10211306B2Semiconductor device with diode region and trench gate structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 19, 2019·15 cites·21 claims
- 0394US10074741B2Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode regionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Sep 11, 2018·10 cites·23 claims
- 0494US9741712B2Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal latticeINFINEON TECHNOLOGIES AG·Filed 2016·Granted Aug 22, 2017·8 cites·21 claims
- 0593US11107893B2Method for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Aug 31, 2021·6 cites·20 claims
- 0693US7775072B2Safety switch for a moveable guard doorPILZ GMBH & CO KG·Filed 2006·Granted Aug 17, 2010·40 cites·21 claims
- 0793US7459365B2Method for fabricating a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 2, 2008·29 cites·32 claims
- 0892US11069778B2Silicon carbide components and methods for producing silicon carbide componentsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jul 20, 2021·6 cites·19 claims
- 0992US10903078B2Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 26, 2021·9 cites·28 claims
- 1092US9997515B2Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal latticeINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 12, 2018·6 cites·24 claims
- 1192US8822306B2Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite coreBERGER RUDOLF·Filed 2011·Granted Sep 2, 2014·16 cites·24 claims
- 1292US5964943AMethod of producing boron-doped monocrystalline silicon carbideSIEMENS AG·Filed 1995·Granted Oct 12, 1999·95 cites·17 claims
- 1391US11373863B2Method of manufacturing a silicon carbide device and wafer composite including laser modified zones in a handle substrateINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jun 28, 2022·3 cites·12 claims
- 1491US11031483B2Forming semiconductor devices in silicon carbideINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 8, 2021·4 cites·24 claims
- 1590US9818818B2Power semiconductor device including trench gate structures with longitudinal axes tilted to a main crystal directionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 14, 2017·6 cites·15 claims
- 1689US11476111B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 18, 2022·2 cites·13 claims
- 1789US6532508B2Control system for controlling safety-critical processesPILZ GMBH & CO·Filed 2001·Granted Mar 11, 2003·60 cites·16 claims
- 1889US6153012ADevice for treating a substrateSIEMENS AG·Filed 1997·Granted Nov 28, 2000·87 cites·15 claims
- 1989US6139624AProcess for producing an electrical contact on a SIC surfaceSIEMENS AG·Filed 1996·Granted Oct 31, 2000·81 cites·24 claims
- 2088US9704750B2Method for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jul 11, 2017·5 cites·20 claims
- 2187US11887894B2Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layersINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 30, 2024·1 cites·21 claims
- 2287US6832343B2Apparatus for controlling safety-critical processesPILZ GMBH & CO·Filed 2002·Granted Dec 14, 2004·48 cites·16 claims
- 2386US10475909B2Electric assembly including a bipolar switching device and a wide bandgap transistorINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 12, 2019·5 cites·22 claims
- 2486US8823089B2SiC semiconductor power deviceSCHULZE HANS-JOACHIM·Filed 2011·Granted Sep 2, 2014·7 cites·12 claims
- 2586US7656629B2Safety switch for a safety circuitPILZ GMBH & CO KG·Filed 2006·Granted Feb 2, 2010·16 cites·25 claims
- 2686US6320205B1Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diodeINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 20, 2001·38 cites·18 claims
- 2784US12412740B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 2884US12272738B2Methods of forming semiconductor devices in a layer of epitaxial silicon carbideINFINEON TECHNOLOGIES AG·Filed 2023·Granted Apr 8, 2025·0 cites·19 claims
- 2984US9576844B2Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite coreINFINEON TECHNOLOGIES AG·Filed 2015·Granted Feb 21, 2017·3 cites·17 claims
- 3083US10615040B2Superjunction structure in a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 7, 2020·3 cites·11 claims
- 3183US6905916B2Method for processing a surface of an SiC semiconductor layer and Schottky contactINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 14, 2005·31 cites·11 claims
- 3282US11107732B2Methods for processing a wide band gap semiconductor wafer, methods for forming a plurality of thin wide band gap semiconductor wafers, and wide band gap semiconductor wafersINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 31, 2021·2 cites·19 claims
- 3382US8450196B2Production of an integrated circuit including electrical contact on SiCRUPP ROLAND·Filed 2007·Granted May 28, 2013·7 cites·5 claims
- 3482US6299683B1Method and apparatus for the production of SiC by means of CVD with improved gas utilizationSIEMENS AG·Filed 1997·Granted Oct 9, 2001·56 cites·7 claims
- 3581US9219049B2Compound structure and method for forming a compound structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted Dec 22, 2015·4 cites·22 claims
- 3680US10164019B2Semiconductor device and a method for forming a semiconductorINFINEON TECHNOLOGIES AG·Filed 2016·Granted Dec 25, 2018·2 cites·17 claims
- 3780US9245944B2Silicon carbide device and a method for manufacturing a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jan 26, 2016·5 cites·22 claims
- 3880US8944478B2Locking apparatus having a tumbler for safety doorsPULLMANN JUERGEN·Filed 2012·Granted Feb 3, 2015·8 cites·13 claims
- 3980US2025194125A1Methods of Semiconductor Device Fabrication Involving Porous Silicon CarbideINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 4079US12302619B2Silicon carbide components and methods for producing silicon carbide componentsINFINEON TECHNOLOGIES AG·Filed 2023·Granted May 13, 2025·0 cites·16 claims
- 4179US10700168B2Wide band gap semiconductor device and a method for forming a wide band gap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 30, 2020·2 cites·15 claims
- 4279US8144718B2Control system having a plurality of spatially distributed stations, and method for transmitting data in such a control systemSCHWENKEL HANS·Filed 2007·Granted Mar 27, 2012·14 cites·21 claims
- 4379US6740167B1Device for mounting a substrate and method for producing an insert for a susceptorSICED ELECT DEV GMBH & CO KG·Filed 2000·Granted May 25, 2004·27 cites·13 claims
- 4478US10217636B2Method of manufacturing a silicon carbide semiconductor device by removing amorphized portionsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 26, 2019·2 cites·17 claims
- 4578US9905655B2Method for reducing bipolar degradation in an SIC semiconductor device and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 27, 2018·2 cites·36 claims
- 4678US7772621B2Semiconductor device with structured current spread region and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Aug 10, 2010·7 cites·20 claims
- 4777US11881397B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
- 4877US10431504B2Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Oct 1, 2019·2 cites·12 claims
- 4977US10020226B2Method for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 10, 2018·2 cites·20 claims
- 5077US7763506B2Method for making an integrated circuit including vertical junction field effect transistorsINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jul 27, 2010·7 cites·14 claims
Showing the top 50 of 158 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →