Inventor · disambiguated record
Robert F. Steimle
Also filed as: STEIMLE ROBERT · STEIMLE ROBERT F
39 granted patents·1 pending application·497 citations·filing 2002–2016
98Inventor score
Files withFREESCALE SEMICONDUCTOR INC30MONTEZ RUBEN B3STEIMLE ROBERT F3HANNA JEFFREY D1KARLIN LISA H1
Top patents by PatentIndex Score
40 records- 0196US7524719B2Method of making self-aligned split gate memory cellFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 28, 2009·38 cites·16 claims
- 0295US7183159B2Method of forming an integrated circuit having nanocluster devices and non-nanocluster devicesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Feb 27, 2007·41 cites·19 claims
- 0394US7416945B1Method for forming a split gate memory deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 26, 2008·35 cites·20 claims
- 0493US9443782B1Method of bond pad protection during wafer processingFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Sep 13, 2016·15 cites·16 claims
- 0592US7456465B2Split gate memory cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 25, 2008·19 cites·8 claims
- 0691US6903967B2Memory with charge storage locations and adjacent gate structuresFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jun 7, 2005·57 cites·38 claims
- 0789US7579243B2Split gate memory cell methodFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Aug 25, 2009·18 cites·20 claims
- 0889US6958265B2Semiconductor device with nanoclustersFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Oct 25, 2005·48 cites·45 claims
- 0986US7338894B2Semiconductor device having nitridated oxide layer and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 4, 2008·12 cites·12 claims
- 1084US7445984B2Method for removing nanoclusters from selected regionsFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Nov 4, 2008·10 cites·13 claims
- 1184US7186616B2Method of removing nanoclusters in a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 6, 2007·9 cites·14 claims
- 1283US7432158B1Method for retaining nanocluster size and electrical characteristics during processingFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 7, 2008·11 cites·19 claims
- 1383US7341914B2Method for forming a non-volatile memory and a peripheral device on a semiconductor substrateFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 11, 2008·8 cites·20 claims
- 1483US7091130B1Method of forming a nanocluster charge storage deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Aug 15, 2006·32 cites·22 claims
- 1582US9463976B2MEMS fabrication process with two cavities operating at different pressuresSTEIMLE ROBERT F·Filed 2014·Granted Oct 11, 2016·4 cites·20 claims
- 1682US7700439B2Silicided nonvolatile memory and method of making sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 20, 2010·10 cites·11 claims
- 1782US7361543B2Method of forming a nanocluster charge storage deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Apr 22, 2008·24 cites·21 claims
- 1879US7192876B2Transistor with independent gate structuresFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Mar 20, 2007·23 cites·39 claims
- 1978US7091089B2Method of forming a nanocluster charge storage deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Aug 15, 2006·36 cites·19 claims
- 2078US6964902B2Method for removing nanoclusters from selected regionsFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 15, 2005·20 cites·26 claims
- 2176US7732278B2Split gate memory cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jun 8, 2010·5 cites·12 claims
- 2273US9776853B2Reducing MEMS stiction by deposition of nanoclustersFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Oct 3, 2017·1 cites·3 claims
- 2372US7838363B2Method of forming a split gate non-volatile memory cellFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Nov 23, 2010·5 cites·7 claims
- 2471US9988260B2Rough MEMS surfaceFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Jun 5, 2018·1 cites·22 claims
- 2571US9550664B2Reducing MEMS stiction by increasing surface roughnessFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jan 24, 2017·2 cites·20 claims
- 2671US7781831B2Semiconductor device having nitridated oxide layer and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 24, 2010·4 cites·8 claims
- 2769US8633088B2Glass frit wafer bond protective structureMONTEZ RUBEN B·Filed 2012·Granted Jan 21, 2014·2 cites·20 claims
- 2868US9290380B2Reducing MEMS stiction by deposition of nanoclustersSTEIMLE ROBERT F·Filed 2012·Granted Mar 22, 2016·1 cites·8 claims
- 2965US8895339B2Reducing MEMS stiction by introduction of a carbon barrierMONTEZ RUBEN B·Filed 2012·Granted Nov 25, 2014·1 cites·12 claims
- 3063US9637372B2Bonded wafer structure having cavities with low pressure and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted May 2, 2017·1 cites·15 claims
- 3159US9463973B2Reducing MEMS stiction by introduction of a carbon barrierMONTEZ RUBEN B·Filed 2014·Granted Oct 11, 2016·0 cites·8 claims
- 3254US9425115B2Glass frit wafer bond protective structureFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Aug 23, 2016·0 cites·21 claims
- 3351US8373221B2Nanocluster charge storage deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Feb 12, 2013·0 cites·18 claims
- 3450US9434602B2Reducing MEMS stiction by deposition of nanoclustersSTEIMLE ROBERT F·Filed 2014·Granted Sep 6, 2016·0 cites·16 claims
- 3548US6689676B1Method for forming a semiconductor device structure in a semiconductor layerMOTOROLA INC·Filed 2002·Granted Feb 10, 2004·4 cites·15 claims
- 3647US9458010B1Systems and methods for anchoring components in MEMS semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Oct 4, 2016·0 cites·14 claims
- 3739US9418830B2Methods for bonding semiconductor wafersHANNA JEFFREY D·Filed 2014·Granted Aug 16, 2016·0 cites·15 claims
- 3837US7160775B2Method of discharging a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 9, 2007·0 cites·11 claims
- 3936US2004087163A1Method for forming magnetic clad bit lineFiled 2002·Application pending·0 cites
- 4035US8455286B2Method of making a micro-electro-mechanical-systems (MEMS) deviceKARLIN LISA H·Filed 2010·Granted Jun 4, 2013·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →