Inventor · disambiguated record
Robert Wu
Also filed as: WU ROBERT · WU ROBERT W
28 granted patents·5 pending applications·2,389 citations·filing 1990–2007
98Inventor score
Top patents by PatentIndex Score
33 records- 0198US5605637AAdjustable dc bias control in a plasma reactorAPPLIED MATERIALS INC·Filed 1994·Granted Feb 25, 1997·231 cites·21 claims
- 0297US6308654B1Inductively coupled parallel-plate plasma reactor with a conical domeAPPLIED MATERIALS INC·Filed 1996·Granted Oct 30, 2001·206 cites·31 claims
- 0397US5904778ASilicon carbide composite article particularly useful for plasma reactorsAPPLIED MATERIALS INC·Filed 1996·Granted May 18, 1999·146 cites·41 claims
- 0497US5891350AAdjusting DC bias voltage in plasma chambersAPPLIED MATERIALS INC·Filed 1996·Granted Apr 6, 1999·186 cites·21 claims
- 0596US6776873B1Yttrium oxide based surface coating for semiconductor IC processing vacuum chambersFiled 2002·Granted Aug 17, 2004·153 cites·6 claims
- 0696US6074512AInductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet linersAPPLIED MATERIALS INC·Filed 1997·Granted Jun 13, 2000·236 cites·101 claims
- 0792US5607542AInductively enhanced reactive ion etchingAPPLIED MATERIALS INC·Filed 1994·Granted Mar 4, 1997·78 cites·20 claims
- 0891US6074959AMethod manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxideAPPLIED MATERIALS INC·Filed 1997·Granted Jun 13, 2000·123 cites·54 claims
- 0990US6513452B2Adjusting DC bias voltage in plasma chamberAPPLIED MATERIALS INC·Filed 2001·Granted Feb 4, 2003·29 cites·20 claims
- 1090US6009830AIndependent gas feeds in a plasma reactorAPPLIED MATERIALS INC·Filed 1997·Granted Jan 4, 2000·135 cites·28 claims
- 1189US6454898B1Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet linersAPPLIED MATERIALS INC·Filed 2000·Granted Sep 24, 2002·43 cites·28 claims
- 1286US5176790AProcess for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metalAPPLIED MATERIALS INC·Filed 1991·Granted Jan 5, 1993·108 cites·49 claims
- 1385US7992518B2Silicon carbide gas distribution plate and RF electrode for plasma etch chamberADVANCED MICRO FAB EQUIP INC·Filed 2007·Granted Aug 9, 2011·10 cites·11 claims
- 1485US5910221ABonded silicon carbide parts in a plasma reactorAPPLIED MATERIALS INC·Filed 1997·Granted Jun 8, 1999·63 cites·20 claims
- 1585US5865937ABroad-band adjustable power ratio phase-inverting plasma reactorAPPLIED MATERIALS INC·Filed 1995·Granted Feb 2, 1999·48 cites·36 claims
- 1684US5110712AIncorporation of dielectric layers in a semiconductorHEWLETT PACKARD CO·Filed 1990·Granted May 5, 1992·114 cites·9 claims
- 1782US6221782B1Adjusting DC bias voltage in plasma chamberAPPLIED MATERIALS INC·Filed 1999·Granted Apr 24, 2001·31 cites·12 claims
- 1882US5729423APuncture resistant electrostatic chuckAPPLIED MATERIALS INC·Filed 1996·Granted Mar 17, 1998·57 cites·45 claims
- 1981US6432318B1Dielectric etch process reducing striations and maintaining critical dimensionsAPPLIED MATERIALS INC·Filed 2000·Granted Aug 13, 2002·24 cites·16 claims
- 2080US6183655B1Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbonAPPLIED MATERIALS INC·Filed 1998·Granted Feb 6, 2001·52 cites·26 claims
- 2180US5514247AProcess for plasma etching of viasAPPLIED MATERIALS INC·Filed 1994·Granted May 7, 1996·72 cites·26 claims
- 2279US5560780AProtective coating for dielectric material on wafer support used in integrated circuit processing apparatus and method of forming sameAPPLIED MATERIALS INC·Filed 1995·Granted Oct 1, 1996·57 cites·24 claims
- 2377US5986875APuncture resistant electrostatic chuckAPPLIED MATERIALS INC·Filed 1998·Granted Nov 16, 1999·42 cites·32 claims
- 2474US5965463ASilane etching processAPPLIED MATERIALS INC·Filed 1997·Granted Oct 12, 1999·44 cites·26 claims
- 2573US5585012ASelf-cleaning polymer-free top electrode for parallel electrode etch operationAPPLIED MATERIALS INC·Filed 1994·Granted Dec 17, 1996·52 cites·9 claims
- 2670US6800213B2Precision dielectric etch using hexafluorobutadieneFiled 2002·Granted Oct 5, 2004·11 cites·22 claims
- 2763US6379574B1Integrated post-etch treatment for a dielectric etch processAPPLIED MATERIALS INC·Filed 1999·Granted Apr 30, 2002·31 cites·24 claims
- 2854US2008213496A1Method of coating semiconductor processing apparatus with protective yttrium-containing coatingsAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 2941US6361705B1Plasma process for selectively etching oxide using fluoropropane or fluoropropyleneAPPLIED MATERIALS INC·Filed 1999·Granted Mar 26, 2002·7 cites·8 claims
- 3037US2003192646A1Plasma processing chamber having magnetic assembly and methodAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 3136US2003037879A1Top gas feed lid for semiconductor processing chamberAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 3235US2003198749A1Coated silicon carbide cermet used in a plasma reactorAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 3331US2002074312A1High density plasma post-etch treatment for a dielectric etch processFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →