Inventor · disambiguated record
Ruqiang Bao
Also filed as: BAO RUQIANG
185 granted patents·33 pending applications·732 citations·filing 2013–2024
99Inventor score
Top patents by PatentIndex Score
218 records- 0199US10490559B1Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensionsIBM·Filed 2018·Granted Nov 26, 2019·71 cites·16 claims
- 0299US9997519B1Dual channel structures with multiple threshold voltagesIBM·Filed 2017·Granted Jun 12, 2018·102 cites·20 claims
- 0398US10020254B1Integration of super via structure in BEOLIBM·Filed 2017·Granted Jul 10, 2018·39 cites·8 claims
- 0498US10020255B1Integration of super via structure in BEOLIBM·Filed 2017·Granted Jul 10, 2018·36 cites·12 claims
- 0598US10002791B1Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETSIBM·Filed 2017·Granted Jun 19, 2018·20 cites·10 claims
- 0698US9960272B1Bottom contact resistance reduction on VFETIBM·Filed 2017·Granted May 1, 2018·27 cites·18 claims
- 0798US9502307B1Forming a semiconductor structure for reduced negative bias temperature instabilityIBM·Filed 2015·Granted Nov 22, 2016·36 cites·8 claims
- 0897US11271106B2Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contactsIBM·Filed 2020·Granted Mar 8, 2022·4 cites·20 claims
- 0997US10797163B1Leakage control for gate-all-around field-effect transistor devicesIBM·Filed 2019·Granted Oct 6, 2020·26 cites·19 claims
- 1097US10276687B1Formation of self-aligned bottom spacer for vertical transistorsIBM·Filed 2017·Granted Apr 30, 2019·15 cites·18 claims
- 1196US10741401B1Self-aligned semiconductor gate cutIBM·Filed 2019·Granted Aug 11, 2020·14 cites·20 claims
- 1296US10395988B1Vertical FET transistor with reduced source/drain contact resistanceIBM·Filed 2018·Granted Aug 27, 2019·16 cites·20 claims
- 1396US10008417B1Vertical transport fin field effect transistors having different channel lengthsIBM·Filed 2017·Granted Jun 26, 2018·11 cites·15 claims
- 1496US9922984B1Threshold voltage modulation through channel length adjustmentIBM·Filed 2017·Granted Mar 20, 2018·10 cites·20 claims
- 1596US9704754B1Self-aligned spacer for cut-last transistor fabricationIBM·Filed 2016·Granted Jul 11, 2017·13 cites·20 claims
- 1696US9553092B2Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 24, 2017·15 cites·11 claims
- 1795US12176348B2Self-aligned hybrid substrate stacked gate-all-around transistorsIBM·Filed 2021·Granted Dec 24, 2024·2 cites·24 claims
- 1895US11456415B2Phase change memory cell with a wrap around and ring type of electrode contact and a projection linerIBM·Filed 2020·Granted Sep 27, 2022·4 cites·20 claims
- 1995US10276452B1Low undercut N-P work function metal patterning in nanosheet replacement metal gate processIBM·Filed 2018·Granted Apr 30, 2019·13 cites·14 claims
- 2095US9922983B1Threshold voltage modulation through channel length adjustmentIBM·Filed 2016·Granted Mar 20, 2018·10 cites·14 claims
- 2195US9343372B1Metal stack for reduced gate resistanceGLOBALFOUNDRIES INC·Filed 2014·Granted May 17, 2016·23 cites·20 claims
- 2294US10692873B2Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensionsIBM·Filed 2019·Granted Jun 23, 2020·6 cites·20 claims
- 2394US10546787B2Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS deviceIBM·Filed 2018·Granted Jan 28, 2020·6 cites·11 claims
- 2494US9905476B2Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETsGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 27, 2018·9 cites·20 claims
- 2593US10930734B2Nanosheet FET bottom isolationIBM·Filed 2018·Granted Feb 23, 2021·6 cites·14 claims
- 2693US10777469B2Self-aligned top spacers for vertical FETs with in situ solid state dopingIBM·Filed 2018·Granted Sep 15, 2020·8 cites·16 claims
- 2793US10553700B2Gate cut in RMGIBM·Filed 2018·Granted Feb 4, 2020·6 cites·12 claims
- 2893US10529815B2Conformal replacement gate electrode for short channel devicesIBM·Filed 2017·Granted Jan 7, 2020·7 cites·14 claims
- 2993US10373912B2Replacement metal gate processes for vertical transport field-effect transistorIBM·Filed 2018·Granted Aug 6, 2019·10 cites·17 claims
- 3093US10236219B1VFET metal gate patterning for vertical transport field effect transistorIBM·Filed 2017·Granted Mar 19, 2019·7 cites·20 claims
- 3193US9589806B1Integrated circuit with replacement gate stacks and method of forming sameGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 7, 2017·10 cites·13 claims
- 3293US9576958B1Forming a semiconductor structure for reduced negative bias temperature instabilityIBM·Filed 2016·Granted Feb 21, 2017·6 cites·14 claims
- 3392US10692990B2Gate cut in RMGIBM·Filed 2019·Granted Jun 23, 2020·5 cites·18 claims
- 3492US10204828B1Enabling low resistance gates and contacts integrated with bilayer dielectricsIBM·Filed 2018·Granted Feb 12, 2019·8 cites·20 claims
- 3591US11289573B2Contact resistance reduction in nanosheet device structureIBM·Filed 2019·Granted Mar 29, 2022·5 cites·20 claims
- 3691US11282838B2Stacked gate structuresIBM·Filed 2020·Granted Mar 22, 2022·2 cites·16 claims
- 3791US11251285B2Approach to control over-etching of bottom spacers in vertical fin field effect transistor devicesIBM·Filed 2019·Granted Feb 15, 2022·4 cites·20 claims
- 3891US10741663B1Encapsulation layer for vertical transport field-effect transistor gate stackIBM·Filed 2019·Granted Aug 11, 2020·6 cites·20 claims
- 3991US10680083B2Oxide isolated fin-type field-effect transistorsIBM·Filed 2018·Granted Jun 9, 2020·6 cites·10 claims
- 4091US10128347B2Gate-all-around field effect transistor having multiple threshold voltagesIBM·Filed 2017·Granted Nov 13, 2018·6 cites·14 claims
- 4191US10074574B2Integrated circuit with replacement gate stacks and method of forming sameIBM·Filed 2017·Granted Sep 11, 2018·5 cites·19 claims
- 4290US11476418B2Phase change memory cell with a projection linerIBM·Filed 2020·Granted Oct 18, 2022·2 cites·14 claims
- 4390US10692778B2Gate-all-around FETs having uniform threshold voltageIBM·Filed 2018·Granted Jun 23, 2020·4 cites·15 claims
- 4488US12278237B2Stacked FETS with non-shared work function metalsIBM·Filed 2021·Granted Apr 15, 2025·1 cites·24 claims
- 4588US10103147B1Vertical transport transistors with equal gate stack thicknessesIBM·Filed 2017·Granted Oct 16, 2018·4 cites·16 claims
- 4687US10658299B2Replacement metal gate processes for vertical transport field-effect transistorIBM·Filed 2019·Granted May 19, 2020·4 cites·20 claims
- 4787US10340340B2Multiple-threshold nanosheet transistorsIBM·Filed 2016·Granted Jul 2, 2019·3 cites·2 claims
- 4886US10134642B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2016·Granted Nov 20, 2018·4 cites·15 claims
- 4985US11195762B2Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS deviceIBM·Filed 2019·Granted Dec 7, 2021·2 cites·17 claims
- 5085US11189616B2Multi-threshold voltage non-planar complementary metal-oxtde-semiconductor devicesIBM·Filed 2019·Granted Nov 30, 2021·2 cites·17 claims
Showing the top 50 of 218 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →