Inventor · disambiguated record
Rudolf Elpelt
Also filed as: ELPELT RUDOLF
39 granted patents·10 pending applications·184 citations·filing 2003–2025
96Inventor score
Files withINFINEON TECHNOLOGIES AG39INFINEON TECHNOLOGIES AUSTRIA3ELPELT RUDOLF2SICED ELECT DEV GMBH & CO KG2INFINEON TECHNOLOGIES AUSTRIA AG1
Top patents by PatentIndex Score
49 records- 0197US11367775B1Shielding structure for SiC devicesINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jun 21, 2022·6 cites·21 claims
- 0295US7615802B2Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structureSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Nov 10, 2009·125 cites·20 claims
- 0393US10586845B1SiC trench transistor device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 10, 2020·9 cites·25 claims
- 0490US11552173B2Silicon carbide device with trench gateINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·2 cites·26 claims
- 0583US10957768B1Silicon carbide device with an implantation tail compensation regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Mar 23, 2021·3 cites·20 claims
- 0682US12266694B2Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2023·Granted Apr 1, 2025·0 cites·27 claims
- 0781US11552170B2Semiconductor device including current spread regionINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·1 cites·20 claims
- 0881US10615254B2Semiconductor device including a super junction structure in a SiC semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 7, 2020·2 cites·15 claims
- 0978US7772621B2Semiconductor device with structured current spread region and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Aug 10, 2010·7 cites·20 claims
- 1077US7763506B2Method for making an integrated circuit including vertical junction field effect transistorsINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jul 27, 2010·7 cites·14 claims
- 1177US7745273B2Semiconductor device and method for forming sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jun 29, 2010·5 cites·24 claims
- 1277US2025203986A1Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 1376US11888032B2Method of producing a silicon carbide device with a trench gateINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
- 1473US9257511B2Silicon carbide device and a method for forming a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Feb 9, 2016·2 cites·18 claims
- 1572US11145755B2Silicon carbide semiconductor component with edge termination structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Oct 12, 2021·1 cites·20 claims
- 1672US8994078B2Semiconductor deviceKUECK DANIEL·Filed 2012·Granted Mar 31, 2015·4 cites·18 claims
- 1771US10861964B2Semiconductor device with junction termination zoneINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 8, 2020·1 cites·16 claims
- 1870US12176396B2Semiconductor device including current spread regionINFINEON TECHNOLOGIES AG·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 1969US11462611B2SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 4, 2022·0 cites·15 claims
- 2068US11626477B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2021·Granted Apr 11, 2023·0 cites·23 claims
- 2166US10896952B2SiC device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 19, 2021·0 cites·16 claims
- 2264US8102012B2Transistor component having a shielding structurePETERS DETHARD·Filed 2009·Granted Jan 24, 2012·4 cites·36 claims
- 2363US2025096149A1Semiconductor device with a silicon carbide portion and a glass structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2462US2025063775A1Semiconductor device having a superjunction-structureINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2560US11101343B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 2657US12119377B2SiC devices with shielding structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 15, 2024·0 cites·22 claims
- 2757US11735633B2Silicon carbide device with trench gate structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2020·Granted Aug 22, 2023·0 cites·18 claims
- 2857US10915029B2Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zoneINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 9, 2021·0 cites·20 claims
- 2956US8772140B2Production method for a unipolar semiconductor component and semiconductor deviceELPELT RUDOLF·Filed 2010·Granted Jul 8, 2014·1 cites·18 claims
- 3056US2024072122A1Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 3156US2024096988A1Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 3256US2024194778A1Semiconductor Device Having a Field Termination Structure and a Charge Balance Structure, and Method of Producing the Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 3355US2023163167A1Semiconductor device including a trench gate structureINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 3454US10115791B2Semiconductor device including a super junction structure in a SiC semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2017·Granted Oct 30, 2018·0 cites·21 claims
- 3554US9035322B2Silicon carbide device and a method for manufacturing a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 19, 2015·0 cites·15 claims
- 3654US2025324714A1Silicon carbide device with trench gateINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 3753US11757031B2Power transistor with integrated Schottky diodeINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 12, 2023·0 cites·20 claims
- 3853US10120287B2Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zoneINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 6, 2018·0 cites·24 claims
- 3953US2023317797A1Wide band gap semiconductor device and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 4053US2025366025A1Superjunction transistor deviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 4152US9496346B2Silicon carbide device and a method for forming a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Nov 15, 2016·0 cites·16 claims
- 4251US11380756B2Silicon carbide device with Schottky contactINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 5, 2022·0 cites·20 claims
- 4351US9412808B2Silicon carbide device and a method for manufacturing a silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 9, 2016·0 cites·17 claims
- 4450US10580878B1SiC device with buried doped regionINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 3, 2020·0 cites·20 claims
- 4550US10541325B2Semiconductor device with termination structure including field zones and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jan 21, 2020·0 cites·28 claims
- 4648US7071503B2Semiconductor structure with a switch element and an edge elementSICED ELECT DEV GMBH & CO KG·Filed 2004·Granted Jul 4, 2006·4 cites·19 claims
- 4746US10056365B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Aug 21, 2018·0 cites·15 claims
- 4844US11437470B2Silicon carbide semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 6, 2022·0 cites·20 claims
- 4935US8264016B2Semiconductor device including a channel stop zoneELPELT RUDOLF·Filed 2010·Granted Sep 11, 2012·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →