Inventor · disambiguated record

Ru Huang

Also filed as: HUANG RU · Huang ru-hui

66 granted patents·36 pending applications·144 citations·filing 2010–2025

98Inventor score

Technology areasH10D H10P G11C H01L G06F

Files withUNIV BEIJING41 HUANG RU35 CAI YIMAO10 HANG ZHOU NANO CORE CHIP ELECTRONIC TECH CO LTD4 AN XIA2

Top patents by PatentIndex Score

102 records

0191US9136178B2Method for fabricating a finFET in a large scale integrated circuitLI MING·Filed 2012·Granted Sep 15, 2015·14 cites·20 claims
0290US9018968B2Method for testing density and location of gate dielectric layer trap of semiconductor deviceHUANG RU·Filed 2012·Granted Apr 28, 2015·17 cites·6 claims
0387US8995165B2Resistive memory cellCAI YIMAO·Filed 2012·Granted Mar 31, 2015·10 cites·18 claims
0484US8564031B2High voltage-resistant lateral double-diffused transistor based on nanowire deviceHUANG RU·Filed 2011·Granted Oct 22, 2013·9 cites·7 claims
0584US8513067B2Fabrication method for surrounding gate silicon nanowire transistor with air as spacersHUANG RU·Filed 2011·Granted Aug 20, 2013·10 cites·9 claims
0682US9502310B1Integration method for a vertical nanowire transistorUNIV BEIJING·Filed 2016·Granted Nov 22, 2016·4 cites·7 claims
0779US9379322B2Highly reliable nonvolatile memory and manufacturing method thereofUNIV BEIJING·Filed 2013·Granted Jun 28, 2016·5 cites·14 claims
0879US9281476B2Resistive memory and method for fabricating the sameUNIV BEIJING·Filed 2013·Granted Mar 8, 2016·5 cites·1 claims
0978US10621386B1Method of bias temperature instability calculation and prediction for MOSFET and FinFETCADENCE DESIGN SYSTEMS INC·Filed 2017·Granted Apr 14, 2020·5 cites·19 claims
1077US8673722B2Strained channel field effect transistor and the method for fabricating the sameHUANG RU·Filed 2011·Granted Mar 18, 2014·6 cites·5 claims
1176US8865543B2Ge-based NMOS device and method for fabricating the sameHUANG RU·Filed 2012·Granted Oct 21, 2014·4 cites·9 claims
1276US8372752B1Method for fabricating ultra-fine nanowireUNIV BEIJING·Filed 2012·Granted Feb 12, 2013·5 cites·6 claims
1374US11686326B2Ceiling fan and mounting base of ceiling fanFOSHAN CARRO ELEC CO LTD·Filed 2022·Granted Jun 27, 2023·1 cites·13 claims
1473US8598636B2Heat dissipation structure of SOI field effect transistorHUANG RU·Filed 2011·Granted Dec 3, 2013·5 cites·10 claims
1572US9171944B2Self-adaptive composite tunneling field effect transistor and method for fabricating the sameUNIV BEIJING·Filed 2013·Granted Oct 27, 2015·3 cites·9 claims
1671US8288238B2Method for fabricating a tunneling field-effect transistorHUANG RU·Filed 2010·Granted Oct 16, 2012·5 cites·10 claims
1769US8507959B2Combined-source MOS transistor with comb-shaped gate, and method for manufacturing the sameHUANG RU·Filed 2011·Granted Aug 13, 2013·3 cites·10 claims
1868US8563370B2Method for fabricating surrounding-gate silicon nanowire transistor with air sidewallsHUANG RU·Filed 2011·Granted Oct 22, 2013·3 cites·9 claims
1967US9508852B2Radiation-hardened-by-design (RHBD) multi-gate deviceUNIV BEIJING·Filed 2013·Granted Nov 29, 2016·3 cites·6 claims
2067US9478641B2Method for fabricating FinFET with separated double gates on bulk siliconUNIV BEIJING·Filed 2012·Granted Oct 25, 2016·2 cites·4 claims
2167US9142768B2Resistive memory with small electrode and method for fabricating the sameCAI YIMAO·Filed 2012·Granted Sep 22, 2015·2 cites·20 claims
2267US8921174B2Method for fabricating complementary tunneling field effect transistor based on standard CMOS IC processHUANG RU·Filed 2012·Granted Dec 30, 2014·3 cites·6 claims
2365US9123982B2Directional coupler integrated by CMOS processYE LE·Filed 2012·Granted Sep 1, 2015·4 cites·20 claims
2465US9086448B2Method for predicting reliable lifetime of SOI mosfet deviceHUANG RU·Filed 2011·Granted Jul 21, 2015·2 cites·5 claims
2563US8710557B2MOS transistor having combined-source structure with low power consumption and method for fabricating the sameHUANG RU·Filed 2011·Granted Apr 29, 2014·2 cites·6 claims
2663US8513639B2Resistive-switching memory and fabrication method thereofCAI YIMAO·Filed 2011·Granted Aug 20, 2013·1 cites·10 claims
2762US8901644B2Field effect transistor with a vertical channel and fabrication method thereofHUANG RU·Filed 2011·Granted Dec 2, 2014·2 cites·7 claims
2862US8632691B2Interface treatment method for germanium-based deviceHUANG RU·Filed 2012·Granted Jan 21, 2014·1 cites·5 claims
2961US9054075B2Strip-shaped gate tunneling field effect transistor with double-diffusion and a preparation method thereofUNIV BEIJING·Filed 2013·Granted Jun 9, 2015·1 cites·10 claims
3061US8541847B2Semiconductor device and method for fabricating the sameAN XIA·Filed 2010·Granted Sep 24, 2013·2 cites·11 claims
3159US8866507B2Method for testing trap density of gate dielectric layer in semiconductor device having no substrate contactHUANG RU·Filed 2011·Granted Oct 21, 2014·1 cites·7 claims
3258US8450155B2Method for introducing channel stress and field effect transistor fabricated by the sameHUANG RU·Filed 2011·Granted May 28, 2013·1 cites·4 claims
3358US2025191617A1Three-dimensional memory array and preparation method thereofUNIV BEIJING·Filed 2024·Application pending·0 cites
3456US11876373B2Power-aware method, power-aware system and converterHANG ZHOU NANO CORE CHIP ELECTRONIC TECH CO LTD·Filed 2022·Granted Jan 16, 2024·0 cites·11 claims
3556US9034702B2Method for fabricating silicon nanowire field effect transistor based on wet etchingHUANG RU·Filed 2011·Granted May 19, 2015·1 cites·8 claims
3656US8592276B2Fabrication method of vertical silicon nanowire field effect transistorHUANG RU·Filed 2011·Granted Nov 26, 2013·1 cites·9 claims
3755US11796349B2Capacitive sensor chip based on power-aware dynamic charge-domain amplifier arrayHANG ZHOU NANO CORE CHIP ELECTRONIC TECH CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·9 claims
3853US11868868B2Method for implementing adaptive stochastic spiking neuron based on ferroelectric field effect transistorUNIV BEIJING·Filed 2020·Granted Jan 9, 2024·0 cites·5 claims
3952US2025362879A1Method and apparatus for adjusting probability of random bit stream, and computer storage mediumUNIV BEIJING·Filed 2023·Application pending·0 cites
4052US2025148049A1Full-analog vector matrix multiplication processing-in-memory circuit and operation method thereof, computer device, and computer-readable storage mediumUNIV BEIJING·Filed 2023·Application pending·0 cites
4151US11973510B2Capacitance-to-digital conversion circuit, a capacitance-to-digital conversion method and an electronic chipHANG ZHOU NANO CORE CHIP ELECTRONIC TECH CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·10 claims
4251US8633465B2Multilevel resistive memory having large storage capacityHUANG RU·Filed 2012·Granted Jan 21, 2014·1 cites·20 claims
4351US2024273274A1Method for establishing transistor statistical model based on artificial neural network systemUNIV PEKING SHENZHEN GRADUATE SCHOOL·Filed 2024·Application pending·0 cites
4451US2022351017A1Circuit for extracting features, neural network and signal processing systemHANG ZHOU NANO CORE CHIP ELECTRONIC TECH CO LTD·Filed 2022·Application pending·0 cites
4548US9525133B2Resistive random access memory with high uniformity and low power consumption and method for fabricating the sameUNIV BEIJING·Filed 2014·Granted Dec 20, 2016·0 cites·10 claims
4648US9484208B2Preparation method of a germanium-based schottky junctionUNIV BEIJING·Filed 2013·Granted Nov 1, 2016·0 cites·8 claims
4748US2025157944A1Multi-gate total ionizing dose (tid) radiation-hardened deviceUNIV BEIJING·Filed 2025·Application pending·0 cites
4847US2024339138A1Compute-in-memory circuit and control method thereofUNIV BEIJING·Filed 2024·Application pending·0 cites
4946US12443783B2Logic circuit design methodHANGZHOU WEIMING XINKE TECH CO LTD·Filed 2020·Granted Oct 14, 2025·0 cites·9 claims
5046US9396949B2Method of adjusting a threshold voltage of a multi-gate structure deviceUNIV BEIJING·Filed 2013·Granted Jul 19, 2016·0 cites·5 claims

Showing the top 50 of 102 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →