Inventor · disambiguated record
Ru-Liang Lee
Also filed as: LEE RU-LIANG · LEE RU-LIANG JULIAN
72 granted patents·16 pending applications·253 citations·filing 1998–2025
98Inventor score
Top patents by PatentIndex Score
88 records- 0196US10134945B1Wafer to wafer bonding techniques for III-V wafers and CMOS wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·18 cites·20 claims
- 0296US9490158B2Bond chuck, methods of bonding, and tool including bond chuckTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 8, 2016·15 cites·20 claims
- 0396US9431609B2Oxide film scheme for RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 30, 2016·30 cites·20 claims
- 0495US9178144B1RRAM cell with bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 3, 2015·25 cites·20 claims
- 0594US11916022B2Photolithography alignment process for bonded wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
- 0694US11735624B2Multi-lateral recessed MIM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
- 0794US9893120B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·9 cites·20 claims
- 0894US9738516B2Structure to reduce backside silicon damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 22, 2017·9 cites·20 claims
- 0994US9576827B2Apparatus and method for wafer level bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·15 cites·20 claims
- 1094US9577191B2RRAM cell bottom electrode formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·11 cites·20 claims
- 1193US10569520B2Wafer debonding system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 25, 2020·7 cites·20 claims
- 1292US9368610B2High electron mobility transistor with indium nitride layerTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·6 cites·20 claims
- 1391US9620372B2HK embodied flash memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·6 cites·20 claims
- 1491US2025359336A1Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1590US10155369B2Wafer debonding system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·5 cites·7 claims
- 1690US9136393B2HK embodied flash memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 15, 2015·8 cites·20 claims
- 1788US12471379B2Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 1888US10889097B2Wafer debonding system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 12, 2021·3 cites·20 claims
- 1988US10304903B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·4 cites·20 claims
- 2088US9754813B2Bond chuck, methods of bonding, and tool including bond chuckTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·5 cites·20 claims
- 2187US10138118B2Structure to reduce backside silicon damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·3 cites·20 claims
- 2287US9105759B2Capacitive device and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 11, 2015·7 cites·20 claims
- 2387US2025364315A1Multilayer isolation structure for high voltage silicon-on-insulator deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2485US11329148B2Semiconductor device having doped seed layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 10, 2022·2 cites·20 claims
- 2585US9905751B2Magnetic tunnel junction with reduced damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 27, 2018·3 cites·20 claims
- 2683US10049901B2Apparatus and method for wafer level bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·3 cites·20 claims
- 2783US9595521B2Capacitive deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 14, 2017·3 cites·20 claims
- 2883US9450057B2Split gate cells for embedded flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·6 cites·20 claims
- 2982US12230585B2Photolithography alignment process for bonded wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 18, 2025·0 cites·20 claims
- 3081US12113071B2Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 3181US9159842B1Embedded nonvolatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 13, 2015·3 cites·20 claims
- 3280US2024021719A1Semiconductor device having doped seed layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3380US2025357431A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3479US12369352B2Thin film transfer using substrate with etch stop layer and diffusion barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 3579US2024379792A1Thin film transfer using substrate with etch stop layer and diffusion barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3678US2024347377A1Fabrication method of metal-free soi waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3776US11167982B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 9, 2021·0 cites·20 claims
- 3876US10483386B2Semiconductor device, transistor having doped seed layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 19, 2019·2 cites·20 claims
- 3975US10991758B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·1 cites·20 claims
- 4075US9944516B2High aspect ratio etch without upper wideningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 17, 2018·2 cites·20 claims
- 4174US12040221B2Fabrication method of metal-free SOI waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 4274US11532642B2Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 4374US2025118710A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4474US2024371685A1Cleaning chamber for metal oxide removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4573US11721752B2Semiconductor device having doped seed layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 4673US9099324B2Semiconductor device with trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 4, 2015·2 cites·20 claims
- 4773US6193836B1Center gas feed apparatus for a high density plasma reactorAPPLIED MATERIALS INC·Filed 2000·Granted Feb 27, 2001·9 cites·13 claims
- 4872US11682578B2Multilayer isolation structure for high voltage silicon-on-insulator deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 4972US10683204B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 16, 2020·0 cites·20 claims
- 5072US10453932B2Semiconductor structure for flash memory cells and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 22, 2019·1 cites·20 claims
Showing the top 50 of 88 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →