Inventor · disambiguated record

Ru-Ying Tong

Also filed as: TONG RU-YING

188 granted patents·10 pending applications·3,391 citations·filing 1999–2025

99Inventor score

Technology areasH10N H01F G11B G01R G11C

Files withHEADWAY TECHNOLOGIES INC71 TAIWAN SEMICONDUCTOR MFG CO LTD48 HEADWAY TECH INC21 MAGIC TECHNOLOGIES INC16 HORNG CHENG T13

Top patents by PatentIndex Score

198 records

0199US9490054B2Seed layer for multilayer magnetic materialsHEADWAY TECH INC·Filed 2012·Granted Nov 8, 2016·53 cites·13 claims
0299US9006704B2Magnetic element with improved out-of-plane anisotropy for spintronic applicationsJAN GUENOLE·Filed 2011·Granted Apr 14, 2015·61 cites·21 claims
0399US8987849B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2014·Granted Mar 24, 2015·35 cites·6 claims
0499US8860156B2Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAMBEACH ROBERT·Filed 2012·Granted Oct 14, 2014·88 cites·13 claims
0599US8852760B2Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layerWANG YU-JEN·Filed 2012·Granted Oct 7, 2014·97 cites·17 claims
0699US8823118B2Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layerHORNG CHENG T·Filed 2012·Granted Sep 2, 2014·86 cites·12 claims
0799US8749003B2High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the sameMAGIC TECHNOLOGIES INC·Filed 2013·Granted Jun 10, 2014·51 cites·7 claims
0899US8592927B2Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applicationsJAN GUENOLE·Filed 2011·Granted Nov 26, 2013·81 cites·21 claims
0999US8470462B2Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctionsHORNG CHENG T·Filed 2010·Granted Jun 25, 2013·71 cites·12 claims
1098US11417835B2Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·5 cites·20 claims
1198US10014465B1Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyHEADWAY TECH INC·Filed 2017·Granted Jul 3, 2018·22 cites·13 claims
1298US9966529B1MgO insertion into free layer for magnetic memory applicationsHEADWAY TECH INC·Filed 2017·Granted May 8, 2018·19 cites·13 claims
1398US9780299B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2015·Granted Oct 3, 2017·11 cites·19 claims
1498US9472752B2High thermal stability reference structure with out-of-plane anisotropy for magnetic device applicationsHEADWAY TECH INC·Filed 2014·Granted Oct 18, 2016·30 cites·10 claims
1598US9466789B2Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applicationsHEADWAY TECH INC·Filed 2014·Granted Oct 11, 2016·53 cites·19 claims
1698US9373780B2Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Jun 21, 2016·19 cites·7 claims
1798US8981505B2Mg discontinuous insertion layer for improving MTJ shuntHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Mar 17, 2015·48 cites·17 claims
1898US8541855B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsJAN GUENOLE·Filed 2011·Granted Sep 24, 2013·45 cites·14 claims
1998US8138561B2Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAMHORNG CHENG T·Filed 2008·Granted Mar 20, 2012·58 cites·10 claims
2098US8080432B2High performance MTJ element for STT-RAM and method for making the sameHORNG CHENG T·Filed 2010·Granted Dec 20, 2011·48 cites·14 claims
2198US7750421B2High performance MTJ element for STT-RAM and method for making the sameMAGIC TECHNOLOGIES INC·Filed 2007·Granted Jul 6, 2010·100 cites·7 claims
2298US7595520B2Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the sameMAGIC TECHNOLOGIES INC·Filed 2006·Granted Sep 29, 2009·70 cites·14 claims
2398US7479394B2MgO/NiFe MTJ for high performance MRAM applicationMAGIC TECHNOLOGIES INC·Filed 2005·Granted Jan 20, 2009·46 cites·23 claims
2497US10957851B2Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·6 cites·20 claims
2597US10797225B2Dual magnetic tunnel junction (DMTJ) stack designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·10 cites·33 claims
2697US10522752B1Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·10 cites·22 claims
2797US8871365B2High thermal stability reference structure with out-of-plane aniotropy to magnetic device applicationsWANG YU-JEN·Filed 2012·Granted Oct 28, 2014·33 cites·19 claims
2897US8508006B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsJAN GUENOLE·Filed 2012·Granted Aug 13, 2013·28 cites·13 claims
2997US8184411B2MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM applicationZHANG KUNLIANG·Filed 2009·Granted May 22, 2012·48 cites·29 claims
3097US7948044B2Low switching current MTJ element for ultra-high STT-RAM and a method for making the sameMAGIC TECHNOLOGIES INC·Filed 2008·Granted May 24, 2011·104 cites·16 claims
3197US7598579B2Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching currentMAGIC TECHNOLOGIES INC·Filed 2007·Granted Oct 6, 2009·44 cites·7 claims
3297US7449345B2Capping structure for enhancing dR/R of the MTJ deviceHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Nov 11, 2008·144 cites·15 claims
3397US6466418B1Bottom spin valves with continuous spacer exchange (or hard) biasHEADWAY TECHNOLOGIES INC·Filed 2000·Granted Oct 15, 2002·114 cites·37 claims
3496US10665773B2Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·7 cites·20 claims
3596US10193062B2MgO insertion into free layer for magnetic memory applicationsHEADWAY TECH INC·Filed 2018·Granted Jan 29, 2019·7 cites·37 claims
3696US8057925B2Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the sameHORNG CHENG T·Filed 2008·Granted Nov 15, 2011·30 cites·11 claims
3796US7480173B2Spin transfer MRAM device with novel magnetic free layerMAGIC TECHNOLOGIES INC·Filed 2007·Granted Jan 20, 2009·76 cites·27 claims
3896US7390529B2Free layer for CPP GMR having iron rich NiFeHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Jun 24, 2008·67 cites·19 claims
3996US7331100B2Process of manufacturing a seed/AFM combination for a CPP GMR deviceHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Feb 19, 2008·57 cites·17 claims
4095US10868235B2Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·4 cites·20 claims
4195US9935261B1Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputteringHEADWAY TECH INC·Filed 2017·Granted Apr 3, 2018·14 cites·24 claims
4295US9673385B1Seed layer for growth of <111> magnetic materialsHEADWAY TECH INC·Filed 2016·Granted Jun 6, 2017·7 cites·25 claims
4395US9147833B2Hybridized oxide capping layer for perpendicular magnetic anisotropyHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Sep 29, 2015·18 cites·24 claims
4495US9048411B2Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applicationsJAN GUENOLE·Filed 2013·Granted Jun 2, 2015·22 cites·11 claims
4595US8921961B2Storage element for STT MRAM applicationsKULA WITOLD·Filed 2012·Granted Dec 30, 2014·26 cites·20 claims
4695US8609262B2Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM applicationHORNG CHENG T·Filed 2009·Granted Dec 17, 2013·33 cites·16 claims
4795US7528457B2Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/RMAGIC TECHNOLOGIES INC·Filed 2006·Granted May 5, 2009·38 cites·13 claims
4895US6292336B1Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficientHEADWAY TECHNOLOGIES INC·Filed 1999·Granted Sep 18, 2001·116 cites·20 claims
4994US10658577B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·3 cites·20 claims
5094US10516100B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·8 cites·20 claims

Showing the top 50 of 198 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →