Inventor · disambiguated record
Ryan Meyer
Also filed as: MEYER RYAN · MEYER RYAN L
13 granted patents·2 pending applications·99 citations·filing 2016–2024
89Inventor score
Top patents by PatentIndex Score
15 records- 0198US10014309B2Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistorMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 3, 2018·34 cites·26 claims
- 0296US10388665B1Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stackMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 20, 2019·46 cites·22 claims
- 0395US10263007B2Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistorMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 16, 2019·11 cites·18 claims
- 0489US11094627B2Methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 17, 2021·4 cites·20 claims
- 0588US11563011B2Integrated circuitry, memory circuitry, method used in forming integrated circuitry, and method used in forming memory circuitryMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 24, 2023·2 cites·28 claims
- 0679US10157933B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2016·Granted Dec 18, 2018·2 cites·29 claims
- 0778US2024321727A1Memory arrays comprising operative channel-material strings and dummy pillarsLODESTAR LICENSING GROUP LLC·Filed 2024·Application pending·0 cites
- 0875US11937429B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 19, 2024·0 cites·18 claims
- 0970US11239252B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 1, 2022·0 cites·6 claims
- 1066US2021343640A1Memory Arrays Comprising Operative Channel-Material Strings And Dummy PillarsMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 1165US11792991B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 1262US10727242B2Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistorMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 28, 2020·0 cites·17 claims
- 1360US10720446B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 21, 2020·0 cites·15 claims
- 1457US10586807B2Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacksMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 10, 2020·0 cites·14 claims
- 1555US11244955B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 8, 2022·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →