Inventor · disambiguated record
Sarah Atanasov
Also filed as: ATANASOV SARAH · ATANASOV SARAH E
11 granted patents·22 pending applications·6 citations·filing 2016–2024
81Inventor score
Top patents by PatentIndex Score
33 records- 0194US12148734B2Transistors, memory cells, and arrangements thereofINTEL CORP·Filed 2020·Granted Nov 19, 2024·3 cites·20 claims
- 0281US11955560B2Passivation layers for thin film transistors and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 9, 2024·1 cites·20 claims
- 0379US12376342B2Passivation layers for thin film transistorsINTEL CORP·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 0477US11251186B2Compute near memory with backend memoryINTEL CORP·Filed 2020·Granted Feb 15, 2022·1 cites·19 claims
- 0572US11699747B2Quantum dot devices with multiple layers of gate metalINTEL CORP·Filed 2019·Granted Jul 11, 2023·1 cites·19 claims
- 0670US11812599B2Compute near memory with backend memoryINTEL CORP·Filed 2022·Granted Nov 7, 2023·0 cites·18 claims
- 0763US2025393189A1Capacitors with amorphous oxide layer for high capacitance and low leakageINTEL CORP·Filed 2024·Application pending·0 cites
- 0857US2025220932A1Defect self-compensation materials for high endurance (anti-)ferroelectric capacitors with hafnium oxide based material systemsINTEL CORP·Filed 2023·Application pending·0 cites
- 0957US2025273557A1Laser debond process for fabrication of high-density organic interposersINTEL CORP·Filed 2024·Application pending·0 cites
- 1056US2025220921A1Enhancing device performance by mitigation of oxygen migration in hafnium oxide based material systemsINTEL CORP·Filed 2023·Application pending·0 cites
- 1155US12080781B2Fabrication of thin film fin transistor structureINTEL CORP·Filed 2020·Granted Sep 3, 2024·0 cites·15 claims
- 1255US2025006433A1Thin hafnium-zirconium oxide films having large grain size for ferroelectric capacitorsINTEL CORP·Filed 2023·Application pending·0 cites
- 1355US2024114695A1High endurance super-lattice anti-ferroelectric capacitorsINTEL CORP·Filed 2022·Application pending·0 cites
- 1453US12150297B2Thin film transistors having a backside channel contact for high density memoryINTEL CORP·Filed 2020·Granted Nov 19, 2024·0 cites·20 claims
- 1553US11664305B2Staggered lines for interconnect performance improvement and processes for forming suchINTEL CORP·Filed 2019·Granted May 30, 2023·0 cites·20 claims
- 1653US2024204103A1Transistor gate-channel arrangements with multiple dipole materialsINTEL CORP·Filed 2022·Application pending·0 cites
- 1752US2024112714A1Selective ferroelectric deployment for single-transistor, multiple-capacitor devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 1850US11682701B2Quantum dot devicesINTEL CORP·Filed 2019·Granted Jun 20, 2023·0 cites·22 claims
- 1950US2023100952A1High-k or ferroelectric gate oxide with zero-sio2 il process for transistorINTEL CORP·Filed 2021·Application pending·0 cites
- 2049US2023111323A1Oxide layer doping on a sub channel of a transistor structureINTEL CORP·Filed 2021·Application pending·0 cites
- 2149US2023100860A1Memory devices with reduced read disturbance effectsINTEL CORP·Filed 2021·Application pending·0 cites
- 2248US2023093064A1Thin-film transistors with shared contactsSHARMA ABHISHEK A·Filed 2021·Application pending·0 cites
- 2348US2023097184A1Integrated circuits with high dielectric constant interfacial layeringINTEL CORP·Filed 2021·Application pending·0 cites
- 2448US2023197728A1Stacked transistor structures with diverse gate materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 2548US2023092244A1Three-dimensional transistor with fin-shaped gateINTEL CORP·Filed 2021·Application pending·0 cites
- 2647US11189790B2Spacer-based patterning for tight-pitch and low-variability random access memory (RAM) bit cells and the resulting structuresINTEL CORP·Filed 2016·Granted Nov 30, 2021·0 cites·25 claims
- 2747US2022102268A1Damascene interconnect structures with low resistance vias for integrated circuitsINTEL CORP·Filed 2020·Application pending·0 cites
- 2847US2023097736A1Ferroelectric random access memory (fram) devices with enhanced capacitor architectureINTEL CORP·Filed 2021·Application pending·0 cites
- 2947US2023099540A1Elimination of sub-fin leakage in stacked nanosheet architecturesINTEL CORP·Filed 2021·Application pending·0 cites
- 3046US2023101111A1Three-dimensional ferroelectric random access memory (3d fram) with improved scalingINTEL CORP·Filed 2021·Application pending·0 cites
- 3146US2022189957A1Transistors, memory cells, and arrangements thereofINTEL CORP·Filed 2020·Application pending·0 cites
- 3246US2022190121A1Transistor channel materialsINTEL CORP·Filed 2020·Application pending·0 cites
- 3345US2024112731A1Memory array comprising a ferroelectric data storage elementINTEL CORP·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →