Inventor · disambiguated record
Sansaptak Dasgupta
Also filed as: DASGUPTA SANSAPTAK · DASGUPTA SANSAPTAK W
216 granted patents·32 pending applications·467 citations·filing 2012–2024
99Inventor score
Top patents by PatentIndex Score
248 records- 0197US10431717B1Light-emitting diode (LED) and micro LED substrates and methods for making the sameINTEL CORP·Filed 2018·Granted Oct 1, 2019·17 cites·17 claims
- 0297US8765563B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2012·Granted Jul 1, 2014·42 cites·9 claims
- 0396US8768271B1Group III-N transistors on nanoscale template structuresTHEN HAN WUI·Filed 2012·Granted Jul 1, 2014·16 cites·18 claims
- 0495US10720505B2Ferroelectric-based field-effect transistor with threshold voltage switching for enhanced on-state and off-state performanceINTEL CORP·Filed 2016·Granted Jul 21, 2020·10 cites·19 claims
- 0595US9660064B2Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stackINTEL CORP·Filed 2013·Granted May 23, 2017·15 cites·26 claims
- 0695US9634007B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2014·Granted Apr 25, 2017·16 cites·5 claims
- 0794US9806203B2Nonplanar III-N transistors with compositionally graded semiconductor channelsINTEL CORP·Filed 2016·Granted Oct 31, 2017·7 cites·36 claims
- 0894US8896101B2Nonplanar III-N transistors with compositionally graded semiconductor channelsTHEN HAN WUI·Filed 2012·Granted Nov 25, 2014·14 cites·19 claims
- 0993US10658471B2Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layersINTEL CORP·Filed 2015·Granted May 19, 2020·8 cites·18 claims
- 1093US10096683B2Group III-N transistor on nanoscale template structuresINTEL CORP·Filed 2017·Granted Oct 9, 2018·5 cites·20 claims
- 1193US10056456B2N-channel gallium nitride transistorsINTEL CORP·Filed 2014·Granted Aug 21, 2018·8 cites·25 claims
- 1293US9570614B2Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxationINTEL CORP·Filed 2013·Granted Feb 14, 2017·14 cites·8 claims
- 1392US11233053B2Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabricationINTEL CORP·Filed 2017·Granted Jan 25, 2022·6 cites·20 claims
- 1492US9716149B2Group III-N transistors on nanoscale template structuresINTEL CORP·Filed 2016·Granted Jul 25, 2017·5 cites·20 claims
- 1592US9029835B2Epitaxial film on nanoscale structureINTEL CORP·Filed 2012·Granted May 12, 2015·13 cites·19 claims
- 1691US11387328B2III-N tunnel device architectures and high frequency mixers employing a III-N tunnel deviceINTEL CORP·Filed 2018·Granted Jul 12, 2022·6 cites·20 claims
- 1791US10325774B2Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devicesINTEL CORP·Filed 2014·Granted Jun 18, 2019·8 cites·16 claims
- 1891US8785907B2Epitaxial film growth on patterned substrateGOEL NITI·Filed 2012·Granted Jul 22, 2014·13 cites·24 claims
- 1990US10665708B2Semiconductor devices with raised doped crystalline structuresINTEL CORP·Filed 2019·Granted May 26, 2020·4 cites·14 claims
- 2090US10347834B2Wafer-scale integration of vacancy centers for spin qubitsINTEL CORP·Filed 2018·Granted Jul 9, 2019·5 cites·35 claims
- 2190US9590069B2Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operationINTEL CORP·Filed 2015·Granted Mar 7, 2017·5 cites·13 claims
- 2290US8872225B2Defect transferred and lattice mismatched epitaxial filmINTEL CORP·Filed 2012·Granted Oct 28, 2014·12 cites·25 claims
- 2389US11295992B2Tunnel polarization junction III-N transistorsINTEL CORP·Filed 2017·Granted Apr 5, 2022·4 cites·20 claims
- 2489US11183613B2Group III-nitride light emitting devices including a polarization junctionINTEL CORP·Filed 2017·Granted Nov 23, 2021·2 cites·19 claims
- 2589US10032911B2Wide band gap transistor on non-native semiconductor substrateINTEL CORP·Filed 2017·Granted Jul 24, 2018·5 cites·16 claims
- 2689US8954021B2Group III-N transistors on nanoscale template structuresTHEN HAN WUI·Filed 2014·Granted Feb 10, 2015·5 cites·11 claims
- 2788US11043627B2Techniques for monolithic co-integration of thin-film bulk acoustic resonator devices and III-N semiconductor transistor devicesINTEL CORP·Filed 2016·Granted Jun 22, 2021·5 cites·20 claims
- 2888US10692839B2GaN devices on engineered silicon substratesINTEL CORP·Filed 2015·Granted Jun 23, 2020·5 cites·16 claims
- 2988US10229991B2III-N epitaxial device structures on free standing silicon mesasINTEL CORP·Filed 2014·Granted Mar 12, 2019·6 cites·25 claims
- 3088US9847448B2Forming LED structures on silicon finsINTEL CORP·Filed 2013·Granted Dec 19, 2017·8 cites·30 claims
- 3188US9391181B2Lattice mismatched hetero-epitaxial filmINTEL CORP·Filed 2012·Granted Jul 12, 2016·10 cites·14 claims
- 3288US9362369B2Group III-N transistors on nanoscale template structuresINTEL CORP·Filed 2015·Granted Jun 7, 2016·3 cites·10 claims
- 3387US10930500B2Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devicesINTEL CORP·Filed 2019·Granted Feb 23, 2021·3 cites·18 claims
- 3487US9373693B2Nonplanar III-N transistors with compositionally graded semiconductor channelsINTEL CORP·Filed 2014·Granted Jun 21, 2016·5 cites·6 claims
- 3586US10497785B2Gallium nitride voltage regulatorINTEL CORP·Filed 2016·Granted Dec 3, 2019·4 cites·25 claims
- 3686US10411067B2Integrated RF frontend structuresINTEL CORP·Filed 2015·Granted Sep 10, 2019·4 cites·20 claims
- 3786US10170612B2Epitaxial buffer layers for group III-N transistors on silicon substratesINTEL CORP·Filed 2017·Granted Jan 1, 2019·4 cites·30 claims
- 3886US9923087B2Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operationINTEL CORP·Filed 2017·Granted Mar 20, 2018·3 cites·19 claims
- 3985US11328992B2Integrated circuit components with dummy structuresINTEL CORP·Filed 2017·Granted May 10, 2022·4 cites·17 claims
- 4085US10700665B2Film bulk acoustic resonator (FBAR) devices for high frequency RF filtersINTEL CORP·Filed 2015·Granted Jun 30, 2020·4 cites·20 claims
- 4185US2025079292A1Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitancesTAHOE RES LTD·Filed 2024·Application pending·0 cites
- 4284US10134727B2High breakdown voltage III-N depletion mode MOS capacitorsINTEL CORP·Filed 2015·Granted Nov 20, 2018·4 cites·23 claims
- 4383US11437504B2Complementary group III-nitride transistors with complementary polarization junctionsINTEL CORP·Filed 2017·Granted Sep 6, 2022·3 cites·20 claims
- 4483US9660085B2Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereofINTEL CORP·Filed 2013·Granted May 23, 2017·6 cites·16 claims
- 4582US11430873B2Self aligned gate connected plates for group III-Nitride devices and methods of fabricationINTEL CORP·Filed 2018·Granted Aug 30, 2022·3 cites·20 claims
- 4682US9698013B2Methods and structures to prevent sidewall defects during selective epitaxyINTEL CORP·Filed 2013·Granted Jul 4, 2017·5 cites·20 claims
- 4782US9583574B2Epitaxial buffer layers for group III-N transistors on silicon substratesDASGUPTA SANSAPTAK·Filed 2012·Granted Feb 28, 2017·6 cites·12 claims
- 4882US9064709B2High breakdown voltage III-N depletion mode MOS capacitorsTHEN HAN WUI·Filed 2012·Granted Jun 23, 2015·6 cites·25 claims
- 4981US12148690B2Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitancesTAHOE RES LTD·Filed 2023·Granted Nov 19, 2024·0 cites·6 claims
- 5081US11380679B2FET capacitor circuit architectures for tunable load and input matchingINTEL CORP·Filed 2018·Granted Jul 5, 2022·3 cites·17 claims
Showing the top 50 of 248 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →