Inventor · disambiguated record
Sang-Gu Kang
Also filed as: KANG SANG GU
33 granted patents·3 pending applications·356 citations·filing 2001–2015
97Inventor score
Top patents by PatentIndex Score
36 records- 0199US7518920B2Flash memory device including a dummy cellSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 14, 2009·67 cites·8 claims
- 0294US7548457B2Multi-bit nonvolatile memory device and related programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 16, 2009·33 cites·34 claims
- 0393US7652926B2Nonvolatile semiconductor memory device including a cell string with dummy cellsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 26, 2010·32 cites·16 claims
- 0492US8358544B2Flash memory device having dummy cellSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jan 22, 2013·12 cites·9 claims
- 0591US8054692B2Flash memory device reducing noise of common source line, program verify method thereof, and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 8, 2011·27 cites·20 claims
- 0690US7746719B2Multi-chip package reducing power-up peak currentSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 29, 2010·20 cites·19 claims
- 0789US7561467B2Flash memory device using program data cache and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·22 cites·23 claims
- 0887US8120967B2Semiconductor memory device and related method of programmingKANG SANG GU·Filed 2010·Granted Feb 21, 2012·8 cites·16 claims
- 0986US8023323B2Non-volatile memory device having monitoring memory cell and related method of driving using variable read voltageSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 20, 2011·17 cites·30 claims
- 1083US8243530B2Non-volatile memory deviceKANG SANG-GU·Filed 2010·Granted Aug 14, 2012·9 cites·7 claims
- 1181US8493784B2Semiconductor memory device and related method of programmingKANG SANG GU·Filed 2012·Granted Jul 23, 2013·5 cites·18 claims
- 1278US8395943B2Flash memory device and set-up data initialization methodKANG SANG-GU·Filed 2011·Granted Mar 12, 2013·5 cites·20 claims
- 1377US7965557B2Flash memory device and set-up data initialization methodSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 21, 2011·8 cites·20 claims
- 1477US7539063B2Flash memory devices and programming methods for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 26, 2009·10 cites·31 claims
- 1576US8068361B2Systems and methods for performing a program-verify process on a nonvolatile memory by selectively pre-charging bit lines associated with memory cells during the verify operationsKANG SANG-GU·Filed 2009·Granted Nov 29, 2011·9 cites·18 claims
- 1676US7688640B2Flash memory device and method for driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 30, 2010·9 cites·25 claims
- 1772USRE46238ESemiconductor memory device and related method of programmingSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 13, 2016·2 cites·46 claims
- 1869US8520434B2Method of storing E-fuse data in flash memory deviceKANG SANG-GU·Filed 2011·Granted Aug 27, 2013·3 cites·25 claims
- 1969US7978522B2Flash memory device including a dummy cellSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·6 cites·20 claims
- 2068US8154929B2Flash memory device controlling common source line voltage, program-verify method, and memory systemKANG SANG-GU·Filed 2009·Granted Apr 10, 2012·6 cites·16 claims
- 2167US7826269B2Flash memory device and method for driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 2, 2010·6 cites·22 claims
- 2267US7734880B2Flash memory system compensating reduction in read margin between memory cell program statesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 8, 2010·6 cites·10 claims
- 2367US6528445B1Dielectric ceramic composition and method for manufacturing the sameHONG KUG SUN·Filed 2001·Granted Mar 4, 2003·10 cites·21 claims
- 2466US8179732B2Flash memory devices including ready/busy control circuits and methods of testing the sameKANG SANG-GU·Filed 2009·Granted May 15, 2012·5 cites·19 claims
- 2565US7335884B2Compensation circuit for compensating non-uniformity according to change of operating temperature of bolometerKOREA ADVANCED INST SCI & TECH·Filed 2006·Granted Feb 26, 2008·4 cites·8 claims
- 2661US8149620B2Flash memory device having dummy cellKANG SANG-GU·Filed 2009·Granted Apr 3, 2012·3 cites·10 claims
- 2761US7796441B2Method of reading configuration data in flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 14, 2010·4 cites·18 claims
- 2861US7362612B2Program method for flash memory capable of compensating for the reduction of read margin between statesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 22, 2008·4 cites·18 claims
- 2960US8279680B2Semiconductor memory device and related method of programmingKANG SANG GU·Filed 2012·Granted Oct 2, 2012·1 cites·12 claims
- 3058US8493087B2Probe card, and apparatus and method for testing semiconductor device using the probe cardCHO CHANG-HYUN·Filed 2009·Granted Jul 23, 2013·3 cites·20 claims
- 3143US8963091B2Signal detecting circuit of infrared sensor and method of correcting sameAGENCY DEFENSE DEV·Filed 2012·Granted Feb 24, 2015·0 cites·5 claims
- 3241US6579518B2Ceramic deodorizerHONG KUG SUN·Filed 2001·Granted Jun 17, 2003·0 cites·3 claims
- 3341US2008298128A1Method of storing e-fuse data in flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3440US2008297185A1Multi probe card unit, probe test device including the multi probe card unit, and methods of fabricating and using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3539US7701235B2Substrate test probing equipment having forcing part for test head and force-receiving pattern for probe card and methods of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 20, 2010·0 cites·26 claims
- 3635US2015226783A1Probe card and wafer test system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →