Inventor · disambiguated record
Sang-Seok Kang
Also filed as: KANG SANG-SEOK
63 granted patents·3 pending applications·552 citations·filing 1996–2023
99Inventor score
Top patents by PatentIndex Score
66 records- 0186US7649760B2Semiconductor memory device having dummy sense amplifiers and methods of utilizing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 19, 2010·15 cites·12 claims
- 0285US11837278B2DRAM device and ODT resistor value adjustment method and computer program for the sameKANG SANG SEOK·Filed 2022·Granted Dec 5, 2023·1 cites·9 claims
- 0385US6392938B1Semiconductor memory device and method of identifying programmed defective address thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 21, 2002·38 cites·20 claims
- 0484US6498526B2Fuse circuit and program status detecting method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 24, 2002·40 cites·21 claims
- 0583US5929696ACircuit for converting internal voltage of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 27, 1999·43 cites·12 claims
- 0682US8619484B2Semiconductor device, method of adjusting load capacitance for the same, and semiconductor system including the sameLIM JONG HYOUNG·Filed 2011·Granted Dec 31, 2013·9 cites·15 claims
- 0777US6346738B1Fuse option circuit of integrated circuit and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Feb 12, 2002·25 cites·13 claims
- 0876US7460428B2Dynamic random access memory and communications terminal including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 2, 2008·11 cites·21 claims
- 0975US12482517B2DRAM device and ODT resistor value adjustment method and computer program for the sameKANG SANG SEOK·Filed 2023·Granted Nov 25, 2025·0 cites·10 claims
- 1074US9672891B2Memory device, memory module including the memory device, method of fabricating the memory module, and method of repairing the memory moduleSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 6, 2017·3 cites·10 claims
- 1173US6898139B2Integrated circuit memory devices and operating methods that are configured to output data bits at a lower rate in a test mode of operationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 24, 2005·19 cites·32 claims
- 1272US7295488B2Apparatus and methods for generating a column select line signal in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 13, 2007·8 cites·24 claims
- 1372US7173872B2Method and apparatus for controlling a high voltage generator in a wafer burn-in testSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 6, 2007·7 cites·10 claims
- 1472US6658612B1Test signal generating circuit of a semiconductor device with pins receiving signals of multiple voltage levels and method for invoking test modesSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 2, 2003·17 cites·14 claims
- 1571US8102689B2Semiconductor memory device having dummy sense amplifiers and methods of utilizing the sameHONG MIN-KI·Filed 2010·Granted Jan 24, 2012·5 cites·9 claims
- 1671US7558993B2Test apparatus for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 7, 2009·8 cites·19 claims
- 1770US5867434AIntegrated circuit memory devices having dummy memory cells therein for inhibiting memory failuresSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Feb 2, 1999·31 cites·15 claims
- 1869US8228736B2Mobile system on chip (SoC) and mobile terminal using the mobile SoC, and method for refreshing a memory in the mobile SoCJOO JAE HOON·Filed 2009·Granted Jul 24, 2012·6 cites·17 claims
- 1969US6111457AInternal power supply circuit for use in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 29, 2000·26 cites·15 claims
- 2069US5914626AVoltage clamping circuit for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jun 22, 1999·30 cites·5 claims
- 2168US8477553B2Fuse circuit and semiconductor device having the sameKANG SANG-SEOK·Filed 2011·Granted Jul 2, 2013·2 cites·19 claims
- 2267US7057217B2Fuse arrangement and integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 6, 2006·14 cites·16 claims
- 2367US6490222B2Decoding circuit for controlling activation of wordlines in a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 3, 2002·15 cites·13 claims
- 2466US7391254B2Circuit and method of generating internal supply voltage in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·6 cites·20 claims
- 2566US7016248B2Method and apparatus for controlling a high voltage generator in a wafer burn-in testSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 21, 2006·12 cites·16 claims
- 2665US7675316B2Semiconductor memory device including on die termination circuit and on die termination method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 9, 2010·5 cites·20 claims
- 2764US6788132B2Voltage and time control circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 7, 2004·12 cites·10 claims
- 2863US8144539B2Semiconductor memory device for self refresh and memory system having the sameLIM JONG HYOUNG·Filed 2009·Granted Mar 27, 2012·5 cites·10 claims
- 2963US7624317B2Parallel bit test circuit and method for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 24, 2009·5 cites·14 claims
- 3062US9286956B2Memory device, memory module including the memory device, method of fabricating the memory module, and method of repairing the memory moduleSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 15, 2016·2 cites·11 claims
- 3162US6483373B1Input circuit having signature circuits in parallel in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 19, 2002·12 cites·30 claims
- 3261US9026870B2Memory module and a memory test system for testing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 5, 2015·2 cites·19 claims
- 3360US8441877B2Semiconductor memory devices including burn-in test circuitsCHOI JONG-HYUN·Filed 2010·Granted May 14, 2013·2 cites·20 claims
- 3460US8208317B2Semiconductor memory deviceKANG SANG-SEOK·Filed 2009·Granted Jun 26, 2012·4 cites·17 claims
- 3560US7466616B2Bit line sense amplifier and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 16, 2008·4 cites·16 claims
- 3658US6850450B2Fuse box including make-link and redundant address decoder having the same, and method for repairing defective memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 1, 2005·10 cites·15 claims
- 3757US7569904B2Semiconductor device having a plurality of temperature sensors and semiconductor device control method using the plurality of temperature sensorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 4, 2009·4 cites·6 claims
- 3856US6215723B1Semiconductor memory device having sequentially disabling activated word linesSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 10, 2001·9 cites·20 claims
- 3955US6861682B2Laser link structure capable of preventing an upper crack and broadening an energy window of a laser beam, and fuse box using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 1, 2005·7 cites·14 claims
- 4052US6438042B1Arrangement of bitline boosting capacitor in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 20, 2002·7 cites·24 claims
- 4150US6345011B2Input/output line structure of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 5, 2002·6 cites·3 claims
- 4249US8015459B2Semiconductor memory device and method of performing a memory operationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·1 cites·16 claims
- 4348US7657800B2Semiconductor memory device and method of performing a memory operationSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 2, 2010·1 cites·18 claims
- 4447US8411520B2Semiconductor memory device and method of reducing consumption of standby current thereinLEE MYUNG-JAE·Filed 2009·Granted Apr 2, 2013·2 cites·16 claims
- 4545US6972612B2Semiconductor device with malfunction control circuit and controlling method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 6, 2005·2 cites·6 claims
- 4645US6459636B2Mode selection circuit for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 1, 2002·4 cites·18 claims
- 4744US6751148B2Circuit for generating control signal using make-link type fuseSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 15, 2004·4 cites·11 claims
- 4844US5949724ABurn-in stress circuit for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 7, 1999·11 cites·14 claims
- 4941US7161407B2Fuse circuit with controlled fuse burn out and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 9, 2007·2 cites·19 claims
- 5041US6140704AIntegrated circuit memory devices with improved twisted bit-line structuresSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Oct 31, 2000·9 cites·18 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →