Inventor · disambiguated record
Sang In Lee
Also filed as: LEE SANG-IN
121 granted patents·56 pending applications·11,033 citations·filing 1991–2021
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD75VEECO ALD INC29LEE SANG IN28SYNOS TECHNOLOGY INC14NOVA ENG FILMS INC11
Top patents by PatentIndex Score
177 records- 0199US9163310B2Enhanced deposition of layer on substrate using radicalsLEE SANG IN·Filed 2012·Granted Oct 20, 2015·338 cites·19 claims
- 0299US8895108B2Method for forming thin film using radicals generated by plasmaLEE SANG IN·Filed 2012·Granted Nov 25, 2014·344 cites·20 claims
- 0399US8877300B2Atomic layer deposition using radicals of gas mixtureLEE SANG IN·Filed 2012·Granted Nov 4, 2014·338 cites·9 claims
- 0499US8758512B2Vapor deposition reactor and method for forming thin filmLEE SANG IN·Filed 2010·Granted Jun 24, 2014·347 cites·18 claims
- 0599US8697198B2Magnetic field assisted depositionLEE SANG IN·Filed 2012·Granted Apr 15, 2014·337 cites·8 claims
- 0699US8470718B2Vapor deposition reactor for forming thin filmLEE SANG IN·Filed 2009·Granted Jun 25, 2013·345 cites·14 claims
- 0799US6270572B1Method for manufacturing thin film using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Aug 7, 2001·1.1k cites·14 claims
- 0898US6478872B1Method of delivering gas into reaction chamber and shower head used to deliver gasSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 12, 2002·814 cites·13 claims
- 0998US6207487B1Method for forming dielectric film of capacitor having different thicknesses partlySAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Mar 27, 2001·426 cites·16 claims
- 1098US6174809B1Method for forming metal layer using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 16, 2001·1.2k cites·25 claims
- 1198US6144060AIntegrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperatureSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 7, 2000·457 cites·17 claims
- 1298US6139700AMethod of and apparatus for forming a metal interconnection in the contact hole of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Oct 31, 2000·410 cites·16 claims
- 1398US5998870AWiring structure of semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Dec 7, 1999·485 cites·33 claims
- 1497US8257799B2Method for forming thin film using radicals generated by plasmaLEE SANG IN·Filed 2010·Granted Sep 4, 2012·21 cites·18 claims
- 1597US6576053B1Method of forming thin film using atomic layer deposition methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 10, 2003·297 cites·32 claims
- 1697US6391769B1Method for forming metal interconnection in semiconductor device and interconnection structure fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 21, 2002·177 cites·21 claims
- 1797US6358829B2Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layerSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Mar 19, 2002·381 cites·25 claims
- 1897US6197683B1Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Mar 6, 2001·316 cites·17 claims
- 1996US8771791B2Deposition of layer using depositing apparatus with reciprocating susceptorLEE SANG IN·Filed 2011·Granted Jul 8, 2014·338 cites·8 claims
- 2096US7205247B2Atomic layer deposition of hafnium-based high-k dielectricAVIZA TECH INC·Filed 2004·Granted Apr 17, 2007·563 cites·13 claims
- 2196US6372598B2Method of forming selective metal layer and method of forming capacitor and filling contact hole using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 16, 2002·283 cites·32 claims
- 2293US9376455B2Molecular layer deposition using reduction processVEECO ALD INC·Filed 2014·Granted Jun 28, 2016·17 cites·13 claims
- 2392USD879128SComputer screen with menu displayROBORUS CO LTD·Filed 2018·Granted Mar 24, 2020·41 cites·1 claims
- 2492US8617652B2Depositing material on fibrous textiles using atomic layer deposition for increasing rigidity and strengthLEE SANG IN·Filed 2012·Granted Dec 31, 2013·4 cites·11 claims
- 2590US11091834B2Film deposition apparatus with gas entraining openingsNOVA ENG FILMS INC·Filed 2019·Granted Aug 17, 2021·2 cites·8 claims
- 2690US5534463AMethod for forming a wiring layerSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Jul 9, 1996·103 cites·27 claims
- 2789USD921868SAir purifierSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 8, 2021·13 cites·1 claims
- 2889US8722526B2Growing of gallium-nitrade layer on silicon substrateLEE SANG IN·Filed 2012·Granted May 13, 2014·9 cites·22 claims
- 2988US5552341ASemiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Sep 3, 1996·85 cites·31 claims
- 3087US8851012B2Vapor deposition reactor using plasma and method for forming thin film using the sameLEE SANG IN·Filed 2009·Granted Oct 7, 2014·6 cites·14 claims
- 3187US8263502B2Forming substrate structure by filling recesses with deposition materialLEE SANG IN·Filed 2009·Granted Sep 11, 2012·9 cites·53 claims
- 3287US6087257AMethods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jul 11, 2000·99 cites·24 claims
- 3387US5723384AMethod for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin filmSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Mar 3, 1998·91 cites·18 claims
- 3486US8840958B2Combined injection module for sequentially injecting source precursor and reactant precursorLEE SANG IN·Filed 2012·Granted Sep 23, 2014·3 cites·11 claims
- 3586US8691669B2Vapor deposition reactor for forming thin filmVEECO ALD INC·Filed 2013·Granted Apr 8, 2014·7 cites·12 claims
- 3686US5843843AMethod for forming a wiring layer a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 1, 1998·84 cites·20 claims
- 3785US6570253B1Multi-layer film for a thin film structure and a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 27, 2003·30 cites·13 claims
- 3884US10165697B2Display apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·16 claims
- 3984USD742960SMulti-function printerSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 10, 2015·28 cites·1 claims
- 4083US5892254AIntegrated circuit capacitors including barrier layers having grain boundary filling materialSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Apr 6, 1999·64 cites·32 claims
- 4183US5567987ASemiconductor device having a multi-layer metallization structureSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Oct 22, 1996·48 cites·13 claims
- 4282USD788843SPrinterSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 6, 2017·24 cites·1 claims
- 4382US5846859AMethod for manufacturing a semiconductor memory device having capacitive storageSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 8, 1998·56 cites·14 claims
- 4482US5572072ASemiconductor device having a multi-layer metallization structureSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Nov 5, 1996·49 cites·3 claims
- 4581US9129913B2Formation of barrier layer on device using atomic layer depositionLEE SANG IN·Filed 2011·Granted Sep 8, 2015·6 cites·8 claims
- 4681US5589713ASemiconductor device having an improved wiring layerSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Dec 31, 1996·48 cites·22 claims
- 4779USD725184SPrinterKIM JONG-KYU·Filed 2013·Granted Mar 24, 2015·23 cites·1 claims
- 4878US10645828B2Display apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 5, 2020·5 cites·16 claims
- 4978USD730915SDocking keyboardSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 2, 2015·27 cites·1 claims
- 5078US5355020ASemiconductor device having a multi-layer metal contactSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Oct 11, 1994·62 cites·32 claims
Showing the top 50 of 177 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →