Inventor · disambiguated record
Sangwoo Lim
Also filed as: LIM SANGWOO
11 granted patents·2 pending applications·45 citations·filing 2003–2024
87Inventor score
Files withFREESCALE SEMICONDUCTOR INC8SAMSUNG ELECTRONICS CO LTD3GLOBALFOUNDRIES INC1UNIV YONSEI IACF1
Top patents by PatentIndex Score
13 records- 0186US7338894B2Semiconductor device having nitridated oxide layer and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 4, 2008·12 cites·12 claims
- 0283US7402472B2Method of making a nitrided gate dielectricFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 22, 2008·9 cites·11 claims
- 0376US7504289B2Process for forming an electronic device including transistor structures with sidewall spacersFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 17, 2009·7 cites·7 claims
- 0471US7781831B2Semiconductor device having nitridated oxide layer and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 24, 2010·4 cites·8 claims
- 0571US7214590B2Method of forming an electronic deviceFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 8, 2007·5 cites·20 claims
- 0656US7041562B2Method for forming multiple gate oxide thickness utilizing ashing and cleaningFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted May 9, 2006·6 cites·23 claims
- 0750US11620057B2Storage device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 4, 2023·0 cites·20 claims
- 0850US2025199694A1Storage controller and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0948US11521859B2Non-phosphoric acid-based silicon nitride film etching composition and etching method using the sameUNIV YONSEI IACF·Filed 2021·Granted Dec 6, 2022·0 cites·13 claims
- 1048US11106576B2Data storage device for managing memory resources by using flash translation layer with condensed mapping informationSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 31, 2021·0 cites·20 claims
- 1143US7126172B2Integration of multiple gate dielectrics by surface protectionFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Oct 24, 2006·2 cites·26 claims
- 1239US10056458B2Siloxane and organic-based MOL contact patterningGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 21, 2018·0 cites·19 claims
- 1336US2006084220A1Differentially nitrided gate dielectrics in CMOS fabrication processFREESCALE SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →