Inventor · disambiguated record
Sanjay C. Mehta
Also filed as: MEHTA SANJAY · MEHTA SANJAY C
122 granted patents·20 pending applications·806 citations·filing 2003–2023
99Inventor score
Top patents by PatentIndex Score
142 records- 0199US10418277B2Air gap spacer formation for nano-scale semiconductor devicesIBM·Filed 2018·Granted Sep 17, 2019·159 cites·20 claims
- 0299US9892961B1Air gap spacer formation for nano-scale semiconductor devicesIBM·Filed 2016·Granted Feb 13, 2018·49 cites·13 claims
- 0399US9773901B1Bottom spacer formation for vertical transistorIBM·Filed 2016·Granted Sep 26, 2017·43 cites·10 claims
- 0498US9397049B1Gate tie-down enablement with inner spacerIBM·Filed 2015·Granted Jul 19, 2016·25 cites·14 claims
- 0597US9748359B1Vertical transistor bottom spacer formationIBM·Filed 2016·Granted Aug 29, 2017·18 cites·20 claims
- 0697US9484256B1Pure boron for silicide contactIBM·Filed 2015·Granted Nov 1, 2016·13 cites·12 claims
- 0796US10115629B2Air gap spacer formation for nano-scale semiconductor devicesIBM·Filed 2017·Granted Oct 30, 2018·8 cites·8 claims
- 0896US9748382B1Self aligned top extension formation for vertical transistorsIBM·Filed 2016·Granted Aug 29, 2017·13 cites·11 claims
- 0996US9583489B1Solid state diffusion doping for bulk finFET devicesIBM·Filed 2016·Granted Feb 28, 2017·17 cites·17 claims
- 1095US11456415B2Phase change memory cell with a wrap around and ring type of electrode contact and a projection linerIBM·Filed 2020·Granted Sep 27, 2022·4 cites·20 claims
- 1195US10079299B2Self aligned top extension formation for vertical transistorsIBM·Filed 2017·Granted Sep 18, 2018·8 cites·20 claims
- 1295US9954103B1Bottom spacer formation for vertical transistorIBM·Filed 2017·Granted Apr 24, 2018·11 cites·20 claims
- 1395US9941391B2Method of forming vertical transistor having dual bottom spacersIBM·Filed 2016·Granted Apr 10, 2018·8 cites·20 claims
- 1495US9484431B1Pure boron for silicide contactIBM·Filed 2015·Granted Nov 1, 2016·8 cites·7 claims
- 1595US9472407B2Replacement metal gate FinFETIBM·Filed 2015·Granted Oct 18, 2016·9 cites·4 claims
- 1694US10256320B1Vertical field-effect-transistors having a silicon oxide layer with controlled thicknessIBM·Filed 2017·Granted Apr 9, 2019·11 cites·20 claims
- 1794US9576954B1POC process flow for conformal recess fillIBM·Filed 2015·Granted Feb 21, 2017·8 cites·10 claims
- 1894US9356121B2Divot-free planarization dielectric layer for replacement gateIBM·Filed 2014·Granted May 31, 2016·14 cites·13 claims
- 1994US7517736B2Structure and method of chemically formed anchored metallic viasIBM·Filed 2006·Granted Apr 14, 2009·34 cites·7 claims
- 2093US9871041B1Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistorsIBM·Filed 2016·Granted Jan 16, 2018·8 cites·14 claims
- 2193US9443855B1Spacer formation on semiconductor deviceIBM·Filed 2015·Granted Sep 13, 2016·7 cites·17 claims
- 2293US7253105B2Reliable BEOL integration process with direct CMP of porous SiCOH dielectricIBM·Filed 2005·Granted Aug 7, 2007·26 cites·20 claims
- 2392US9735054B2Gate tie-down enablement with inner spacerIBM·Filed 2016·Granted Aug 15, 2017·4 cites·20 claims
- 2492US9425292B1Field effect transistor device spacersIBM·Filed 2016·Granted Aug 23, 2016·6 cites·1 claims
- 2592US9406767B1POC process flow for conformal recess fillIBM·Filed 2016·Granted Aug 2, 2016·6 cites·1 claims
- 2692US8835237B2Robust replacement gate integrationIBM·Filed 2012·Granted Sep 16, 2014·12 cites·11 claims
- 2792US8617961B1Post-gate isolation area formation for fin field effect transistor deviceHARAN BALASUBRAMANIAN S·Filed 2012·Granted Dec 31, 2013·14 cites·20 claims
- 2892US8486778B2Low resistance source and drain extensions for ETSOIHARAN BALASUBRAMANIAN S·Filed 2011·Granted Jul 16, 2013·13 cites·5 claims
- 2990US10304936B2Protection of high-K dielectric during reliability anneal on nanosheet structuresIBM·Filed 2016·Granted May 28, 2019·5 cites·12 claims
- 3090US8394684B2Structure and method for stress latching in non-planar semiconductor devicesKANAKASABAPATHY SIVANANDA K·Filed 2010·Granted Mar 12, 2013·12 cites·17 claims
- 3189US10262904B2Vertical transistor top epitaxy source/drain and contact structureIBM·Filed 2017·Granted Apr 16, 2019·5 cites·14 claims
- 3289US9634110B2POC process flow for conformal recess fillIBM·Filed 2016·Granted Apr 25, 2017·4 cites·13 claims
- 3389US9171927B2Spacer replacement for replacement metal gate semiconductor devicesIBM·Filed 2013·Granted Oct 27, 2015·9 cites·9 claims
- 3489US9153447B2Replacement metal gate FinFETIBM·Filed 2012·Granted Oct 6, 2015·7 cites·5 claims
- 3589US8900973B2Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusionBERLINER NATHANIEL C·Filed 2011·Granted Dec 2, 2014·14 cites·18 claims
- 3689US8829617B2Uniform finFET gate heightIBM·Filed 2012·Granted Sep 9, 2014·9 cites·6 claims
- 3789US8440552B1Method to form low series resistance transistor devices on silicon on insulator layerCHEN KANGGUO·Filed 2012·Granted May 14, 2013·17 cites·18 claims
- 3889US7838428B2Method of repairing process induced dielectric damage by the use of GCIB surface treatment using gas clusters of organic molecular speciesIBM·Filed 2006·Granted Nov 23, 2010·16 cites·10 claims
- 3987US9558934B2Hydrogen-free silicon-based deposited dielectric films for nano device fabricationIBM·Filed 2015·Granted Jan 31, 2017·3 cites·7 claims
- 4086US11658062B2Air gap spacer formation for nano-scale semiconductor devicesTESSERA LLC·Filed 2019·Granted May 23, 2023·2 cites·27 claims
- 4186US10840354B2Approach to bottom dielectric isolation for vertical transport fin field effect transistorsIBM·Filed 2017·Granted Nov 17, 2020·3 cites·8 claims
- 4286US10629702B2Approach to bottom dielectric isolation for vertical transport fin field effect transistorsIBM·Filed 2018·Granted Apr 21, 2020·3 cites·9 claims
- 4386US8822137B2Self-aligned fine pitch permanent on-chip interconnect structures and method of fabricationLIN QINGHUANG·Filed 2011·Granted Sep 2, 2014·7 cites·17 claims
- 4486US8476743B2C-rich carbon boron nitride dielectric films for use in electronic devicesNGUYEN SON VAN·Filed 2011·Granted Jul 2, 2013·6 cites·16 claims
- 4585US12224203B2Air gap spacer formation for nano-scale semiconductor devicesADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 4685US8652950B2C-rich carbon boron nitride dielectric films for use in electronic devicesIBM·Filed 2013·Granted Feb 18, 2014·5 cites·18 claims
- 4785US7816253B2Surface treatment of inter-layer dielectricIBM·Filed 2006·Granted Oct 19, 2010·10 cites·6 claims
- 4884US10879375B2Gate tie-down enablement with inner spacerIBM·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
- 4984US10170479B2Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistorsIBM·Filed 2017·Granted Jan 1, 2019·3 cites·16 claims
- 5083US9847388B2High thermal budget compatible punch through stop integration using doped glassIBM·Filed 2015·Granted Dec 19, 2017·2 cites·8 claims
Showing the top 50 of 142 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Sanjay C. Mehta files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →