Inventor · disambiguated record
Satoru Mitani
Also filed as: MITANI SATORU
42 granted patents·1 pending application·580 citations·filing 1977–2013
98Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD12PANASONIC CORP11KANZAWA YOSHIHIKO4MITANI SATORU4MURAOKA SHUNSAKU4
Top patents by PatentIndex Score
43 records- 0197US8022502B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory elementPANASONIC CORP·Filed 2008·Granted Sep 20, 2011·60 cites·23 claims
- 0296US7577022B2Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltagePANASONIC CORP·Filed 2005·Granted Aug 18, 2009·56 cites·46 claims
- 0393US7525832B2Memory device and semiconductor integrated circuitPANASONIC CORP·Filed 2006·Granted Apr 28, 2009·34 cites·30 claims
- 0492US8445319B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2011·Granted May 21, 2013·15 cites·4 claims
- 0591US8094485B2Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effectSHIMAKAWA KAZUHIKO·Filed 2008·Granted Jan 10, 2012·22 cites·21 claims
- 0691US6493194B1Thin film magnetic headMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Dec 10, 2002·33 cites·13 claims
- 0790US8233311B2Variable resistance nonvolatile storage device having a source line formed of parallel wiring layers connected to each other through viasSHIMAKAWA KAZUHIKO·Filed 2011·Granted Jul 31, 2012·11 cites·3 claims
- 0889US9006698B2Variable resistance element and method of manufacturing the sameWEI ZHIQIANG·Filed 2012·Granted Apr 14, 2015·8 cites·15 claims
- 0989US7786548B2Electric element, memory device, and semiconductor integrated circuitPANASONIC CORP·Filed 2006·Granted Aug 31, 2010·13 cites·17 claims
- 1087US6407885B1Thin film magnetic head and method for fabricating sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 18, 2002·25 cites·8 claims
- 1187US6407004B1Thin film device and method for manufacturing thin film deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 18, 2002·40 cites·7 claims
- 1286US8179713B2Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor deviceKANZAWA YOSHIHIKO·Filed 2009·Granted May 15, 2012·17 cites·44 claims
- 1386US5436780AThin film magnetic head deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Jul 25, 1995·48 cites·6 claims
- 1485US8264865B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory elementMITANI SATORU·Filed 2009·Granted Sep 11, 2012·15 cites·25 claims
- 1583US8279658B2Method of programming variable resistance element and nonvolatile storage deviceMURAOKA SHUNSAKU·Filed 2010·Granted Oct 2, 2012·8 cites·9 claims
- 1681US8309946B2Resistance variable elementMITANI SATORU·Filed 2009·Granted Nov 13, 2012·7 cites·7 claims
- 1780US8395930B2Method of programming variable resistance element and nonvolatile storage deviceMURAOKA SHUNSAKU·Filed 2012·Granted Mar 12, 2013·6 cites·9 claims
- 1879US8472238B2Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effectSHIMAKAWA KAZUHIKO·Filed 2012·Granted Jun 25, 2013·5 cites·19 claims
- 1979US5335127ALamination type magneto-resistive headMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Aug 2, 1994·28 cites·2 claims
- 2078US8345465B2Driving method of variable resistance element, initialization method of variable resistance element, and nonvolatile storage devicePANASONIC CORP·Filed 2009·Granted Jan 1, 2013·10 cites·14 claims
- 2177US8553444B2Variable resistance nonvolatile storage device and method of forming memory cellMURAOKA SHUNSAKU·Filed 2009·Granted Oct 8, 2013·9 cites·26 claims
- 2277US8338816B2Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2008·Granted Dec 25, 2012·5 cites·33 claims
- 2373US8445886B2Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method of manufacturing nonvolatile memory elementFUJII SATORU·Filed 2010·Granted May 21, 2013·3 cites·19 claims
- 2473US5095397AThin film magnetic head of embodied recording and reproducing transducer typeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Mar 10, 1992·21 cites·10 claims
- 2571US9111610B2Method of driving nonvolatile memory element and nonvolatile memory devicePANASONIC CORP·Filed 2013·Granted Aug 18, 2015·4 cites·21 claims
- 2668US8553446B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory elementMITANI SATORU·Filed 2012·Granted Oct 8, 2013·3 cites·12 claims
- 2767US7787280B2Electric element, memory device, and semiconductor integrated circuitPANASONIC CORP·Filed 2006·Granted Aug 31, 2010·6 cites·10 claims
- 2865US5535079AIntegrated thin film magnetic headFiled 1994·Granted Jul 9, 1996·17 cites·1 claims
- 2964US4663683AMagnetoresistive thin film headMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1983·Granted May 5, 1987·12 cites·4 claims
- 3062US4133703APermanent magnetic Mn-Al-C alloyMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1977·Granted Jan 9, 1979·11 cites·3 claims
- 3160US8445885B2Nonvolatile memory element having a thin platinum containing electrodeKANZAWA YOSHIHIKO·Filed 2009·Granted May 21, 2013·1 cites·5 claims
- 3258US8942025B2Variable resistance nonvolatile memory element writing methodKATAYAMA KOJI·Filed 2012·Granted Jan 27, 2015·2 cites·9 claims
- 3358US5412524AMagneto-resistive headMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted May 2, 1995·9 cites·2 claims
- 3456US8830730B2Variable resistance nonvolatile storage device and method of forming memory cellPANASONIC CORP·Filed 2013·Granted Sep 9, 2014·1 cites·4 claims
- 3553US9082479B2Nonvolatile memory element and nonvolatile memory devicePANASONIC IP MAN CO LTD·Filed 2012·Granted Jul 14, 2015·1 cites·13 claims
- 3652US7964869B2Memory element, memory apparatus, and semiconductor integrated circuitPANASONIC CORP·Filed 2007·Granted Jun 21, 2011·2 cites·21 claims
- 3748US2010188884A1Nonvolatile memory element, nonvolatile memory apparatus, and method of writing data to nonvolatile memory elementMITANI SATORU·Filed 2009·Application pending·0 cites
- 3846US7855910B2Electric element, memory device, and semiconductor integrated circuitPANASONIC CORP·Filed 2007·Granted Dec 21, 2010·1 cites·10 claims
- 3944US4897318ALaminated magnetic materialsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Jan 30, 1990·8 cites·18 claims
- 4037US9390797B2Driving method of variable resistance element and non-volatile memory devicePANASONIC CORP·Filed 2012·Granted Jul 12, 2016·0 cites·15 claims
- 4137US9153319B2Method for driving nonvolatile memory element, and nonvolatile memory device having a variable resistance elementMURAOKA SHUNSAKU·Filed 2012·Granted Oct 6, 2015·0 cites·21 claims
- 4235US5585985AMagneto-resistive head including a film of hard magnetic materialMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Dec 17, 1996·2 cites·7 claims
- 4330US5663644AMagnetoresistive sensor having a bias field applied at approximately 56°MATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Sep 2, 1997·1 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →