Inventor · disambiguated record
Salil Mujumdar
Also filed as: MUJUMDAR SALIL · MUJUMDAR SALIL SHASHIKANT
4 granted patents·16 pending applications·28 citations·filing 2012–2025
70Inventor score
Files withINTERMOLECULAR INC9MICRON TECHNOLOGY INC5GLOBALFOUNDRIES INC3Intermolecular2MUJUMDAR SALIL1
Top patents by PatentIndex Score
20 records- 0193US9105497B2Methods of forming gate structures for transistor devices for CMOS applicationsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 11, 2015·19 cites·24 claims
- 0292US9362283B2Gate structures for transistor devices for CMOS applications and productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·9 cites·20 claims
- 0364US2025085887A1Inductors using nand layersMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0456US9224644B2Method to control depth profiles of dopants using a remote plasma sourceINTERMOLECULAR INC·Filed 2012·Granted Dec 29, 2015·0 cites·12 claims
- 0554US2025246238A1Nand array inductorsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0652US2025379195A1Integrated inductors using multiple diesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0749US2024079059A1High voltage device and methodMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 0846US2024334707A1High voltage device and methodMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0944US2016181380A1Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the SameINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 1042US9607904B2Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devicesINTERMOLECULAR INC·Filed 2013·Granted Mar 28, 2017·0 cites·20 claims
- 1142US2015380309A1Metal-insulator-semiconductor (MIS) contact with controlled defect densityINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 1241US2015093887A1Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuitsiGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 1340US2015140838A1Two Step Deposition of High-k Gate Dielectric MaterialsINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 1439US2015093914A1Methods for depositing an aluminum oxide layer over germanium susbtrates in the fabrication of integrated circuitsIntermolecular·Filed 2013·Application pending·0 cites
- 1538US2015093889A1Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuitsIntermolecular·Filed 2013·Application pending·0 cites
- 1636US2014008763A1Distributed substrate top contact for moscap measurementsMUJUMDAR SALIL·Filed 2012·Application pending·0 cites
- 1736US2014175618A1Transition metal aluminate and high k dielectric semiconductor stackINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 1836US2017104031A1Selector ElementsINTERMOLECULAR INC·Filed 2016·Application pending·0 cites
- 1936US2014099785A1Sacrificial Low Work Function Cap LayerINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 2029US2017062522A1Combining Materials in Different Components of Selector Elements of Integrated CircuitsINTERMOLECULAR INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →