Inventor · disambiguated record
Sayako Nagamine
Also filed as: NAGAMINE SAYAKO
10 granted patents·1 pending application·97 citations·filing 2014–2021
88Inventor score
Top patents by PatentIndex Score
11 records- 0196US11417621B2Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 16, 2022·6 cites·15 claims
- 0296US10957680B2Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 23, 2021·18 cites·1 claims
- 0396US10297610B2Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 21, 2019·26 cites·6 claims
- 0496US10236300B2On-pitch drain select level isolation structure for three-dimensional memory device and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 19, 2019·15 cites·13 claims
- 0593US10403639B2Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Sep 3, 2019·10 cites·20 claims
- 0691US10943917B2Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 9, 2021·8 cites·13 claims
- 0789US9281314B1Non-volatile storage having oxide/nitride sidewallSANDISK TECHNOLOGIES INC·Filed 2014·Granted Mar 8, 2016·11 cites·19 claims
- 0882US11581049B2System and methods for programming nonvolatile memory having partial select gate drainsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Feb 14, 2023·1 cites·20 claims
- 0977US11121149B2Three-dimensional memory device containing direct contact drain-select-level semiconductor channel portions and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Sep 14, 2021·2 cites·11 claims
- 1061USRE49165EOn-pitch drain select level isolation structure for three-dimensional memory device and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 9, 2022·0 cites·13 claims
- 1131US2016343722A1Nonvolatile storage with gap in inter-gate dielectricSANDISK TECHNOLOGIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →