Inventor · disambiguated record
Sadayuki Ohnishi
Also filed as: OHNISHI SADAYUKI
12 granted patents·2 pending applications·133 citations·filing 1992–2017
90Inventor score
Top patents by PatentIndex Score
14 records- 0187US7420279B2Carbon containing silicon oxide film having high ashing tolerance and adhesionNEC ELECTRONICS CORP·Filed 2006·Granted Sep 2, 2008·13 cites·7 claims
- 0286US7563705B2Manufacturing method of semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Granted Jul 21, 2009·10 cites·9 claims
- 0378US5397748AMethod of producing semiconductor device with insulating film having at least silicon nitride filmNEC CORP·Filed 1992·Granted Mar 14, 1995·66 cites·1 claims
- 0474US7833901B2Method for manufacturing a semiconductor device having a multi-layered insulating structure of SiOCH layers and an SiO2 layerNEC ELECTRONICS CORP·Filed 2006·Granted Nov 16, 2010·5 cites·44 claims
- 0572US7132732B2Semiconductor device having two distinct sioch layersNEC ELECTRONICS CORP·Filed 2004·Granted Nov 7, 2006·16 cites·33 claims
- 0663US7074698B2Method of fabricating semiconductor device using plasma-enhanced CVDNEC ELECTRONICS CORP·Filed 2004·Granted Jul 11, 2006·5 cites·27 claims
- 0760US7102236B2Carbon containing silicon oxide film having high ashing tolerance and adhesionNEC ELECTRONICS CORP·Filed 2004·Granted Sep 5, 2006·6 cites·11 claims
- 0852US7582970B2Carbon containing silicon oxide film having high ashing tolerance and adhesionNEC ELECTRONICS CORP·Filed 2008·Granted Sep 1, 2009·0 cites·7 claims
- 0950US10153274B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Dec 11, 2018·0 cites·16 claims
- 1050US5691220AProcess of fabricating semiconductor device having capacitor electrode implanted with boron difluorideNEC CORP·Filed 1996·Granted Nov 25, 1997·12 cites·12 claims
- 1147US9660061B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted May 23, 2017·0 cites·14 claims
- 1241US8598044B2Method of fabricating a semiconductor deviceUSAMI TATSUYA·Filed 2005·Granted Dec 3, 2013·0 cites·28 claims
- 1341US2003155657A1Manufacturing method of semiconductor deviceNEC ELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 1436US2004041269A1Semiconductor device and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →