Inventor · disambiguated record
Satoshi Oida
Also filed as: OIDA SATOSHI
18 granted patents·3 pending applications·90 citations·filing 2009–2019
93Inventor score
Top patents by PatentIndex Score
21 records- 0195US8741678B2Transparent conductive electrode stack containing carbon-containing materialIBM·Filed 2012·Granted Jun 3, 2014·12 cites·17 claims
- 0294US8969115B2Transparent conductive electrode stack containing carbon-containing materialIBM·Filed 2014·Granted Mar 3, 2015·10 cites·14 claims
- 0393US9472450B2Graphene cap for copper interconnect structuresBONILLA GRISELDA·Filed 2012·Granted Oct 18, 2016·13 cites·5 claims
- 0492US10256405B2Methods for fabricating artificial neural networks (ANN) based on doped semiconductor elementsIBM·Filed 2017·Granted Apr 9, 2019·5 cites·20 claims
- 0591US8895433B2Method of forming a graphene cap for copper interconnect structuresSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 25, 2014·9 cites·17 claims
- 0690US9508801B2Stacked graphene field-effect transistorIBM·Filed 2015·Granted Nov 29, 2016·6 cites·7 claims
- 0790US8623761B2Method of forming a graphene cap for copper interconnect structuresBONILLA GRISELDA·Filed 2012·Granted Jan 7, 2014·9 cites·10 claims
- 0889US8242030B2Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidationHANNON JAMES B·Filed 2009·Granted Aug 14, 2012·20 cites·19 claims
- 0980US9711613B2Stacked graphene field-effect transistorIBM·Filed 2016·Granted Jul 18, 2017·2 cites·10 claims
- 1078US10748059B2Architecture for an electrochemical artificial neural networkIBM·Filed 2017·Granted Aug 18, 2020·3 cites·11 claims
- 1174US10361331B2Photovoltaic structures having multiple absorber layers separated by a diffusion barrierIBM·Filed 2017·Granted Jul 23, 2019·1 cites·17 claims
- 1268US11276796B2Photovoltaic structures having multiple absorber layers separated by a diffusion barrierIBM·Filed 2019·Granted Mar 15, 2022·0 cites·20 claims
- 1367US10749050B2Thin film CZTSSe photovoltaic deviceIBM·Filed 2017·Granted Aug 18, 2020·0 cites·19 claims
- 1464US11227996B2Artificial neural networks (ANN) including a resistive element based on doped semiconductor elementsIBM·Filed 2019·Granted Jan 18, 2022·0 cites·2 claims
- 1564US11024803B2Methods for fabricating artificial neural networks (ANN) based on doped semiconductor resistive random access memory (RRAM) elementsIBM·Filed 2019·Granted Jun 1, 2021·0 cites·19 claims
- 1660US10269994B2Liftoff process for exfoliation of thin film photovoltaic devices and back contact formationIBM·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 1760US10008618B2Liftoff process for exfoliation of thin film photovoltaic devices and back contact formationIBM·Filed 2017·Granted Jun 26, 2018·0 cites·17 claims
- 1856US2014084253A1Transparent conductive electrode stack containing carbon-containing materialIBM·Filed 2012·Application pending·0 cites
- 1955US9935214B2Liftoff process for exfoliation of thin film photovoltaic devices and back contact formationIBM·Filed 2015·Granted Apr 3, 2018·0 cites·14 claims
- 2055US2014087501A1Doped graphene transparent conductive electrodeIBM·Filed 2012·Application pending·0 cites
- 2155US2014084252A1Doped graphene transparent conductive electrodeIBM·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →