Inventor · disambiguated record
Sangwoo Pae
Also filed as: PAE SANGWOO
16 granted patents·9 pending applications·193 citations·filing 2004–2025
91Inventor score
Top patents by PatentIndex Score
25 records- 0194US7381608B2Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrodeINTEL CORP·Filed 2004·Granted Jun 3, 2008·85 cites·20 claims
- 0294US7074680B2Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2004·Granted Jul 11, 2006·64 cites·20 claims
- 0391US7084038B2Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2005·Granted Aug 1, 2006·13 cites·14 claims
- 0488US7531404B2Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layerINTEL CORP·Filed 2005·Granted May 12, 2009·16 cites·23 claims
- 0574US11961824B2Semiconductor package including stacked chip structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 16, 2024·1 cites·20 claims
- 0674US8101471B2Method of forming programmable anti-fuse elementHAFEZ WALID M·Filed 2008·Granted Jan 24, 2012·8 cites·8 claims
- 0770US7442983B2Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2006·Granted Oct 28, 2008·2 cites·7 claims
- 0866US7709909B2Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2008·Granted May 4, 2010·1 cites·14 claims
- 0961US7755140B2Process charging and electrostatic damage protection in silicon-on-insulator technologyINTEL CORP·Filed 2006·Granted Jul 13, 2010·2 cites·8 claims
- 1057US11637065B2Semiconductor device including via and wiringSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 25, 2023·0 cites·20 claims
- 1153US10048137B2Semiconductor devices including electrodes for temperature measurementSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 14, 2018·1 cites·17 claims
- 1253US2019294748A1Simulation system estimating self-heating characteristic of circuit and design method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 1353US2019130059A1Simulation system estimating self-heating characteristic of circuit and design method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 1452US11239162B2Semiconductor device including via and wiringSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 1551US2024074154A1Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1649US12501608B2Semiconductor device having different extending active layersSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 1747US11735491B2Semiconductor package deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 1845US2025309197A1Semiconductor packageSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1942US2008070367A1Methods to create dual-gate dielectrics in transistors using high-K dielectricPAE SANGWOO·Filed 2006·Application pending·0 cites
- 2041US10216876B2Simulation system estimating self-heating characteristic of circuit and design method thereofJEON JONGWOOK·Filed 2015·Granted Feb 26, 2019·0 cites·13 claims
- 2141US2008242012A1High quality silicon oxynitride transition layer for high-k/metal gate transistorsPAE SANGWOO·Filed 2007·Application pending·0 cites
- 2240US2020395463A1Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 2336US2009323235A1High voltage compliant apparatus for semiconductor fabrication process charging protectionPAE SANGWOO·Filed 2008·Application pending·0 cites
- 2435US10355004B2Memory devices including one-time programmable memory cellsCHOI HYUN MIN·Filed 2015·Granted Jul 16, 2019·0 cites·18 claims
- 2532US2008076216A1Method to fabricate high-k/metal gate transistors using a double capping layer processPAE SANGWOO·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →