Inventor · disambiguated record
Sahil Patel
Also filed as: PATEL SAHIL · PATEL SAHIL JAYKUMAR
32 granted patents·9 pending applications·64 citations·filing 2017–2025
95Inventor score
Top patents by PatentIndex Score
41 records- 0197US10797225B2Dual magnetic tunnel junction (DMTJ) stack designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·10 cites·33 claims
- 0295US10648069B2Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·5 cites·23 claims
- 0395US9935261B1Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputteringHEADWAY TECH INC·Filed 2017·Granted Apr 3, 2018·14 cites·24 claims
- 0494US10516100B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·8 cites·20 claims
- 0591US10297746B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·5 cites·13 claims
- 0689US11696511B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 4, 2023·2 cites·20 claims
- 0789US10522749B2Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·5 cites·19 claims
- 0887US10115892B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2017·Granted Oct 30, 2018·2 cites·7 claims
- 0985US10522745B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·3 cites·20 claims
- 1080US10797232B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·3 cites·20 claims
- 1179US11903324B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 1278US11031548B2Reduce intermixing on MTJ sidewall by oxidationHEADWAY TECH INC·Filed 2019·Granted Jun 8, 2021·2 cites·19 claims
- 1378US2025338775A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1476US12185641B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 1574US12201030B2Spin-orbit torque MRAM structure and manufacture thereofAPPLIED MATERIALS INC·Filed 2023·Granted Jan 14, 2025·0 cites·3 claims
- 1674US11597993B2Monolayer-by-monolayer growth of MgO layers using mg sublimation and oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 1774US10038138B1High temperature volatilization of sidewall materials from patterned magnetic tunnel junctionsHEADWAY TECH INC·Filed 2017·Granted Jul 31, 2018·2 cites·20 claims
- 1872US12310245B2Etching and encapsulation scheme for magnetic tunnel junction fabricationHEADWAY TECH INC·Filed 2023·Granted May 20, 2025·0 cites·8 claims
- 1972US11424405B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
- 2071US12082509B2Dual magnetic tunnel junction (DMTJ) stack designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 3, 2024·0 cites·20 claims
- 2171US10784310B2Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devicesHEADWAY TECH INC·Filed 2018·Granted Sep 22, 2020·2 cites·41 claims
- 2270US12356865B2Multilayer structure for reducing film roughness in magnetic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 8, 2025·0 cites·20 claims
- 2370US11001919B2Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·0 cites·20 claims
- 2469US11289645B2Method to integrate MRAM devices to the interconnects of 30nm and beyond CMOS technologiesHEADWAY TECH INC·Filed 2018·Granted Mar 29, 2022·1 cites·13 claims
- 2567US2019088866A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesHEADWAY TECH INC·Filed 2018·Application pending·0 cites
- 2665US11411174B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 9, 2022·0 cites·20 claims
- 2765US10700269B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 30, 2020·0 cites·20 claims
- 2864US11631802B2Etching and encapsulation scheme for magnetic tunnel junction fabricationHEADWAY TECH INC·Filed 2019·Granted Apr 18, 2023·0 cites·9 claims
- 2963US11316103B2Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·0 cites·19 claims
- 3062US11723283B2Spin-orbit torque MRAM structure and manufacture thereofAPPLIED MATERIALS INC·Filed 2020·Granted Aug 8, 2023·0 cites·10 claims
- 3158US12394619B2Metal oxide preclean for bottom-up gapfill in MEOL and BEOLAPPLIED MATERIALS INC·Filed 2023·Granted Aug 19, 2025·0 cites·13 claims
- 3257US11956971B2Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·20 claims
- 3357US2024371771A1Interruption layer fill for low resistance contactsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3456US12374568B2One chamber multi-station selective metal removalAPPLIED MATERIALS INC·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 3556US2025006518A1Bottom etch process for contact plug anchoringAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3656US2025105013A1Low resistivity metal stacks and methods of depositing the sameAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3754US2025336722A1Flux gradient molybdenum growth processAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3853US2024194527A1Interlayer for Resistivity Reduction in Metal Deposition ApplicationsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3952US2024355673A1Hybrid molybdenum fill scheme for low resistivity semiconductor applicationsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4052US2024145300A1Buffer Layer for Dielectric Protection in Physical Vapor Deposition Metal Liner ApplicationsAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 4142US11522126B2Magnetic tunnel junctions with protection layersAPPLIED MATERIALS INC·Filed 2019·Granted Dec 6, 2022·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →