Inventor · disambiguated record
Sameer Pendharkar
Also filed as: PENDHARKAR SAMEER · PENDHARKAR SAMEER P · PENDHARKAR SAMEER PRAKASH
231 granted patents·16 pending applications·1,482 citations·filing 1998–2024
99Inventor score
Top patents by PatentIndex Score
247 records- 0197US8759879B1RESURF III-nitride HEMTsTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 24, 2014·42 cites·20 claims
- 0295US9865729B1Laterally diffused metal oxide semiconductor with segmented gate oxideTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 9, 2018·13 cites·10 claims
- 0394US9685545B2Isolated III-N semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2015·Granted Jun 20, 2017·11 cites·19 claims
- 0494US9583596B2Drain extended CMOS with counter-doped drain extensionTEXAS INSTRUMENTS INC·Filed 2015·Granted Feb 28, 2017·8 cites·11 claims
- 0594US6424005B1LDMOS power device with oversized dwellTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 23, 2002·140 cites·11 claims
- 0693US9882041B1HEMT having conduction barrier between drain fingertip and sourceTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 30, 2018·8 cites·8 claims
- 0793US8253193B2MOS transistor with gate trench adjacent to drain extension field insulationDENISON MARIE·Filed 2011·Granted Aug 28, 2012·14 cites·6 claims
- 0893US7187033B2Drain-extended MOS transistors with diode clamp and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 6, 2007·69 cites·11 claims
- 0993US6395593B1Method of manufacturing high side and low side guard rings for lowest parasitic performance in an H-bridge configurationTEXAS INSTRUMENTS INC·Filed 2000·Granted May 28, 2002·72 cites·15 claims
- 1092US9899484B1Transistor with source field plates under gate runner layersTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 20, 2018·7 cites·20 claims
- 1192US9397023B2Integration of heat spreader for beol thermal managementTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 19, 2016·11 cites·8 claims
- 1291US10263085B2Transistor with source field plates and non-overlapping gate runner layersTEXAS INSTRUMENTS INC·Filed 2017·Granted Apr 16, 2019·6 cites·20 claims
- 1391US9786665B1Dual deep trenches for high voltage isolationTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 10, 2017·7 cites·23 claims
- 1491US7745294B2Methods of manufacturing trench isolated drain extended MOS (demos) transistors and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2008·Granted Jun 29, 2010·19 cites·19 claims
- 1591US6211552B1Resurf LDMOS device with deep drain regionTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 3, 2001·122 cites·9 claims
- 1690US9608105B2Semiconductor structure with a doped region between two deep trench isolation structuresTEXAS INSTRUMENTS INC·Filed 2015·Granted Mar 28, 2017·8 cites·5 claims
- 1790US9431480B1Diluted drift layer with variable stripe widths for power transistorsTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 30, 2016·5 cites·13 claims
- 1889US9054027B2III-nitride device and method having a gate isolating structureTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 9, 2015·9 cites·20 claims
- 1989US8754469B2Hybrid active-field gap extended drain MOS transistorPENDHARKAR SAMEER P·Filed 2011·Granted Jun 17, 2014·7 cites·12 claims
- 2089US8264038B2Buried floating layer structure for improved breakdownPENDHARKAR SAMEER P·Filed 2009·Granted Sep 11, 2012·20 cites·23 claims
- 2189US8124482B2MOS transistor with gate trench adjacent to drain extension field insulationDENISON MARIE·Filed 2011·Granted Feb 28, 2012·9 cites·7 claims
- 2289US7732863B2Laterally diffused MOSFETTEXAS INSTRUMENTS INC·Filed 2008·Granted Jun 8, 2010·10 cites·6 claims
- 2389US6441431B1Lateral double diffused metal oxide semiconductor deviceTEXAS INSTRUMENTS INC·Filed 1999·Granted Aug 27, 2002·74 cites·17 claims
- 2489US2024304719A1Trench gate trench field plate vertical mosfetTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2588US8829613B1Stepped dielectric for field plate formationTEXAS INSTRUMENTS INC·Filed 2013·Granted Sep 9, 2014·6 cites·9 claims
- 2688US8643099B2Integrated lateral high voltage MOSFETTEXAS INSTRUMENTS INC·Filed 2013·Granted Feb 4, 2014·7 cites·8 claims
- 2788US8592900B2Drain extended CMOS with counter-doped drain extensionSTEINMANN PHILIPP·Filed 2011·Granted Nov 26, 2013·8 cites·8 claims
- 2888US7847351B2Lateral metal oxide semiconductor drain extension designTEXAS INSTRUMENTS INC·Filed 2008·Granted Dec 7, 2010·12 cites·22 claims
- 2988US7514329B2Robust DEMOS transistors and method for making the sameTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 7, 2009·15 cites·26 claims
- 3088US7414287B2System and method for making a LDMOS device with electrostatic discharge protectionTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 19, 2008·14 cites·6 claims
- 3187US11322610B2High voltage lateral junction diode deviceTEXAS INSTRUMENTS INC·Filed 2020·Granted May 3, 2022·2 cites·19 claims
- 3287US10014231B1Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devicesTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 3, 2018·5 cites·11 claims
- 3387US9985095B2Lateral MOSFET with buried drain extension layerTEXAS INSTRUMENTS INC·Filed 2016·Granted May 29, 2018·3 cites·18 claims
- 3487US9123802B2Vertical trench MOSFET device in integrated power technologiesTEXAS INSTRUMENTS INC·Filed 2013·Granted Sep 1, 2015·6 cites·17 claims
- 3587US7618870B2Non-uniformly doped high voltage drain-extended transistor and method of manufacture thereofTEXAS INSTRUMENTS INC·Filed 2009·Granted Nov 17, 2009·10 cites·6 claims
- 3686US9431286B1Deep trench with self-aligned sinkerTEXAS INSTRUMENTS INC·Filed 2014·Granted Aug 30, 2016·8 cites·7 claims
- 3786US7262471B2Drain extended PMOS transistor with increased breakdown voltageTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 28, 2007·13 cites·19 claims
- 3886US7176091B2Drain-extended MOS transistors and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2005·Granted Feb 13, 2007·11 cites·1 claims
- 3985US9076863B2Semiconductor structure with a doped region between two deep trench isolation structuresTEXAS INSTRUMENTS INC·Filed 2013·Granted Jul 7, 2015·7 cites·13 claims
- 4085US7713825B2LDMOS transistor double diffused region formation processTEXAS INSTRUMENTS INC·Filed 2007·Granted May 11, 2010·11 cites·13 claims
- 4184US9379022B2Process for forming driver for normally on III-nitride transistors to get normally-off functionalityTEXAS INSTRUMENTS INC·Filed 2015·Granted Jun 28, 2016·3 cites·10 claims
- 4284US6919603B2Efficient protection structure for reverse pin-to-pin electrostatic dischargeTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 19, 2005·34 cites·21 claims
- 4384US6160290AReduced surface field device having an extended field plate and method for forming the sameTEXAS INSTRUMENTS INC·Filed 1998·Granted Dec 12, 2000·49 cites·16 claims
- 4484US2025063755A1Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 4583US12166119B2Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2023·Granted Dec 10, 2024·0 cites·18 claims
- 4683US11152459B2Lateral MOSFET with buried drain extension layerTEXAS INSTRUMENTS INC·Filed 2020·Granted Oct 19, 2021·1 cites·27 claims
- 4783US7772075B2Formation of a MOSFET using an angled implantTEXAS INSTRUMENTS INC·Filed 2009·Granted Aug 10, 2010·6 cites·14 claims
- 4883US7772644B2Vertical diffused MOSFETTEXAS INSTRUMENTS INC·Filed 2009·Granted Aug 10, 2010·6 cites·3 claims
- 4983US7687853B2System and method for making a LDMOS device with electrostatic discharge protectionTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 30, 2010·9 cites·5 claims
- 5083US6468837B1Reduced surface field device having an extended field plate and method for forming the sameTEXAS INSTRUMENTS INC·Filed 2000·Granted Oct 22, 2002·28 cites·17 claims
Showing the top 50 of 247 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Sameer Pendharkar files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →