Inventor · disambiguated record
Saptharishi Sriram
Also filed as: SRIRAM SAPTHARISHI
53 granted patents·2 pending applications·649 citations·filing 1990–2024
98Inventor score
Files withCREE INC33WOLFSPEED INC8NORTHROP GRUMMAN CORP4SRIRAM SAPTHARISHI3MACOM TECH SOLUTIONS HOLDINGS INC2
Top patents by PatentIndex Score
55 records- 0194US10892356B2Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the sameCREE INC·Filed 2019·Granted Jan 12, 2021·9 cites·8 claims
- 0294US9847411B2Recessed field plate transistor structuresCREE INC·Filed 2013·Granted Dec 19, 2017·26 cites·33 claims
- 0394US5386115ASolid state micro-machined mass spectrograph universal gas detection sensorWESTINGHOUSE ELECTRIC CORP·Filed 1993·Granted Jan 31, 1995·96 cites·20 claims
- 0493US10516043B1Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistorsCREE INC·Filed 2018·Granted Dec 24, 2019·10 cites·23 claims
- 0593US9755059B2Cascode structures with GaN cap layersCREE INC·Filed 2013·Granted Sep 5, 2017·10 cites·28 claims
- 0693US7525122B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2005·Granted Apr 28, 2009·22 cites·39 claims
- 0793US7265399B2Asymetric layout structures for transistors and methods of fabricating the sameCREE INC·Filed 2004·Granted Sep 4, 2007·78 cites·36 claims
- 0891US11929428B2Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the sameCREE INC·Filed 2021·Granted Mar 12, 2024·2 cites·64 claims
- 0990US11658234B2Field effect transistor with enhanced reliabilityWOLFSPEED INC·Filed 2021·Granted May 23, 2023·2 cites·24 claims
- 1089US6956239B2Transistors having buried p-type layers beneath the source regionCREE INC·Filed 2002·Granted Oct 18, 2005·43 cites·47 claims
- 1188US9306009B2Mix doping of a semi-insulating Group III nitrideCREE INC·Filed 2013·Granted Apr 5, 2016·8 cites·27 claims
- 1288US7858460B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2009·Granted Dec 28, 2010·10 cites·25 claims
- 1387US12324179B2Group III-nitride high-electron mobility transistors with a buried metallic conductive material layer and process for making the sameWOLFSPEED INC·Filed 2021·Granted Jun 3, 2025·1 cites·35 claims
- 1487US5925895ASilicon carbide power MESFET with surface effect supressive layerNORTHROP GRUMMAN CORP·Filed 1997·Granted Jul 20, 1999·75 cites·7 claims
- 1586US7348612B2Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the sameCREE INC·Filed 2004·Granted Mar 25, 2008·40 cites·66 claims
- 1685US7646043B2Transistors having buried p-type layers coupled to the gateCREE INC·Filed 2006·Granted Jan 12, 2010·14 cites·18 claims
- 1784US9679981B2Cascode structures for GaN HEMTsCREE INC·Filed 2013·Granted Jun 13, 2017·7 cites·22 claims
- 1880US12477770B2Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the sameWOLFSPEED INC·Filed 2023·Granted Nov 18, 2025·0 cites·38 claims
- 1979US6902964B2Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structureCREE INC·Filed 2004·Granted Jun 7, 2005·21 cites·22 claims
- 2078US5825076AIntegrated circuit non-etch technique for forming vias in a semiconductor wafer and a semiconductor wafer having vias formed therein using non-etch techniqueNORTHROP GRUMMAN CORP·Filed 1996·Granted Oct 20, 1998·61 cites·20 claims
- 2177US11476359B2Structures for reducing electron concentration and process for reducing electron concentrationWOLFSPEED INC·Filed 2019·Granted Oct 18, 2022·2 cites·20 claims
- 2277US7402844B2Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methodsCREE INC·Filed 2005·Granted Jul 22, 2008·7 cites·23 claims
- 2376US10840334B2Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the sameCREE INC·Filed 2019·Granted Nov 17, 2020·2 cites·21 claims
- 2476US10615273B2Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearityCREE INC·Filed 2017·Granted Apr 7, 2020·3 cites·19 claims
- 2575US10861963B2Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistorsCREE INC·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 2674US6906350B2Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structureCREE INC·Filed 2001·Granted Jun 14, 2005·16 cites·40 claims
- 2773US8421122B2High power gallium nitride field effect transistor switchesSMITH JR THOMAS J·Filed 2011·Granted Apr 16, 2013·5 cites·18 claims
- 2871US9608078B2Semiconductor device with improved field plateCREE INC·Filed 2014·Granted Mar 28, 2017·2 cites·17 claims
- 2971US8203185B2Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methodsSRIRAM SAPTHARISHI·Filed 2005·Granted Jun 19, 2012·5 cites·35 claims
- 3070US10354879B2Depletion mode semiconductor devices including current dependent resistanceCREE INC·Filed 2017·Granted Jul 16, 2019·1 cites·35 claims
- 3170US10192980B2Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the sameCREE INC·Filed 2017·Granted Jan 29, 2019·1 cites·20 claims
- 3269US12142674B2Gallium Nitride high-electron mobility transistors with p-type layers and process for making the sameWOLFSPEED INC·Filed 2022·Granted Nov 12, 2024·0 cites·32 claims
- 3368US11862719B2Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the sameCREE INC·Filed 2020·Granted Jan 2, 2024·0 cites·29 claims
- 3467US11594628B2Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistorsCREE INC·Filed 2020·Granted Feb 28, 2023·0 cites·20 claims
- 3565US5612547ASilicon carbide static induction transistorNORTHROP GRUMMAN CORP·Filed 1995·Granted Mar 18, 1997·26 cites·8 claims
- 3663US12034072B2Semiconductor devices having unit cell transistors with smoothed turn-on behavior and improved linearityMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2021·Granted Jul 9, 2024·0 cites·20 claims
- 3763US9202903B2Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the sameCREE INC·Filed 2013·Granted Dec 1, 2015·1 cites·12 claims
- 3860US5043777APower FETS with improved high voltage performanceWESTINGHOUSE ELECTRIC CORP·Filed 1990·Granted Aug 27, 1991·20 cites·22 claims
- 3959US2024162304A1Field effect transistor including field platesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2024·Application pending·0 cites
- 4058US5821576ASilicon carbide power field effect transistorNORTHROP GRUMMAN CORP·Filed 1996·Granted Oct 13, 1998·18 cites·18 claims
- 4157US8304783B2Schottky diodes including polysilicon having low barrier heights and methods of fabricating the sameSRIRAM SAPTHARISHI·Filed 2009·Granted Nov 6, 2012·1 cites·16 claims
- 4256US12402346B2Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereofCREE INC·Filed 2021·Granted Aug 26, 2025·0 cites·36 claims
- 4356US11244831B2Depletion mode semiconductor devices including current dependent resistanceWOLFSPEED INC·Filed 2019·Granted Feb 8, 2022·0 cites·46 claims
- 4456US10978583B2Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearityCREE INC·Filed 2018·Granted Apr 13, 2021·0 cites·20 claims
- 4556US7943972B2Methods of fabricating transistors having buried P-type layers coupled to the gateCREE INC·Filed 2009·Granted May 17, 2011·1 cites·14 claims
- 4655US12402348B2Field effect transistor with selective channel layer dopingWOLFSPEED INC·Filed 2021·Granted Aug 26, 2025·0 cites·21 claims
- 4755US7737476B2Metal-semiconductor field effect transistors (MESFETs) having self-aligned structuresCREE INC·Filed 2007·Granted Jun 15, 2010·1 cites·36 claims
- 4854US12484244B2Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the sameWOLFSPEED INC·Filed 2021·Granted Nov 25, 2025·0 cites·21 claims
- 4952US9356129B2Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the sameCREE INC·Filed 2015·Granted May 31, 2016·0 cites·20 claims
- 5050US11430882B2Gallium nitride high-electron mobility transistors with p-type layers and process for making the sameCREE FAYETTEVILLE INC·Filed 2016·Granted Aug 30, 2022·0 cites·23 claims
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →