Inventor · disambiguated record
Sanh D. Tang
Also filed as: TANG SANH · TANG SANH D · TANG SANH DANG
306 granted patents·28 pending applications·3,708 citations·filing 1994–2025
99Inventor score
Top patents by PatentIndex Score
334 records- 0199US10607995B2Memory arraysMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 31, 2020·84 cites·34 claims
- 0299US9754953B2Charge storage apparatus and methodsMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 5, 2017·35 cites·19 claims
- 0399US9741737B1Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel materialMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 22, 2017·105 cites·8 claims
- 0499US7384849B2Methods of forming recessed access devices associated with semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 10, 2008·113 cites·20 claims
- 0598US11581324B2Charge storage apparatus and methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 14, 2023·4 cites·11 claims
- 0698US8542513B2Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Sep 24, 2013·46 cites·17 claims
- 0798US8411477B2Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cellsTANG SANH D·Filed 2010·Granted Apr 2, 2013·61 cites·31 claims
- 0898US8207032B2Methods of forming pluralities of vertical transistors, and methods of forming memory arraysFISCHER MARK·Filed 2010·Granted Jun 26, 2012·43 cites·35 claims
- 0998US8158967B2Integrated memory arraysTANG SANH D·Filed 2009·Granted Apr 17, 2012·76 cites·9 claims
- 1098US7285812B2Vertical transistorsMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 23, 2007·240 cites·19 claims
- 1198US7244659B2Integrated circuits and methods of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 17, 2007·81 cites·44 claims
- 1297US10418379B2Integrated structures comprising channel material extending into source materialMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 17, 2019·12 cites·12 claims
- 1397US10090324B2Three dimensional memory and methods of forming the sameMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 2, 2018·12 cites·20 claims
- 1497US9941298B2Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel materialMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 10, 2018·14 cites·8 claims
- 1597US9881924B2Semiconductor memory device having coplanar digit line contacts and storage node contacts in memory array and method for fabricating the sameMICRON TECHNOLOGY INC·Filed 2016·Granted Jan 30, 2018·17 cites·41 claims
- 1697US9773888B2Vertical access devices, semiconductor device structures, and related methodsMICRON TECHNOLOGY INC·Filed 2014·Granted Sep 26, 2017·30 cites·23 claims
- 1797US9754946B1Methods of forming an elevationally extending conductor laterally between a pair of conductive linesMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 5, 2017·30 cites·25 claims
- 1897US9112138B2Methods of forming resistive memory elementsRAMASWAMY D V NIRMAL·Filed 2012·Granted Aug 18, 2015·23 cites·17 claims
- 1997US8803214B2Three dimensional memory and methods of forming the sameTANG SANH D·Filed 2010·Granted Aug 12, 2014·20 cites·21 claims
- 2097US8743589B2Arrays of vertically stacked tiers of non-volatile cross point memory cells and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 3, 2014·24 cites·25 claims
- 2197US8501559B2Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the sameTANG SANH D·Filed 2012·Granted Aug 6, 2013·21 cites·15 claims
- 2297US8427859B2Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cellsSANDHU GURTEJ S·Filed 2010·Granted Apr 23, 2013·29 cites·17 claims
- 2397US8067286B2Methods of forming recessed access devices associated with semiconductor constructionsPAREKH KUNAL R·Filed 2011·Granted Nov 29, 2011·39 cites·14 claims
- 2497US7589995B2One-transistor memory cell with bias gateMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 15, 2009·64 cites·32 claims
- 2597US7521322B2Vertical transistorsMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 21, 2009·76 cites·23 claims
- 2697US7071043B2Methods of forming a field effect transistor having source/drain material over insulative materialMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 4, 2006·114 cites·19 claims
- 2797US6936507B2Method of forming field effect transistorsMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 30, 2005·80 cites·9 claims
- 2897US5977578AMethod of forming dynamic random access memory circuitry and dynamic random access memoryMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 2, 1999·139 cites·5 claims
- 2996US11706909B2Integrated assemblies comprising memory cells and shielding material between the memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 18, 2023·3 cites·24 claims
- 3096US11600535B2Integrated assemblies having conductive material along three of four sides around active regions, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 7, 2023·4 cites·19 claims
- 3196US10825815B2Memory arraysMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 3, 2020·13 cites·27 claims
- 3296US10566332B2Semiconductor devicesMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 18, 2020·11 cites·20 claims
- 3396US9780115B2Three dimensional memory and methods of forming the sameMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 3, 2017·10 cites·20 claims
- 3496US9252188B2Methods of forming memory cellsTANG SANH D·Filed 2011·Granted Feb 2, 2016·14 cites·14 claims
- 3596US8759895B2Semiconductor charge storage apparatus and methodsTANG SANH D·Filed 2011·Granted Jun 24, 2014·18 cites·24 claims
- 3696US7374990B2Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory arrayMICRON TECHNOLOGY INC·Filed 2007·Granted May 20, 2008·38 cites·25 claims
- 3796US7241655B2Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory arrayMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 10, 2007·101 cites·21 claims
- 3896US7122425B2Methods of forming semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 17, 2006·110 cites·47 claims
- 3995US11569266B2Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel materialMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 31, 2023·2 cites·7 claims
- 4095US10872903B2Three dimensional memory and methods of forming the sameMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 22, 2020·5 cites·20 claims
- 4195US10510769B2Three dimensional memory and methods of forming the sameMICRON TECHNOLOGY INC·Filed 2018·Granted Dec 17, 2019·6 cites·20 claims
- 4295US10461149B1Elevationally-elongated conductive structure of integrated circuitry, method of forming an array of capacitors, method of forming DRAM circuitry, and method of forming an elevationally-elongated conductive structure of integrated circuitryMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 29, 2019·10 cites·24 claims
- 4395US9379005B2Three dimensional memory and methods of forming the sameMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 28, 2016·12 cites·20 claims
- 4495US9281402B2Methods of fabricating fin structuresMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 8, 2016·12 cites·20 claims
- 4595US8802520B2Method of forming a field effect transistor having source/drain material over insulative materialMICRON TECHNOLOGY INC·Filed 2013·Granted Aug 12, 2014·12 cites·25 claims
- 4695US8598621B2Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistorTANG SANH D·Filed 2011·Granted Dec 3, 2013·19 cites·17 claims
- 4795US8409948B2Methods of forming transistors, and methods of forming memory arraysFISCHER MARK·Filed 2012·Granted Apr 2, 2013·20 cites·22 claims
- 4895US8288795B2Thyristor based memory cells, devices and systems including the same and methods for forming the sameTANG SANH D·Filed 2010·Granted Oct 16, 2012·13 cites·24 claims
- 4995US7897460B2Methods of forming recessed access devices associated with semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2008·Granted Mar 1, 2011·25 cites·12 claims
- 5095US7745319B2System and method for fabricating a fin field effect transistorMICRON TECHNOLOGY INC·Filed 2006·Granted Jun 29, 2010·24 cites·15 claims
Showing the top 50 of 334 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →