Inventor · disambiguated record
Sang Ho Woo
Also filed as: WOO SANG H · WOO SANG HO
27 granted patents·16 pending applications·482 citations·filing 1993–2017
96Inventor score
Files withHYNIX SEMICONDUCTOR INC9HYUNDAI ELECTRONICS IND9KIM HAI WON8EUGENE TECHNOLOGY CO LTD4KIM YOUNG DAE4
Top patents by PatentIndex Score
43 records- 0193US9425057B2Method and apparatus for manufacturing three-dimensional-structure memory deviceCHO SUNG KIL·Filed 2011·Granted Aug 23, 2016·51 cites·8 claims
- 0291US5441904AMethod for forming a two-layered polysilicon gate electrode in a semiconductor device using grain boundariesHYUNDAI ELECTRONICS IND·Filed 1994·Granted Aug 15, 1995·107 cites·11 claims
- 0385US6962856B2Method for forming device isolation film of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 8, 2005·42 cites·11 claims
- 0485US5639689AMethod for fabricating storage electrode of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1994·Granted Jun 17, 1997·63 cites·10 claims
- 0575US10006121B2Method and apparatus for manufacturing three-dimensional-structure memory deviceEUGENE TECHNOLOGY CO LTD·Filed 2014·Granted Jun 26, 2018·1 cites·9 claims
- 0674US5561310AStorage electrode of DRAM cellHYUNDAI ELECTRONICS IND·Filed 1995·Granted Oct 1, 1996·42 cites·3 claims
- 0767US8828890B2Method for depositing cyclic thin filmKIM HAI WON·Filed 2011·Granted Sep 9, 2014·2 cites·11 claims
- 0866US5532182AMethod for fabricating stacked capacitor of a DRAM cellHYUNDAI ELECTRONICS IND·Filed 1994·Granted Jul 2, 1996·28 cites·7 claims
- 0966US5422311AMethod for manufacturing a conductor layer in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1994·Granted Jun 6, 1995·35 cites·9 claims
- 1063US5405799AMethod of making a storage electrode of DRAM cellHYUNDAI ELECTRONICS IND CO INC·Filed 1993·Granted Apr 11, 1995·32 cites·6 claims
- 1160US8295424B2Data receiving apparatus and methodCHOI WOO JAE·Filed 2009·Granted Oct 23, 2012·3 cites·16 claims
- 1260US6825518B2Capacitor in semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 30, 2004·7 cites·16 claims
- 1357US5518966AMethod for wet etching polysiliconHYUNDAI ELECTRONICS IND·Filed 1994·Granted May 21, 1996·29 cites·11 claims
- 1454US2011294284A1Method for depositing ultra fine grain polysilicon thin filmKIM HAI WON·Filed 2009·Application pending·0 cites
- 1552US2010276393A1Plasma processing apparatus and methodEUGENE TECHNOLOGY CO LTD·Filed 2009·Application pending·0 cites
- 1652US2010319621A1Plasma processing apparatus and plasma processing methodEUGENE TECHNOLOGY CO LTD·Filed 2009·Application pending·0 cites
- 1750US2018105951A1Equipment for manufacturing semiconductorEUGENE TECHNOLOGY CO LTD·Filed 2017·Application pending·0 cites
- 1849US5476805AMethod for fabricating storage electrode of dynamic random access memory cellHYUNDAI ELECTRONICS IND INC·Filed 1993·Granted Dec 19, 1995·15 cites·2 claims
- 1948US2014174357A1Equipment for manufacturing semiconductorKIM YOUNG DAE·Filed 2012·Application pending·0 cites
- 2047US7045445B2Method for fabricating semiconductor device by using PECYCLE-CVD processHYNIX SEMICONDUCTOR INC·Filed 2003·Granted May 16, 2006·1 cites·9 claims
- 2146US7084072B2Method of manufacturing semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Aug 1, 2006·1 cites·6 claims
- 2246US6780709B2Method for forming charge storage nodeHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Aug 24, 2004·1 cites·7 claims
- 2346US6667220B2Method for forming junction electrode of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Dec 23, 2003·2 cites·13 claims
- 2446US2011111582A1Method for depositing ultra fine grain polysilicon thin filmKIM HAI WON·Filed 2009·Application pending·0 cites
- 2544US5926711AMethod of forming an electrode of a semiconductor deviceHYUNDAI ELECTRONICS IND LTD·Filed 1997·Granted Jul 20, 1999·10 cites·6 claims
- 2643US2011136328A1Method for depositing ultra fine grain polysilicon thin filmKIM HAI WON·Filed 2009·Application pending·0 cites
- 2740US9564294B2Plasma treatment apparatus and plasma antennaWOO SANG HO·Filed 2009·Granted Feb 7, 2017·0 cites·2 claims
- 2839US6034778AMethod of measuring surface area variation rate of a polysilicon film having hemispherical grains, and capacitance measuring method and apparatus by the sameHYUNDAI ELECTRONICS IND·Filed 1999·Granted Mar 7, 2000·6 cites·22 claims
- 2939US2014190410A1Equipment for manufacturing semiconductorKIM YOUNG DAE·Filed 2012·Application pending·0 cites
- 3039US2014209024A1Equipment for manufacturing semiconductorKIM YOUNG DAE·Filed 2012·Application pending·0 cites
- 3138US7153739B2Method for manufacturing a capacitor of a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Dec 26, 2006·0 cites·11 claims
- 3238US6913963B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 5, 2005·0 cites·13 claims
- 3338US2014144375A1Equipment for manufacturing semiconductorKIM YOUNG DAE·Filed 2012·Application pending·0 cites
- 3437US9396954B2Method and apparatus for manufacturing three-dimensional-structure memory deviceCHO SUNG KIL·Filed 2011·Granted Jul 19, 2016·0 cites·9 claims
- 3537US8937012B2Production method for semiconductor deviceKIM HAI WON·Filed 2011·Granted Jan 20, 2015·0 cites·7 claims
- 3637US2005006690A1Capacitor of semiconductor device and method for fabricating the sameFiled 2003·Application pending·0 cites
- 3736US2013101752A1Method for depositing cyclic thin filmKIM HAI WON·Filed 2011·Application pending·0 cites
- 3835US2005136575A1Method for forming gate of semiconductor deviceFiled 2004·Application pending·0 cites
- 3935US2013130480A1Method for manufacturing a semiconductor deviceKIM HAI WON·Filed 2011·Application pending·0 cites
- 4034US2012040520A1Ultra-fine-grained polysilicon thin film vapour-deposition methodKIM HAI WON·Filed 2010·Application pending·0 cites
- 4132US2002192906A1Method for forming a capacitor of a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Application pending·0 cites
- 4229US5429961AMethod for manufacturing a thin film transistorHYUNDAI ELECTRONICS IND·Filed 1993·Granted Jul 4, 1995·4 cites·1 claims
- 4326US6200877B1Method of forming a charge storage electrode having a selective hemispherical grains silicon film in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Mar 13, 2001·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →