Production method for semiconductor device

Abstract

Provided is a production method for a semiconductor device comprising a metal silicide layer. According to one embodiment of the present invention, the production method for a semiconductor device comprises the steps of: forming an insulating layer on a substrate, on which a polysilicon pattern has been formed, in such a way that the polysilicon pattern is exposed; forming a silicon seed layer on the exposed polysilicon pattern that has been selectively exposed with respect to the insulating layer; forming a metal layer on the substrate on which the silicon seed layer has been formed; and forming a metal silicide layer by carrying out a heat treatment on the substrate on which the metal layer has been formed.

The invention claimed is: 
     
       1. A production method for a semiconductor device, the method comprising steps of:
 (a) forming a polysilicon pattern on a substrate; 
 (b) forming an insulating material on the substrate to cover the polysilicon pattern, the insulating material being formed as a silicon dioxide film or a silicon nitride film; 
 (c) removing the insulating material covering the polysilicon pattern to form an insulating layer, so that the polysilicon pattern is exposed; 
 (d) pre-treating the substrate with a solution containing hydrogen radical to bond hydrogen atoms onto the insulating layer and the polysilicon pattern that are exposed to the substrate; 
 (e) forming a silicon seed layer only over the polysilicon pattern by supplying one or more source gases selected from a group including SiH4, Si2H6, Si3H8 and Si4H10 to an inside of a chamber in which the substrate is loaded, and by regulating a process condition to replace the hydrogen atoms bonded onto the polysilicon pattern with silicon atoms; 
 (f) forming a metal layer on the silicon seed layer and the insulating layer; and 
 (g) forming a metal silicide layer by carrying out a heat treatment only on the polysilicon pattern, 
 wherein the steps (a), (b), (c), (d), (e), (f) and (g) are performed in this order. 
 
     
     
       2. The method of  claim 1 , wherein the solution containing hydrogen radical is one or more solution selected from a group including HF, diluted hydrogen fluoride (DHF), and buffered oxide etchant (BOE) solution. 
     
     
       3. The method of  claim 1 , wherein the forming of the silicon seed layer comprises maintaining temperature of the substrate at 500° C. to 650° C. 
     
     
       4. The method of  claim 1 , wherein the forming of the silicon seed layer comprises maintaining pressure in the chamber at 5 Torr to 20 Torr. 
     
     
       5. The method of  claim 1 , wherein the metal layer is one or more metals selected from a group including Ti, Co, and Ni. 
     
     
       6. The method of  claim 1 , further comprising, after the forming of the metal silicide layer, removing the metal layer remaining. 
     
     
       7. The method of  claim 1 , wherein the regulating the process condition of step (e) comprises supplying an energy to the inside of the chamber, the energy is greater than a bonding energy of hydrogen and silicon and less than a bonding energy of hydrogen and oxygen or hydrogen and nitrogen.