Inventor · disambiguated record

Sai-Hooi Yeong

Also filed as: YEONG SAI-HOOI

427 granted patents·147 pending applications·819 citations·filing 2007–2025

99Inventor score

Technology areasH10D H10P H10W G11C H10B

Files withTAIWAN SEMICONDUCTOR MFG CO LTD549 APPLIED MATERIALS INC18 TAN DEXTER2 GLOBALFOUNDRIES SG PTE LTD1 TAN DEXTER XUEMING1

Top patents by PatentIndex Score

574 records

0199US11581337B2Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·7 cites·15 claims
0299US11569250B2Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·6 cites·20 claims
0399US11404091B2Memory array word line routingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·17 cites·20 claims
0499US11289603B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·20 claims
0599US11227956B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·11 cites·20 claims
0699US11217494B1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·9 cites·20 claims
0798US11943933B2Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·3 cites·20 claims
0898US11864393B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·2 cites·20 claims
0998US11765892B2Three-dimensional memory device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·3 cites·20 claims
1098US11729986B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·6 cites·20 claims
1198US11729997B23D stackable memory and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·4 cites·20 claims
1298US11637126B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·6 cites·20 claims
1398US11581368B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·3 cites·19 claims
1498US11515332B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·8 cites·20 claims
1598US11417739B2Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 16, 2022·5 cites·20 claims
1698US11362108B2Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·4 cites·20 claims
1798US11335552B2Structure and formation method of semiconductor device with oxide semiconductor channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·6 cites·20 claims
1898US11238904B1Using embedded switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·6 cites·20 claims
1998US11189706B2FinFET structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·5 cites·20 claims
2098US10062784B1Self-aligned gate hard mask and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·31 cites·20 claims
2198US9659930B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·27 cites·20 claims
2297US12069868B2Gated ferroelectric memory cells for memory cell array and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·2 cites·20 claims
2397US11997855B2Back-end-of-line selector for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 28, 2024·3 cites·20 claims
2497US11990529B2Air gap in inner spacers and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·2 cites·20 claims
2597US11956968B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·2 cites·16 claims
2697US11869766B2Seed layer for ferroelectric memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
2797US11862219B2Memory cell and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·3 cites·20 claims
2897US11856743B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
2997US11839080B23D memory with graphite conductive stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 5, 2023·4 cites·20 claims
3097US11791421B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·3 cites·20 claims
3197US11600520B2Air gaps in memory array structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·3 cites·20 claims
3297US11588018B2Semiconductor device structure with nanostructure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·3 cites·20 claims
3397US11587950B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·3 cites·12 claims
3497US11581410B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
3597US11527552B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·5 cites·20 claims
3697US11444069B23D semiconductor package including memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
3797US11417750B2Gate air spacer for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·4 cites·20 claims
3897US11309398B2Semiconductor device and manufacturing method for the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·4 cites·20 claims
3997US11088154B1Ferroelectric device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·4 cites·20 claims
4097US9997631B2Methods for reducing contact resistance in semiconductors manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·31 cites·20 claims
4197US9601497B1Static random access memory and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 21, 2017·28 cites·20 claims
4297US9472620B1Semiconductor device including fin structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·17 cites·20 claims
4397US9275905B1Method of forming semiconductor structure with anti-punch through structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 1, 2016·26 cites·20 claims
4497US8053340B2Method for fabricating semiconductor devices with reduced junction diffusionUNIV SINGAPORE·Filed 2007·Granted Nov 8, 2011·97 cites·26 claims
4596US12058869B2Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·20 claims
4696US12002534B2Memory array word line routingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
4796US11942523B2Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·2 cites·20 claims
4896US11923413B2Semiconductor structure with extended contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
4996US11869971B2Multi-bit memory storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
5096US11862713B2Conformal transfer doping method for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims

Showing the top 50 of 574 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →