Inventor · disambiguated record
Scott W. Crowder
Also filed as: CROWDER SCOTT · CROWDER SCOTT W
17 granted patents·4 pending applications·535 citations·filing 1999–2018
95Inventor score
Files withIBM17
Top patents by PatentIndex Score
21 records- 0196US9652612B2Security within a software-defined infrastructureIBM·Filed 2015·Granted May 16, 2017·15 cites·16 claims
- 0292US10043007B2Security within a software-defined infrastructureIBM·Filed 2017·Granted Aug 7, 2018·6 cites·18 claims
- 0392US9729421B2Outcome-based software-defined infrastructureIBM·Filed 2015·Granted Aug 8, 2017·9 cites·3 claims
- 0492US6372559B1Method for self-aligned vertical double-gate MOSFETIBM·Filed 2000·Granted Apr 16, 2002·121 cites·22 claims
- 0591US9851933B2Capability-based abstraction of software-defined infrastructureIBM·Filed 2015·Granted Dec 26, 2017·9 cites·18 claims
- 0691US6287913B1Double polysilicon process for providing single chip high performance logic and compact embedded memory structureIBM·Filed 1999·Granted Sep 11, 2001·76 cites·34 claims
- 0789US7098676B2Multi-functional structure for enhanced chip manufacturibility and reliability for low k dielectrics semiconductors and a crackstop integrity screen and monitorIBM·Filed 2003·Granted Aug 29, 2006·49 cites·12 claims
- 0889US6261876B1Planar mixed SOI-bulk substrate for microelectronic applicationsIBM·Filed 1999·Granted Jul 17, 2001·93 cites·15 claims
- 0987US10546121B2Security within a software-defined infrastructureIBM·Filed 2018·Granted Jan 28, 2020·3 cites·14 claims
- 1087US6686617B2Semiconductor chip having both compact memory and high performance logicIBM·Filed 2001·Granted Feb 3, 2004·36 cites·8 claims
- 1185US6884734B2Vapor phase etch trim structure with top etch blocking layerIBM·Filed 2001·Granted Apr 26, 2005·38 cites·38 claims
- 1282US6395587B1Fully amorphized source/drain for leaky junctionsIBM·Filed 2000·Granted May 28, 2002·30 cites·9 claims
- 1377US10534911B2Security within a software-defined infrastructureIBM·Filed 2018·Granted Jan 14, 2020·1 cites·20 claims
- 1477US6335262B1Method for fabricating different gate oxide thicknesses within the same chipIBM·Filed 1999·Granted Jan 1, 2002·46 cites·8 claims
- 1570US10216544B2Outcome-based software-defined infrastructureIBM·Filed 2017·Granted Feb 26, 2019·1 cites·19 claims
- 1655US10423457B2Outcome-based software-defined infrastructureIBM·Filed 2017·Granted Sep 24, 2019·0 cites·6 claims
- 1739US2003094660A1Method for fabricating different gate oxide thickness within the same chipFiled 2001·Application pending·0 cites
- 1838US2001034086A1Planar mixed SOI-bulk substrate for microelectronic applicationsFiled 2001·Application pending·0 cites
- 1932US6369434B1Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistorsIBM·Filed 1999·Granted Apr 9, 2002·2 cites·4 claims
- 2030US2003042551A1Partially removable spacer with salicide formationFiled 1999·Application pending·0 cites
- 2130US2001041398A1Partially removable spacer with salicide formationFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →