Inventor · disambiguated record
Scott Sheppard
Also filed as: SHEPPARD SCOTT · SHEPPARD SCOTT T · SHEPPARD SCOTT THOMAS
101 granted patents·29 pending applications·3,931 citations·filing 1997–2025
99Inventor score
Files withCREE INC59WOLFSPEED INC40MACOM TECH SOLUTIONS HOLDINGS INC10SAXLER ADAM WILLIAM5SHEPPARD SCOTT T5
Top patents by PatentIndex Score
130 records- 0199US8049252B2Methods of fabricating transistors including dielectrically-supported gate electrodes and related devicesCREE INC·Filed 2010·Granted Nov 1, 2011·124 cites·21 claims
- 0299US6316793B1Nitride based transistors on semi-insulating silicon carbide substratesCREE INC·Filed 1998·Granted Nov 13, 2001·566 cites·15 claims
- 0398US7906799B2Nitride-based transistors with a protective layer and a low-damage recessCREE INC·Filed 2006·Granted Mar 15, 2011·122 cites·28 claims
- 0498US7901994B2Methods of manufacturing group III nitride semiconductor devices with silicon nitride layersCREE INC·Filed 2005·Granted Mar 8, 2011·91 cites·33 claims
- 0598US7892974B2Method of forming vias in silicon carbide and resulting devices and circuitsCREE INC·Filed 2006·Granted Feb 22, 2011·80 cites·23 claims
- 0698US7875537B2High temperature ion implantation of nitride based HEMTsCREE INC·Filed 2007·Granted Jan 25, 2011·85 cites·24 claims
- 0798US7875910B2Integrated nitride and silicon carbide-based devicesCREE INC·Filed 2006·Granted Jan 25, 2011·123 cites·11 claims
- 0898US7709859B2Cap layers including aluminum nitride for nitride-based transistorsCREE INC·Filed 2007·Granted May 4, 2010·108 cites·18 claims
- 0998US7709269B2Methods of fabricating transistors including dielectrically-supported gate electrodesCREE INC·Filed 2006·Granted May 4, 2010·128 cites·24 claims
- 1098US7550784B2Nitride-based transistors and methods of fabrication thereof using non-etched contact recessesCREE INC·Filed 2005·Granted Jun 23, 2009·75 cites·35 claims
- 1198US7548112B2Switch mode power amplifier using MIS-HEMT with field plate extensionCREE INC·Filed 2005·Granted Jun 16, 2009·184 cites·13 claims
- 1298US7465967B2Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditionsCREE INC·Filed 2005·Granted Dec 16, 2008·94 cites·42 claims
- 1398US7419892B2Semiconductor devices including implanted regions and protective layers and methods of forming the sameCREE INC·Filed 2005·Granted Sep 2, 2008·123 cites·20 claims
- 1498US7125786B2Method of forming vias in silicon carbide and resulting devices and circuitsCREE INC·Filed 2005·Granted Oct 24, 2006·121 cites·19 claims
- 1598US7045404B2Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereofCREE INC·Filed 2004·Granted May 16, 2006·184 cites·52 claims
- 1698US6982204B2Nitride-based transistors and methods of fabrication thereof using non-etched contact recessesCREE INC·Filed 2003·Granted Jan 3, 2006·205 cites·46 claims
- 1798US6583454B2Nitride based transistors on semi-insulating silicon carbide substratesCREE INC·Filed 2001·Granted Jun 24, 2003·171 cites·4 claims
- 1897US7960756B2Transistors including supported gate electrodesCREE INC·Filed 2009·Granted Jun 14, 2011·75 cites·17 claims
- 1997US7875914B2Switch mode power amplifier using mis-HEMT with field plate extensionCREE INC·Filed 2009·Granted Jan 25, 2011·105 cites·20 claims
- 2097US7855401B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2007·Granted Dec 21, 2010·97 cites·31 claims
- 2197US7678628B2Methods of fabricating nitride-based transistors with a cap layer and a recessed gateCREE INC·Filed 2007·Granted Mar 16, 2010·73 cites·16 claims
- 2297US7592211B2Methods of fabricating transistors including supported gate electrodesCREE INC·Filed 2006·Granted Sep 22, 2009·127 cites·13 claims
- 2397US7238560B2Methods of fabricating nitride-based transistors with a cap layer and a recessed gateCREE INC·Filed 2004·Granted Jul 3, 2007·145 cites·24 claims
- 2497US6486502B1Nitride based transistors on semi-insulating silicon carbide substratesCREE INC·Filed 1999·Granted Nov 26, 2002·160 cites·18 claims
- 2596US11533024B2Multi-zone radio frequency transistor amplifiersWOLFSPEED INC·Filed 2020·Granted Dec 20, 2022·5 cites·22 claims
- 2696US10971612B2High electron mobility transistors and power amplifiers including said transistors having improved performance and reliabilityCREE INC·Filed 2019·Granted Apr 6, 2021·21 cites·21 claims
- 2796US9786660B1Transistor with bypassed gate structure fieldCREE INC·Filed 2016·Granted Oct 10, 2017·26 cites·19 claims
- 2895US8563372B2Methods of forming contact structures including alternating metal and silicon layers and related devicesHAGLEITNER HELMUT·Filed 2010·Granted Oct 22, 2013·40 cites·30 claims
- 2995US7456443B2Transistors having buried n-type and p-type regions beneath the source regionCREE INC·Filed 2004·Granted Nov 25, 2008·80 cites·62 claims
- 3094US9847411B2Recessed field plate transistor structuresCREE INC·Filed 2013·Granted Dec 19, 2017·26 cites·33 claims
- 3194US7332795B2Dielectric passivation for semiconductor devicesCREE INC·Filed 2004·Granted Feb 19, 2008·94 cites·49 claims
- 3293US10516043B1Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistorsCREE INC·Filed 2018·Granted Dec 24, 2019·10 cites·23 claims
- 3393US8823057B2Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devicesSHEPPARD SCOTT T·Filed 2006·Granted Sep 2, 2014·23 cites·43 claims
- 3493US7525122B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2005·Granted Apr 28, 2009·22 cites·39 claims
- 3592US9984881B2Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devicesCREE INC·Filed 2014·Granted May 29, 2018·10 cites·24 claims
- 3691US11749726B2Field effect transistor with source-connected field plateWOLFSPEED INC·Filed 2021·Granted Sep 5, 2023·2 cites·33 claims
- 3790US11658234B2Field effect transistor with enhanced reliabilityWOLFSPEED INC·Filed 2021·Granted May 23, 2023·2 cites·24 claims
- 3890US11355600B2High electron mobility transistors having improved drain current drift and/or leakage current performanceCREE INC·Filed 2021·Granted Jun 7, 2022·2 cites·20 claims
- 3989US8035111B2Integrated nitride and silicon carbide-based devicesCREE INC·Filed 2011·Granted Oct 11, 2011·9 cites·17 claims
- 4088US11791389B2Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performanceWOLFSPEED INC·Filed 2021·Granted Oct 17, 2023·2 cites·26 claims
- 4188US10923585B2High electron mobility transistors having improved contact spacing and/or improved contact viasCREE INC·Filed 2019·Granted Feb 16, 2021·6 cites·19 claims
- 4288US7858460B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2009·Granted Dec 28, 2010·10 cites·25 claims
- 4387US9142636B2Methods of fabricating nitride-based transistors with an ETCH stop layerCREE INC·Filed 2013·Granted Sep 22, 2015·9 cites·7 claims
- 4487US7898047B2Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devicesCREE INC·Filed 2008·Granted Mar 1, 2011·13 cites·21 claims
- 4587US6972436B2High voltage, high temperature capacitor and interconnection structuresCREE INC·Filed 2001·Granted Dec 6, 2005·39 cites·37 claims
- 4685US9711633B2Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ionsSHEPPARD SCOTT T·Filed 2008·Granted Jul 18, 2017·15 cites·24 claims
- 4785US9318594B2Semiconductor devices including implanted regions and protective layersSHEPPARD SCOTT T·Filed 2008·Granted Apr 19, 2016·8 cites·26 claims
- 4884US11502178B2Field effect transistor with at least partially recessed field plateWOLFSPEED INC·Filed 2020·Granted Nov 15, 2022·1 cites·45 claims
- 4984US10937873B2High electron mobility transistors having improved drain current drift and/or leakage current performanceCREE INC·Filed 2019·Granted Mar 2, 2021·3 cites·21 claims
- 5084US9679981B2Cascode structures for GaN HEMTsCREE INC·Filed 2013·Granted Jun 13, 2017·7 cites·22 claims
Showing the top 50 of 130 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Scott Sheppard files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →